沉积温度对氧化钇稳定氧化锆薄膜残余应力的影响

采用自制掺摩尔分数12%的Y2O3的ZrO2混合颗粒料为原料,在不同的沉积温度下用电子束蒸发方法沉积氧化钇稳定氧化锆(YSZ)薄膜样品。利用ZYGOMarkⅢ-GPI数字波面干涉仪对氧化钇稳定氧化锆薄膜的残余应力进行了研究,讨论了沉积温度对残余应力的影响。实验结果表明:随沉积温度升高,氧化钇稳定氧化锆薄膜中残余应力状态由张应力变为压应力,且压应力值随着沉积温度升高而增大;用X射线衍射仪表征了不同沉积温度下氧化钇稳定氧化锆薄膜的微观结构,探讨了薄膜微观结构与其应力的对应关系,并对比了纯ZrO2薄膜表现出的应力状态。

Yttria-stabilized zirconia (YSZ) films have been prepared by electron beam evaporation at different deposition temperatures with the starting material made of 12% (mole fraction) Y<inf>2</inf>O<inf>3</inf> (99.99%) mixed with ZrO<inf>2</inf> (99.99%) powder. The residual stress in yttrial-stabilized zirconia films was measured ZYGO Mark III-GPI digital wavefront interferometer. The influence of deposition temperatures on residual stress was studied. The results show that residual stress in yttrial-stabilized zirconia films changes from tensile to compressive with the increase of deposition temperature and the value of the compressive stress increases with the increases of deposition temperature. At the same time, the microstructure of the yttrial-stabilized zirconia films was characterized by X-ray diffractometer. The relationship between residual stress and the microstructure was discussed. Also the residual stress was compared with that in pure ZrO<inf>2</inf> films.