Stress, absorptance and laser-induced damage threshold properties of 355-nm HR coatings

A number of 355-nm Al2O3/MgF2 high-reflectance (HR) coatings were prepared by electron-beam evaporation. The influences of the number of coating layers and deposition temperature on the 355-nm Al2O3/MgF2 HR coatings were investigated. The stress was measured by viewing the substrate deformation before and after coating deposition using an optical interferometer. The laser-induced damage threshold (LIDT) of the samples was measured by a 355-nm Nd:YAG laser with a pulse width of 8 ns. Transmittance and reflectance of the samples were measured by a Lambda 900 spectrometer. It was found that absorptance was the main reason to result in a low LIDT of 355-nm Al2O3/MgF2 HR coatings. The stress in Al2O3/MgF2 HR coatings played an unimportant role in the LIDT, although MgF2 is known to have high tensile stress.

Study of Al2O3/MgF2 HR coatings at 355 nm

With the present work we tried to study the effective methods to improve the laser-induced damage threshold (LIDT) and reflectance of HR coatings at 355 nm. The work presented in this paper wits part of an ongoing study about vacuum annealing. It was dedicated to study the effects Of Vacuum annealing with different temperature gradients on the structure, optical properties and laser-induced damage threshold (LIDT) of 355nm Al2O3/MgF2HR coatings. A number of samples were prepared by electron beam evaporation using the same deposition process with an optimal deposition temperature of 280 degrees C. After deposition, samples were annealed in the coating chamber for 3 h with different temperature gradients. Morphologies of the samples were observed by Leica-DMRXE. Microscope, Structure of the samples had been characterized by X-ray diffraction (XRD). Transmittance and reflectance of the samples were measured by Lambda 900 Spectrometer, The LIDT of the samples was measured by a 355 nm Nd:YAG laser with a pulse width of 8 ns. It was found that the temperature gradient of vacuum annealing had significant effects on the morphology, structure, absorption, and LIDT of the samples, (c) 2005 Elsevier Ltd. All rights reserved.

沉积温度对电子束蒸发HfO2薄膜残余应力的影响

采用电子束蒸发沉积方法在BK7玻璃基底和熔融石英基底上沉积了HfO2薄膜，研究了不同沉积温度下的应力变化规律。利用ZYGO干涉仪测量了基片镀膜前后曲率半径的变化，计算了薄膜应力。结果发现在所考察的实验条件下HfO2薄膜的残余应力均为张应力，应力值随沉积温度的升高先增大后减小。两种基底上薄膜的残余应力的主要产生机制不同。对于BK7玻璃基底HfO2薄膜的残余应力起决定作用的是内应力，熔融石英基底上HfO2薄膜的残余应力在较低沉积温度下制备的薄膜起决定作用的是热应力，在沉积温度进一步升高后内应力开始起决定作用。

沉积温度对HfO2薄膜残余应力的影响

用电子柬蒸发方法制备了HfO2薄膜，根据镀膜前后基片曲率半径的变化，用Stoney公式计算了薄膜应力。讨论了沉积温度对薄膜残余应力的影响。结果发现，HfO2薄膜的残余应力均为张应力，应力值随沉积温度的升高先增大后减小，在280℃左右出现极大值。对样品进行了XRD测试，从微观结构上对实验结果进行了分析，发现微结构演变引起的内应力变化是引起薄膜残余应力改变的主要因素，HfO2薄膜在所选沉积温度60～350℃内出现了晶态转变，堆积密度随温度升高而增大。

沉积温度对LaF3薄膜性能的影响

abstract {LaF₃ single-layer coatings were prepared by thermal boat evaporation at the deposition temperatures of 189, 255, 277 and 321°C respectively. The crystal structures of the coatings were characterized by X-ray diffraction (XRD). A spectrophotometer was employed to measure its transmittance. Moreover, refractive index, extinction coefficient and cut-off wavelength were obtained from the measured transmittance spectral curve. The residual stress was evaluated by the Stoney's equation and optical interferometer. Laser induce damage threshold (LIDT) was performed by a tripled Nd:YAG laser system. The results show that the crystallization status becomes better with the deposition temperature increasing. Correspondingly, the grain size also gets larger. Meanwhile, the coatings become more compact and the refractive index increases. However, the absorption of coatings seriously rises and the cut-off wavelength drifts to the long wave. In addition, the residual stress also increases and the intrinsic stress plays a determinant role in the coating. The LIDT of the coating also enhances at high temperature.}

沉积温度对热舟蒸发MgF2薄膜性能的影响

采用热舟蒸发方法沉积了氟化镁（MgF2）材料的单层膜，沉积温度从200℃上升到350℃，间隔为50℃。测量了样品的透射率和反射率光谱曲线，进行了表面粗糙度的标定，并在此基础上进行了光学损耗及散射损耗的计算。同时对355nm波长处的激光诱导损伤阈值进行了测量。结果表明：随着沉积温度的升高，光学损耗增加;在短波长范围散射损耗在光学损耗中所占比例很小，光学损耗的增加主要由吸收损耗引起；在355nm波长处的损伤阈值变化与吸收损耗的变化趋势相关，损伤机制主要是吸收起主导作用。样品的微缺陷密度也是影响损伤阈值的一个重要因素，损伤阈值随缺陷密度的增加而降低。

沉积温度对氧化钇稳定氧化锆薄膜残余应力的影响

采用自制掺摩尔分数12%的Y2O3的ZrO2混合颗粒料为原料,在不同的沉积温度下用电子束蒸发方法沉积氧化钇稳定氧化锆(YSZ)薄膜样品。利用ZYGOMarkⅢ-GPI数字波面干涉仪对氧化钇稳定氧化锆薄膜的残余应力进行了研究,讨论了沉积温度对残余应力的影响。实验结果表明:随沉积温度升高,氧化钇稳定氧化锆薄膜中残余应力状态由张应力变为压应力,且压应力值随着沉积温度升高而增大;用X射线衍射仪表征了不同沉积温度下氧化钇稳定氧化锆薄膜的微观结构,探讨了薄膜微观结构与其应力的对应关系,并对比了纯ZrO2薄膜表现出的应力状态。

Bonding regimes of nitrogen in amorphous carbon

Nitrogen can have numerous effects on diamond-like carbon: it can dope, it can form the hypothetical superhard compound C3N4, or it can create fullerene-like bonding structures. We studied amorphous carbon nitrogen films deposited by a filtered cathodic vacuum arc as a function of nitrogen content, ion energy and deposition temperature. The incorporation of nitrogen from 10-2 to 10 at% was measured by secondary ion mass spectrometry and elastic recoil detection analysis and was found to vary slightly sublinearly with N2 partial pressure during deposition. In the doping regime from 0 to about 0.4% N, the conductivity changes while the sp3 content and optical gap remain constant. From 0.4 to approximately 10% N, existing sp2 sites condense into clusters and reduce the band gap. Nitrogen contents over 10% change the bonding from mainly sp3 to mainly sp2. Ion energies between 20 and 250 eV do not greatly modify this behaviour. Deposition at higher temperatures causes a sudden loss of sp3 bonding above about 150 °C. Raman spectroscopy and optical gap data show that existing sp2 sites begin to cluster below this temperature, and the clustering continues above this temperature. This transition is found to vary only weakly with nitrogen addition, for N contents below 10%.

Controlled growth of aligned ZnO nanowires

The growth of vertically aligned zinc oxide nanowires (ZnO NW) using a simple vapor deposition method system is reported. The growth properties are studied as a function of the Au catalyst layer thickness, pressure, deposition temperature, and oxygen ratio. It was found that the diameter and density of the nanowires is controlled mostly by the growth temperature and pressure. The alignment of the nanowires depends on a combination of three factors including the pressure, temperature and the oxygen ratio. Our results implicates the growth occurs by a vapor liquid solid (VLS) process [1].

Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Getting high-efficiency photoluminescence from Si nanocrystals in SiO2 matrix

Silicon nanocrystals in SiO2 matrix are fabricated by plasma enhanced chemical vapor deposition followed by thermal annealing. The structure and photoluminescence (PL) of the resulting films is investigated as a function of deposition temperature. Drastic improvement of PL efficiency up to 12% is achieved when the deposition temperature is reduced from 250 degreesC to room temperature. Low-temperature deposition is found to result in a high quality final structure of the films in which the silicon nanocrystals are nearly strain-free, and the Si/SiO2 interface sharp. The demonstration of the superior structural and optical properties of the films represents an important step towards the development of silicon-based light emitters. (C) 2002 American Institute of Physics.

Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates

In this letter, we investigated the effect of the buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(0 0 1) substrate. The reflection high-energy electron diffraction (RHEED) pattern of the low-temperature GaN buffer layers shows that both the deposition temperature and time are important in obtaining a smooth surface. Four-circle X-ray double-crystal diffraction (XRDCD) reciprocal space mapping was used to study the hexagonal phase inclusions in the cubic GaN (c-GaN) films grown on the buffer layers. The calculation of the volume contents of the hexagonal phase shows that higher temperature and longer time deposition of the buffer layer is not preferable for growing pure c-GaN film. Under optimized condition, 47 meV FWHM of near band gap emission of the c-GaN film was achieved. (C) 2000 Elsevier Science B.V. All rights reserved.

EFFECT OF TOTAL HYDROGEN CONTENT IN SILICON-NITRIDE SENSITIVE FILM ON PERFORMANCE OF ISFET

Quantitative determinations of the hydrogen content and its profile in silicon nitride sensitive films by the method of resonant nuclear reaction have been carried out. At a deposition temperature of 825-degrees-C, hydrogen exists in an LPCVD silicon nitride sensitive film and the hydrogen content on its surface is in the range (8-16) x 10(21) cm-3, depending on the different deposition processes used. This hydrogen content is larger than the (2-3) x 10(21) cm-3 in its interior part, which is homogeneous. Meanwhile, we observe separate peaks for the chemical bonding configurations of Si-H and N-H bonds, indicated by the infrared absorption bands Si-O (1106 cm-1), N-H (1200 cm-1), Si-H-3 (2258 cm-1) and N-H-2 (3349 cm-1), respectively. The worse linear range of the ISFET is caused by the presence of oxygen on the surface of the silicon nitride sensitive film. The existence of chemical bonding configurations of Si-H, N-H and N-Si on its surfaces is favourable for its pH response.

Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells

The semiconductor alloy indium gallium nitride (InxGa1-xN) offers substantial potential in the development of high-efficiency multi-junction photovoltaic devices due to its wide range of direct band gaps, strong absorption and other optoelectronic properties. This work uses a variety of characterization techniques to examine the properties of InxGa1-xN thin films deposited in a range of compositions by a novel plasma-enhanced evaporation deposition system. Due to the high vapour pressure and low dissociation temperature of indium, the indium incorporation and, ultimately, control of the InxGa1-xN composition was found to be influenced to a greater degree by deposition temperature than variations in the In:Ga source rates in the investigated region of deposition condition space. Under specific deposition conditions, crystalline films were grown in an advantageous nano-columnar microstructure with deposition temperature influencing column size and density. The InxGa1-xN films were determined to have very strong absorption coefficients with band gaps indirectly related to indium content. However, the films also suffer from compositional inhomogeneity and In-related defect complexes with strong phonon coupling that dominates the emission mechanism. This, in addition to the presence of metal impurities, harms the alloy’s electronic properties as no significant photoresponse was observed. This research has demonstrated the material properties that make the InxGa1-xN alloy attractive for multi-junction solar cells and the benefits/drawbacks of the plasma-enhanced evaporation deposition system. Future work is needed to overcome significant challenges relating to crystalline quality, compositional homogeneity and the optoelectronic properties of In-rich InxGa1-xN films in order to develop high-performance photovoltaic devices.

Method for the in situ preparation of a single layer of zeolite Beta crystals on a molybdenum substrate for microreactor applications

A method for the hydrothermal synthesis of a single layer of zeolite Beta crystals on a molybdenum substrate for microreactor applications has been developed. Before the hydrothermal synthesis, the surface of the substrate was modified by an etching procedure that increases the roughness at the nanoscale level without completely eliminating the surface lay structure. Then, thin films of Al2O3 (170 nm) and TiO2 (50 nm) were successively deposited by atomic layer deposition (ALD) on the substrate. The internal Al2O3 film protects the Mo substrate from oxidation up to 550 degrees C in an oxidative environment. The high wettability of the external TiO2 film after UV irradiation increases zeolite nucleation on its surface. The role of the metal precursor (TiCl4 vs TiI4), deposition temperature (300 vs 500 degrees C), and film thickness (50 vs 100 nm) was investigated to obtain titania films with the slowest decay in the superhydrophilic behavior after UV irradiation. Zeolite Beta coatings with a Si/Al ratio of 23 were grown at 140 degrees C for 48 It. After ion exchange with a 10(-4) M cobalt acetate solution, the activity of the coatings was determined in the ammoxidation of ethylene to acetonitrile in a microstructured reactor. A maximum reaction rate of 220 mu mol C2H3N g(-1) s(-1) was obtained at 500 degrees C, with 42% carbon selectivity to acetonitrile. (C) 2007 Elsevier Inc. All rights reserved.