The anions [(ZrOH(CO3)3)2]6− and [(ZrOH(C2O4)3)2]6−: single crystal X-ray diffraction studies of the complexes guanidinium zirconium carbonate [(C(NH2)3)3ZrOH(CO3)3·H2O]2 and sodium zirconium oxalate Na6(ZrOH(C2O4)3)2·7H2O

The complex [(C(NH2)3)3ZrOH(CO3)3·H2O]2 (A) has been shown by means of a single crystal X-ray diffraction study to contain [C(NH2)3]+ cations and dimeric anions of formulation [(ZrOH(CO3)3)2]6−. The anion is centrosymmetric with each metal being bonded to two bridging OH groups and three chelating CO2−3 ions. The Zr atoms are thus eight coordinate with a dodecahedral environments. The ZrO distances formed by the bridgng OH groups are shorter than those formed through zirconiu carbonate interactions. The non-bonded Zr…Zr distance is 3.47(2) Å. An infrared spectroscopic investigation of A provides data which support the findings of the crystallographic study. Likewise the complex Na6(ZrOH(CO2O4)3)2·7H2O (B) contains the anion [(ZrOH(C2O4)3)2]6−. This anion is structurally related to the anion in A as each Zr atom has an eight-coordinate dodecahedral environment being bonded to two bridging OH groups and three chelating oxalate ligands, but has no imposed crysallographic symmetry. The Zr…Zr non-bonded distance is 3.50(1) Å. The OZrO bridge angles are 69.7(4)° and A and 67.4(3)° in B.

Spectroscopic features of erbium-doped CaM2O6 (M = Nb, Ta) single crystal fibers grown by the laser-heated pedestal growth technique

Erbium-doped single crystal fibers, with low phonon energy and fairly high absorption and emission cross sections are interesting laser active media, for compact, near-infrared and/or upconversion lasers. In this work, high optical quality Er3+-doped CaNb2O6 and CaTa2O6 single crystal fibers were successfully grown by the versatile laser-heated pedestal growth technique, and characterized from the structural and spectroscopic points of view. The results indicate that these crystal fiber compositions, which had not been explored so far, offer potential applications, not only as laser active media, but also in other optical devices. (c) 2007 Elsevier B.V. All rights reserved.

Voltammetric characterization of stepped platinum single crystal surfaces vicinal to the (110) pole

Platinum stepped surfaces vicinal to the (1 1 0) crystallographic pole have been investigated voltammetrically in 0.1 M HClO(4) and 0.1 M H(2)SO(4) solutions. Changes in the voltammetric profile with the step density suggest the existence of two types of surface sites, that has been ascribed to linear and bidimensional domains. This result indicates the existence of important restructuring processes that separate the real surface distribution from the nominal one. The electronic properties of the surfaces have been characterized with the CO charge displacement method and the potential of zero total charge has been calculated as a function of the step density. (c) 2009 Elsevier B.V. All rights reserved.

Thermally activated exchange narrowing of the Gd3+ ESR fine structure in a single crystal of Ce1-xGdxFe4P12 (x approximate to 0.001) skutterudite

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Laüe back-reflection method for crystallographic orientation of a martensitic Cu-Zn-Al single crystal of the monoclinic system

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Conductivity mechanism analysis at high temperature in bismuth titanate: A single crystal with sillenite-type structure

Conductivity behavior of the Bi12TiO20 single crystal was investigated by the electric modulus spectroscopy, which was carried out in the frequency range from 5 Hz to 13 MHz and at temperatures higher than 400 degrees C. The resistance curve exhibits a set of properties correlated to a negative temperature coefficient thermistor. In the temperature range investigated, the characteristic parameter (,8) of the thermistor is equal to 4834 degrees C. Temperature coefficients of the resistance (a) were derived being equal to -3.02 x 10(-2) degrees C-1 at 400 degrees C and equal to -9.86 x 10(-3) degrees C-1 at 700 degrees C. The nature of the electric relaxation phenomenon and magnitude dc conductivity are approached. (c) 2005 American Institute of Physics.

Structural, microstructural, and transport properties of highly oriented LaNiO3 thin films deposited on SrTiO3(100) single crystal

Electrical conductive textured LaNiO3/SrTiO3 (100) thin films were successfully produced by the polymeric precursor method. A comparison between features of these films of LaNiO3 (LNO) when heat treated in a conventional furnace (CF) and in a domestic microwave (MW) oven is presented. The x-ray diffraction data indicated good crystallinity and a structural orientation along the (h00) direction for both films. The surface images obtained by atomic force microscopy revealed similar roughness values, whereas films LNO-MW present slightly smaller average grain size (similar to 80 nm) than those observed for LNO-CF (60-150 nm). These grain size values were in good agreement with those evaluated from the x-ray data. The transport properties have been studied by temperature dependence of the electrical resistivity rho(T) which revealed for both films a metallic behavior in the entire temperature range studied. The behavior of rho(T) was investigated, allowing to a discussion of the transport mechanisms in these films. (C) 2007 American Institute of Physics.

Synthesis and electrochemical behavior of single-crystal magnetite nanoparticles

Water-dispersed magnetite nanoparticle synthesis from iron(II) chloride in dimethyl sulfoxide (DMSO)-water solution at different DMSO-water ratios in alkaline medium was reported. TEM and XRD results suggest a single-crystal formation with mean particle size in the range 4-27 nm. Magnetic nanoparticles are formed by the oxidative hydrolysis reaction from green rust species that leads to FeOOH formation, followed by autocatalysis of the adsorbed available Fe(II) on the FeOOH surfaces. The available hydroxyl groups seem to be dependent on the DMSO-water ratio due to strong molecular interactions presented by the solvent mixture. Goethite phase on the magnetite surface was observed by XRD data only for sample synthesized in the absence of DMSO. In addition, cyclic voltammetry with carbon paste electroactive electrode (CV-CPEE) results reveal two reduction peaks near 0 and +400 mV associated with the presence of iron(III) in different chemical environments related to the surface composition of magnetite nanoparticles. The peak near +400 mV is related to a passivate thin layer surface such as goethite on the magnetite nanoparticle, assigned to the intensive hydrolysis reaction due to strong interactions between DMSO-water molecules in the initial solvent mixture that result in a hydroxyl group excess in the medium. Pure magnetite phase was only observed in the samples prepared at 30% (30W) and 80% (80W) water in DMSO in agreement with the structured molecular solvent cluster formation. The goethite phase present on the, magnetite nanoparticle surface like a thin passivate layer only was detectable using CV-CPEE, which is a very efficient, cheap, and powerful tool for surface characterization, and it is able to determine the passivate oxyhydroxide or oxide thin layer presence on the nanoparticle surface.

Oxidation of ethanol and its derivatives on well defined pt single crystal electrodes vicinal to pt(111): a comparative study

The oxidation of ethanol (EtOH) at Pt(111) electrodes is dominated by the 4e path leading to acetic acid. The inclusion of surface defects such as those present on stepped surfaces leads to an increase of the reactivity towards the most desirable 12e path leading to CO2 as final product. This path is also favored when the methyl group is more oxidized, as in the case of ethylene glycol (EG) that spontaneously decomposes to CO on Pt(111) electrodes, thus showing a more effective breaking of the C-C bond. Some trends in reactivity can be envisaged when other derivative molecules are compared at well-ordered electrodes. This strategy was used in the past, but the improvement in the electrode pretreatment and the overall information available on the subject suggest that relevant information is still missing.

Ellipsometric Study of Single-Crystal γ-Inse From 1.5 To 9.2 Ev

We report the component E ┴ c of the pseudodielectric-function tensor <ε(E)> = <ε1(E)> + i< ε2(E)> of γ-phase single-crystal InSe, obtained from 1.5 to 9.2 eV by vacuum-ultraviolet spectroscopic ellipsometry with the sample at room temperature. Overlayer artifacts were reduced as far as possible by measuring fresh surfaces prepared by cleavage. Accurate critical-point energies of observed structures were obtained by a combined method of spectral analysis.

Formation of an extended CoSi2 thin nanohexagons array coherently buried in silicon single crystal

A Co-doped silica film was deposited on the surface of a Si(100) wafer and isothermally annealed at 750 degrees C to form spherical Co nanoparticles embedded in the silica film and a few atomic layer thick CoSi2 nanoplatelets within the wafer. The structure, morphology, and spatial orientation of the nanoplatelets were characterized. The experimental results indicate that the nanoplatelets exhibit hexagonal shape and a uniform thickness. The CoSi2 nanostructures lattice is coherent with the Si lattice, and each of them is parallel to one of the four planes belonging to the {111} crystallographic form of the host lattice. (C) 2012 American Institute of Physics. [doi:10.1063/1.3683493]

Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon

The objective of this paper is to show the dependence relationship between the crystallographic orientations upon brittle-to-ductile transition during diamond turning of monocrystalline silicon. Cutting tests were performed using a -5 degrees rake angle round nose diamond tool at different machining scales. At the micrometre level, the feedrate was kept constant at 2.5 micrometres per revolution (mu m/r), and the depth of cut was varied from 1 to 5 mu m. At the submicrometre level, the depth of cut was kept constant at 500 nm and the feedrate varied from 5 to 10 mu m/r. At the micrometre level, the uncut shoulder generated with an interrupted cutting test procedure provided a quantitative measurement of the ductile-to-brittle transition. Results show that the critical chip thickness in silicon for ductile material removal reaches a maximum of 285 nm in the [100] direction and a minimum of 115 nm in the [110] direction, when the depth of cut was 5 mu m. It was found that when a submicrometre depth of cut was applied, microcracks were revealed in the [110] direction, which is the softer direction in silicon. Micro Raman spectroscopy was used to estimate surface residual stress after machining. Compressive residual stress in the range 142 MPa and smooth damage free surface finish was probed in the [100] direction for a depth of cut of 5 mu m, whereas residual stresses in the range 350 MPa and brittle damage was probed in the [110] direction for a depth of cut of 500 nm.