Identification of Determinants of Glucose-Dependent Insulinotropic Polypeptide Receptor That Interact with N-Terminal Biologically Active Region of the Natural Ligand

Glucose-dependent insulinotropic polypeptide receptor (GIPR), a member of family B of the G-protein coupled receptors, is a potential therapeutic target for which discovery of nonpeptide ligands is highly desirable. Structure-activity relationship studies indicated that the N-terminal part of glucose-dependent insulinotropic polypeptide (GIP) is crucial for biological activity. Here, we aimed at identification of residues in the GIPR involved in functional interaction with N-terminal moiety of GIP. A homology model of the transmembrane core of GIPR was constructed, whereas a three-dimensional model of the complex formed between GIP and the N-terminal extracellular domain of GIPR was taken from the crystal structure. The latter complex was docked to the transmembrane domains of GIPR, allowing in silico identification of putative residues of the agonist binding/activation site. All mutants were expressed at the surface of human embryonic kidney 293 cells as indicated by flow cytometry and confocal microscopy analysis of fluorescent GIP binding. Mutation of residues Arg183, Arg190, Arg300, and Phe357 caused shifts of 76-, 71-, 42-, and 16-fold in the potency to induce cAMP formation, respectively. Further characterization of these mutants, including tests with alanine-substituted GIP analogs, were in agreement with interaction of Glu3 in GIP with Arg183 in GIPR. Furthermore, they strongly supported a binding mode of GIP to GIPR in which the N-terminal moiety of GIP was sited within transmembrane helices (TMH) 2, 3, 5, and 6 with biologically crucial Tyr1 interacting with Gln224 (TMH3), Arg300 (TMH5), and Phe357 (TMH6). These data represent an important step toward understanding activation of GIPR by GIP, which should facilitate the rational design of therapeutic agents.

Selective High Impedance Surface Active Region Loading of Archimedean Spiral Antenna

We show that a significant increase in the gain and front-to-back ratio is obtained when different high impedance surface (HIS) sections are placed below the active regions of an Archimedean spiral antenna. The principle of operation is demonstrated at 3, 6, and 9 GHz for an antenna design that employs a ground plane composed of two dissimilar HISs. The unit cells of the HISs are collocated and resonant at the same frequency as the 3- and 6-GHz active regions of the wideband spiral. It is shown that the former HIS must also be designed to resonate at 9 GHz to avoid the generation of a boresight null that occurs because the structure is physically large enough to support higher-order modes. The improvement that is obtained at each of the three frequencies investigated is shown by comparing the predicted and measured radiation patterns for the free space and HIS-backed antenna.

Failed filament eruption inside a coronal mass ejection in active region 11121

Aims. We study the formation and evolution of a failed filament eruption observed in NOAA active region 11121 near the southeast
limb on November 6, 2010.
Methods. We used a time series of SDO/AIA 304, 171, 131, 193, 335, and 94 Å images, SDO/HMI magnetograms, as well as ROSA
and ISOON Hα images to study the erupting active region.
Results. We identify coronal loop arcades associated with a quadrupolar magnetic configuration, and show that the expansion and
cancellation of the central loop arcade system over the filament is followed by the eruption of the filament. The erupting filament
reveals a clear helical twist and develops the same sign of writhe in the form of inverse γ-shape.
Conclusions. The observations support the “magnetic breakout” process in which the eruption is triggered by quadrupolar reconnection
in the corona. We propose that the formation mechanism of the inverse γ-shape flux rope is the magnetohydrodynamic helical
kink instability. The eruption has failed because of the large-scale, closed, overlying magnetic loop arcade that encloses the active
region

Dynamic properties of bright points in an active region

Context. Bright points (BPs) are small-scale, magnetic features ubiquitous across the solar surface. Previously, we have observed and noted their properties for quiet Sun regions. Here, we determine the dynamic properties of BPs using simultaneous quiet Sun and active region data.

Aims. The aim of this paper is to compare the properties of BPs in both active and quiet Sun regions and to determine any difference in the dynamics and general properties of BPs as a result of the varying magnetic activity within these two regions.

Methods. High spatial and temporal resolution G-band observations of active region AR11372 were obtained with the Rapid Oscillations in the Solar Atmosphere instrument at the Dunn Solar Telescope. Three subfields of varying polarity and magnetic flux density were selected with the aid of magnetograms obtained from the Helioseismic and Magnetic Imager on board the Solar Dynamics Observatory. Bright points within these subfields were subsequently tracked and analysed.

Results. It is found that BPs within active regions display attenuated velocity distributions with an average horizontal velocity of ~0.6 km s-1, compared to the quiet region which had an average velocity of 0.9 km s-1. Active region BPs are also ~21% larger than quiet region BPs and have longer average lifetimes (~132 s) than their quiet region counterparts (88 s). No preferential flow directions are observed within the active region subfields. The diffusion index (γ) is estimated at ~1.2 for the three regions.

Conclusions. We confirm that the dynamic properties of BPs arise predominately from convective motions. The presence of stronger field strengths within active regions is the likely reason behind the varying properties observed. We believe that larger amounts of magnetic flux will attenuate BP velocities by a combination of restricting motion within the intergranular lanes and by increasing the number of stagnation points produced by inhibited convection. Larger BPs are found in regions of higher magnetic flux density and we believe that lifetimes increase in active regions as the magnetic flux stabilises the BPs.

A comparison of theoretical Mg VI emission line strengths with active-region observations from SERTS

R-matrix calculations of electron impact excitation rates in N-like Mg VI are used to derive theoretical electron-density-sensitive emission line ratios involving 2s²2p³ - 2s2p⁴ transitions in the 269-403 Å wavelength range. A comparison of these with observations of a solar active region, obtained during the 1989 flight of the Solar EUV Rocket Telescope and Spectrograph (SERTS), reveals good agreement between theory and observation for the 2s²2p^{3 4}S - 2s2p ^{4 4}p transitions at 399.28, 400.67, and 403.30 Å, and the 2s²2p^{3 2}p - 2s2p^{4 2}D lines at 387.77 and 387.97 Å. However, intensities for the other lines attributed to Mg VI in this spectrum by various authors do not match the present theoretical predictions. We argue that these discrepancies are not due to errors in the adopted atomic data, as previously suggested, but rather to observational uncertainties or mis-identifications. Some of the features previously identified as Mg VI lines in the SERTS spectrum, such as 291.36 and 293.15 Å, are judged to be noise, while others (including 349.16 Å) appear to be blended.

GaN-based violet laser diodes grown on free-standing GaN substrate

National Natural Science Foundation of China 60506001 60776047 60476021 60576003 60836003；National Basic Research Programme of China 2007CB936700

Polarisation dependent all-optical nonlinearity far from the bandedge in active GaAs/AlGaAs quantum well waveguides

This paper describes a measurement on a GaAs quantum well waveguide with a high built in field across the quantum wells at a wavelength far from the bandedge. The device structure used for the measurement has been fabricated at STC Technology Ltd and is that of a standard laser ridge structure. In fabrication double heterostructure layers are grown on a [001] n + GaAs substrate, with the active region containing two intrinsic GaAs quantum wells of 10nm thickness separated by 10nm. A 4μm wide ridge is etched to provide transverse optical guiding. The experimental work has involved the use of 1.06μm wavelength light from a Q-switched Nd:YAG laser. Any induced change in refractive index is determined by measuring the change in transmission of the quantum well waveguide Fabry-Perot cavity. The waveguide is placed on a Peltier temperature controller to allow thermal tuning.

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples. © 2013 SPIE.

High-Temperature Continuous-Wave Single-Mode Operation of 1.3 mu m p-Doped InAs-GaAs Quantum-Dot VCSELs

In this letter, we have demonstrated continuous-wave single-mode operation of 1.3-mu m InAs-GaAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) with p-type modulation-doped QD active region from 20 degrees C to 60 degrees C. The highest output power of 0.435mW and lowest threshold current of 1.2 mA under single-mode operation are achieved. The temperature-dependent output characteristics of QD-VCSELs are investigated. Single-mode operation with a sidemode suppression ratio of 34 dB is observed at room temperature. The critical size of oxide aperture for single-mode operation is discussed.

High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

We report the molecular beam epitaxy growth of 1.3 mu m InAs/GaAs quantum-dot (QD) lasers with high characteristic temperature T-0. The active region of the lasers consists of five-layer InAs QDs with p-type modulation doping. Devices with a stripe width of 4 mu m and a cavity length of 1200 mu m are fabricated and tested in the pulsed regime under different temperatures. It is found that T-0 of the QD lasers is as high as 532K in the temperature range from 10 degrees C to 60 degrees C. In addition, the aging test for the lasers under continuous wave operation at 100 degrees C for 72 h shows almost no degradation, indicating the high crystal quality of the devices.

Influence of a tilted cavity on quantum-dot optoelectronic active devices

Quantum-dot laser diodes (QD-LDs) with a Fabry-Perot cavity and quantum-dot semiconductor optical amplifiers (QD-SOAs) with 7° tilted cavity were fabricated. The influence of a tilted cavity on optoelectronic active devices was also investigated. For the QD-LD, high performance was observed at room temperature. The threshold current was below 30 mA and the slope efficiency was 0.36 W/A. In contrast, the threshold current of the QD-SOA approached 1000 mA, which indicated that low facet reflectivity was obtained due to the tilted cavity design.A much more inverted carrier population was found in the QD-SOA active region at high operating current, thus offering a large optical gain and preserving the advantages of quantum dots in optical amplification and processing applications. Due to the inhomogeneity and excited state transition of quantum dots, the full width at half maximum of the electroluminescence spectrum of the QD-SOA was 81.6 nm at the injection current of 120 mA, which was ideal for broad bandwidth application in a wavelength division multiplexing system. In addition, there was more than one lasing peak in the lasing spectra of both devices and the separation of these peak positions was 6-8 nm,which is approximately equal to the homogeneous broadening of quantum dots.

Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power

Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (QDs) embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-mW output power at ground state of 1.33-1.35 microns for a 20-micron ridge-waveguide laser without facet coating is achieved. By optimizing the molecular beam epitaxy (MBE) growth conditions, the QD density per layer is raised to 4*10^(10) cm^(-2). The laser keeps lasing at ground state until the temperature reaches 65 Celsius degree.

Reconstruction des structures magnéto-convectives solaires sous une région active, par l’utilisation conjointe d’un modèle de convection anélastique et d’une méthode d’assimilation de données.

L’utilisation d’une méthode d’assimilation de données, associée à un modèle de convection anélastique, nous permet la reconstruction des structures physiques d’une partie de la zone convective située en dessous d’une région solaire active. Les résultats obtenus nous informent sur les processus d’émergence des tubes de champ magnétique au travers de la zone convective ainsi que sur les mécanismes de formation des régions actives. Les données solaires utilisées proviennent de l’instrument MDI à bord de l’observatoire spatial SOHO et concernent principalement la région active AR9077 lors de l’ ́évènement du “jour de la Bastille”, le 14 juillet 2000. Cet évènement a conduit à l’avènement d’une éruption solaire, suivie par une importante éjection de masse coronale. Les données assimilées (magnétogrammes, cartes de températures et de vitesses verticales) couvrent une surface de 175 méga-mètres de coté acquises au niveau photosphérique. La méthode d’assimilation de données employée est le “coup de coude direct et rétrograde”, une méthode de relaxation Newtonienne similaire à la méthode “quasi-linéaire inverse 3D”. Elle présente l’originalité de ne pas nécessiter le calcul des équations adjointes au modèle physique. Aussi, la simplicité de la méthode est un avantage numérique conséquent. Notre étude montre au travers d’un test simple l’applicabilité de cette méthode à un modèle de convection utilisé dans le cadre de l’approximation anélastique. Nous montrons ainsi l’efficacité de cette méthode et révélons son potentiel pour l’assimilation de données solaires. Afin d’assurer l’unicité mathématique de la solution obtenue nous imposons une régularisation dans tout le domaine simulé. Nous montrons enfin que l’intérêt de la méthode employée ne se limite pas à la reconstruction des structures convectives, mais qu’elle permet également l’interpolation optimale des magnétogrammes photosphériques, voir même la prédiction de leur évolution temporelle.

High-Speed Semiconductor Lasers based on Low-Dimensional Active Materials for Optical Telecommunication

The scope of this work is the fundamental growth, tailoring and characterization of self-organized indium arsenide quantum dots (QDs) and their exploitation as active region for diode lasers emitting in the 1.55 µm range. This wavelength regime is especially interesting for long-haul telecommunications as optical fibers made from silica glass have the lowest optical absorption. Molecular Beam Epitaxy is utilized as fabrication technique for the quantum dots and laser structures. The results presented in this thesis depict the first experimental work for which this reactor was used at the University of Kassel. Most research in the field of self-organized quantum dots has been conducted in the InAs/GaAs material system. It can be seen as the model system of self-organized quantum dots, but is not suitable for the targeted emission wavelength. Light emission from this system at 1.55 µm is hard to accomplish. To stay as close as possible to existing processing technology, the In(AlGa)As/InP (100) material system is deployed. Depending on the epitaxial growth technique and growth parameters this system has the drawback of producing a wide range of nano species besides quantum dots. Best known are the elongated quantum dashes (QDash). Such structures are preferentially formed, if InAs is deposited on InP. This is related to the low lattice-mismatch of 3.2 %, which is less than half of the value in the InAs/GaAs system. The task of creating round-shaped and uniform QDs is rendered more complex considering exchange effects of arsenic and phosphorus as well as anisotropic effects on the surface that do not need to be dealt with in the InAs/GaAs case. While QDash structures haven been studied fundamentally as well as in laser structures, they do not represent the theoretical ideal case of a zero-dimensional material. Creating round-shaped quantum dots on the InP(100) substrate remains a challenging task. Details of the self-organization process are still unknown and the formation of the QDs is not fully understood yet. In the course of the experimental work a novel growth concept was discovered and analyzed that eases the fabrication of QDs. It is based on different crystal growth and ad-atom diffusion processes under supply of different modifications of the arsenic atmosphere in the MBE reactor. The reactor is equipped with special valved cracking effusion cells for arsenic and phosphorus. It represents an all-solid source configuration that does not rely on toxic gas supply. The cracking effusion cell are able to create different species of arsenic and phosphorus. This constitutes the basis of the growth concept. With this method round-shaped QD ensembles with superior optical properties and record-low photoluminescence linewidth were achieved. By systematically varying the growth parameters and working out a detailed analysis of the experimental data a range of parameter values, for which the formation of QDs is favored, was found. A qualitative explanation of the formation characteristics based on the surface migration of In ad-atoms is developed. Such tailored QDs are finally implemented as active region in a self-designed diode laser structure. A basic characterization of the static and temperature-dependent properties was carried out. The QD lasers exceed a reference quantum well laser in terms of inversion conditions and temperature-dependent characteristics. Pulsed output powers of several hundred milli watt were measured at room temperature. In particular, the lasers feature a high modal gain that even allowed cw-emission at room temperature of a processed ridge wave guide device as short as 340 µm with output powers of 17 mW. Modulation experiments performed at the Israel Institute of Technology (Technion) showed a complex behavior of the QDs in the laser cavity. Despite the fact that the laser structure is not fully optimized for a high-speed device, data transmission capabilities of 15 Gb/s combined with low noise were achieved. To the best of the author`s knowledge, this renders the lasers the fastest QD devices operating at 1.55 µm. The thesis starts with an introductory chapter that pronounces the advantages of optical fiber communication in general. Chapter 2 will introduce the fundamental knowledge that is necessary to understand the importance of the active region`s dimensions for the performance of a diode laser. The novel growth concept and its experimental analysis are presented in chapter 3. Chapter 4 finally contains the work on diode lasers.