Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS

This work investigates the harmonic distortion (HD) in 2-MOS balanced structures composed of triple gate FinFETs. HD has been evaluated through the determination of the third-order harmonic distortion (HD3), since this represents the major non-linearity source in balanced structures. The 2-MOS structures with devices of different channel lengths (L) and fin widths (W(fin)) have been studied operating in the linear region as tunable resistors. The analysis was performed as a function of the gate voltage, aiming to verify the correlation between operation bias and HD3. The physical origins of the non-linearities have been investigated and are pointed out. Being a resistive circuit, the 2-MOS structure is generally projected for a targeted on-resistance, which has also been evaluated in terms of HD3. The impact of the application of biaxial strain has been studied for FinFETs of different dimensions. It has been noted that HD3 reduces with the increase of the gate bias for all the devices and this reduction is more pronounced both in narrower and in longer devices. Also, the presence of strain slightly diminishes the non-linearity at a similar bias. However, a drawback associated with the use of strain engineering consists in a significant reduction of the on-resistance with respect to unstrained devices. (C) 2011 Elsevier Ltd. All rights reserved.

Amplitude response of a unilaterally constrained nonlinear micromechanical resonator

Dynamical systems that involve impacts frequently arise in engineering. This Letter reports a study of such a system at microscale that consists of a nonlinear resonator operating with an unilateral impact. The microresonators were fabricated on silicon-on-insulator wafers by using a one-mask process and then characterised by using the capacitively driving and sensing method. Numerical results concerning the dynamics of this vibro-impact system were verified by the experiments. Bifurcation analysis was used to provide a qualitative scenario of the system steady-state solutions as a function of both the amplitude and the frequency of the external driving sinusoidal voltage. The results show that the amplitude of resonant peak is levelled off owing to the impact effect and that the bandwidth of impacting is dependent upon the nonlinearity and the operating conditions.

H-induced platelet and crack formation in hydrogenated epitaxial Si/Si0.98 B0.02 /Si structures

An approach to transfer a high-quality Si layer for the fabrication of silicon-on-insulator wafers has been proposed based on the investigation of platelet and crack formation in hydrogenated epitaxialSi/Si0.98B0.02/Si structures grown by molecular-beam epitaxy. H-related defect formation during hydrogenation was found to be very sensitive to the thickness of the buried Si0.98B0.02 layer. For hydrogenated Si containing a 130nm thick Si0.98B0.02 layer, no platelets or cracking were observed in the B-doped region. Upon reducing the thickness of the buried Si0.98B0.02 layer to 3nm, localized continuous cracking was observed along the interface between the Si and the B-doped layers. In the latter case, the strains at the interface are believed to facilitate the (100)-oriented platelet formation and (100)-oriented crack propagation.

Analysis of source-follower buffers implemented with graded-channel SOI nMOSFETs operating at cryogenic temperatures

This work studies the operation of source-follower buffers implemented with standard and graded-channel (GC) fully depleted (FD) SCI nMOSFETs at low temperatures. The analysis is performed by comparing the voltage gain of buffers implemented with GC and standard SOI nMOS transistors considering devices with the same mask channel length and same effective channel length. It is shown that the use of GC devices allows for achieving improved gain in all inversion levels in a wide range of temperatures. In addition, this improvement increases as temperature is reduced. It is shown that GC transistors can provide virtually constant gain, while for standard devices, the gain departs from the maximum value depending on the temperature and inversion level imposed by the bias current and input voltage. Two-dimensional numerical simulations were performed in order to study the reasons for the enhanced gain of GC MOSFETs at low temperatures. (C) 2009 Elsevier Ltd. All rights reserved.

The effect of silicon content on the microstructure and creep behavior in die-cast magnesium AS alloys

The effect of increasing levels of silicon on the microstructure and creep properties of high-pressure die-cast Mg-Al-Si (AS) alloys has been investigated. The morphology of the Mg2Si phase in die-cast AS alloys was found to be a function of the silicon content. The Mg2Si particles in castings with up to 1.14 wt pct Si have a Chinese script morphology. For AS21 alloys with silicon contents greater than 1.4 wt pet Si (greater than the alpha-Mg2Si binary eutectic point), some Mg2Si particles have a coarse blocky shape. Increasing the silicon content above the eutectic level results in an increase in the number of coarse faceted Mg2Si particles in the microstructure. Creep rates at 100 hours were found to decrease with increasing silicon content in AS-type alloys. The decrease in creep rate was most dramatic for silicon contents up to 1.1 wt pct. Further additions of silicon of up to 2.64 wt pct also resulted in significant decreases in creep rate.

Synthesis and characterization of implants for bone substitutions made of biomedical apatites containing silicon

In the last decades the development of bone substitutes characterized by a superior biomimetism has become of particular interest, owing to the increasing economic and societal impact of the bone diseases. In the present work of research the development of bone substitutes characterized by improved biomimetism, has been faced in a chemical, structural and morphological perspective. From a chemical point of view, it has been developed the synthesis of hydroxyapatite powders, exhibiting multiple ionic substitutions in both cationic and anionic sites, so to simulate the chemical composition of the natural bone. Particular emphasis has been given to the effect of silicon on the chemical-physical and solubility properties of the obtained hydroxyapatites. From a structural point of view, it has been developed the synthesis of ceramic composite materials, based on hydroxyapatite and calcium silicates, employed both as a reinforcing phase, to raise the mechanical strength of the composite compared to hydroxyapatite, and as a bioactive phase, able to increase the bioactivity properties of the whole ceramic. Finally the unique morphological features of the bone were mimicked by taking inspiration by Nature, so that native wood structures were treated in chemical and thermal way to obtain hydroxyapatite porous materials characterized by the same morphology as the native wood. The results obtained in the present work were positive in all the three different areas of investigation, so to cover the three different aspects of biomimetism, chemical, structural and morphological. Anyway, only at the convergence of the three different fields it is possible to find out the best solutions to develop the ideal bone-like scaffold. Thus, the future activity should be devoted to solve the problems at the borderline between the different research lines, which hamper this convergence and in consequence, the achievement of a bone scaffold able to mimic the various aspects exhibited by the bone tissue

HCl gas gettering of 3d transition metals for crystalline silicon solar cell concepts

In order to reduce the costs of crystalline silicon solar cells, low-cost silicon materials like upgraded metallurgical grade (UMG) silicon are investigated for the application in the photovoltaic (PV) industry. Conventional high-purity silicon is made by cost-intensive methods, based on the so-called Siemens process, which uses the reaction to form chlorosilanes and subsequent several distillation steps before the deposition of high-purity silicon on slim high-purity silicon rods. UMG silicon in contrast is gained from metallurgical silicon by a rather inexpensive physicochemical purification (e.g., acid leaching and/or segregation). However, this type of silicon usually contains much higher concentrations of impurities, especially 3d transition metals like Ti, Fe, and Cu. These metals are extremely detrimental in the electrically active part of silicon solar cells, as they form recombination centers for charge carriers in the silicon band gap. This is why simple purification techniques like gettering, which can be applied between or during solar cell process steps, will play an important role for such low-cost silicon materials. Gettering in general describes a process, whereby impurities are moved to a place or turned into a state, where they are less detrimental to the solar cell. Hydrogen chloride (HCl) gas gettering in particular is a promising simple and cheap gettering technique, which is based on the reaction of HCl gas with transition metals to form volatile metal chloride species at high temperatures.rnThe aim of this thesis was to find the optimum process parameters for HCl gas gettering of 3d transition metals in low-cost silicon to improve the cell efficiency of solar cells for two different cell concepts, the standard wafer cell concept and the epitaxial wafer equivalent (EpiWE) cell concept. Whereas the former is based on a wafer which is the electrically active part of the solar cell, the latter uses an electrically inactive low-cost silicon substrate with an active layer of epitaxially grown silicon on top. Low-cost silicon materials with different impurity grades were used for HCl gas gettering experiments with the variation of process parameters like the temperature, the gettering time, and the HCl gas concentration. Subsequently, the multicrystalline silicon neighboring wafers with and without gettering were compared by element analysis techniques like neutron activation analysis (NAA). It was demonstrated that HCl gas gettering is an effective purification technique for silicon wafers, which is able to reduce some 3d transition metal concentrations by over 90%. Solar cells were processed for both concepts which could demonstrate a significant increase of the solar cell efficiency by HCl gas gettering. The efficiency of EpiWE cells could be increased by HCl gas gettering by approximately 25% relative to cells without gettering. First process simulations were performed based on a simple model for HCl gas gettering processes, which could be used to make qualitative predictions.

(Table 1) Variation in chemical composition of Black Sea ctenophores depending on size

Data of chemical analysis of Black Sea ctenophore Mnemiopsis leidyi indicates that their body contains on average 5.28% carbon, 3.48% nitrogen, 0.11% phosphorus, and 0.03% silicon on dry weight. Mean ratios of the main biogenic elements in ctenophores is C:N=1.4, N:P=10.9, and C:P=32.2. Comparing concentration of the main biogenic elements in the surface layer with their concentrations in ctenophores it is concluded that mass development of M. leidyi has negative effect on the hydrochemical structure of the Black Sea.

The growth of silicon sheets for photovoltaic applications /

The status of silicon sheet development for photovoltaic applications is critically reviewed. Silicon sheet growth processes are classified according to their linear growth rates. The "fast" growth processes, which include edge-defined film-fed growth, silicon on ceramic, dendritic-web growth, and ribbon-to-ribbon growth, are comparatively ranked subject to criteria involving growth stability, sheet productivity, impurity effects, crystallinity, and solar cell results. The status of more rapid silicon ribbon growth techniques, such as horizontal ribbon growth and melt quenching, is also reviewed. The emphasis of the discussions is on examining the viability of these sheet materials as solar cell substrates for low-cost silicon photovoltaic systems.

The typic in Kant’s critique of practical reason : moral judgment and symbolic representation

Comment pouvons-nous représenter un principe moral universel de manière à le rendre applicable à des cas concrets ? Ce problème revêt une forme aiguë dans la philosophie morale d’Emmanuel Kant (1724-1804), tout particulièrement dans sa théorie du jugement moral, car il soutient que l’on doit appliquer la loi morale « suprasensible » à des actions dans le monde sensible afin de déterminer celles-ci comme moralement bonnes ou mauvaises. Kant aborde ce problème dans un chapitre de la Critique de la raison pratique (1788) intitulé « De la typique de la faculté de juger pratique pure » (KpV 5: 67-71). La première partie de la thèse vise à fournir un commentaire compréhensif et détaillé de ce texte important, mais trop peu étudié. Étant donné que la loi morale, en tant qu’Idée suprasensible de la raison, ne peut pas être appliquée directement à des actions dans l’intuition sensible, Kant a recours à une forme particulière de représentation indirecte et symbolique. Sa solution inédite consiste à fournir la faculté de juger avec un « type [Typus] », ou analogue formel, de la loi morale. Ce type est la loi de la causalité naturelle : en tant que loi, il sert d’étalon formel pour tester l’universalisabilité des maximes ; et, en tant que loi de la nature, il peut aussi s’appliquer à toute action dans l’expérience sensible. Dès lors, le jugement moral s’effectue par le biais d’une expérience de pensée dans laquelle on se demande si l’on peut vouloir que sa maxime devienne une loi universelle d’une nature contrefactuelle dont on ferait soi-même partie. Cette expérience de pensée fonctionne comme une « épreuve [Probe] » de la forme des maximes et, par ce moyen, du statut moral des actions. Kant soutient que tout un chacun, même « l’entendement le plus commun », emploie cette procédure pour l’appréciation morale. De plus, la typique prémunit contre deux menaces à l’éthique rationaliste de Kant, à savoir l’empirisme (c’est-à-dire le conséquentialisme) et le mysticisme. La seconde partie de la thèse se penche sur l’indication de Kant que la typique « ne sert que comme un symbole ». Un bon nombre de commentateurs ont voulu assimiler la typique à la notion d’« hypotypose symbolique » présentée dans le § 59 de la Critique de la faculté de juger (1790). La typique serait un processus de symbolisation esthétique consistant à présenter, de façon indirecte, la représentation abstraite de la loi morale sous la forme d’un symbole concret et intuitif. Dans un premier chapitre, cette interprétation est présentée et soumise à un examen critique qui cherche à montrer qu’elle est erronée et peu judicieuse. Dans le second chapitre, nous poursuivons une voie d’interprétation jusqu’ici ignorée, montrant que la typique a de plus grandes continuités avec la notion d’« anthropomorphisme symbolique », une procédure strictement analogique introduite auparavant dans les Prolégomènes (1783). Nous en concluons, d’une part, que la typique fut un moment décisif dans l’évolution de la théorie kantienne de la représentation symbolique et que, d’autre part, elle marque la réalisation, chez Kant, d’une conception proprement critique de la nature et de la morale comme deux sphères distinctes, dont la médiation s’opère par le biais des concepts de loi et de conformité à la loi (Gesetzmässigkeit). En un mot, la typique s’avère l’instrument par excellence du « rationalisme de la faculté de juger ».

Adubação foliar com silício na cultura do milho

Inúmeros trabalhos têm demonstrado o efeito benéfico da adubação com silício sobre o acréscimo da produção de diversas culturas, como, por exemplo, arroz, cana-de-açúcar e batata. No entanto, são escassas as informações sobre os benefícios nutricionais do silício para a cultura do milho. Desta maneira, objetivou-se, neste estudo, avaliar o efeito de doses e épocas de aplicação de silício, via foliar, nas características agronômicas e na produtividade do milho, cultivado no ano agrícola 2007/2008. O delineamento experimental adotado foi o de blocos casualizados, em esquema fatorial (4 x 3) + 1, com quatro repetições, envolvendo doses de silício (130, 260, 390 e 520 g ha-1 de Si) aplicadas via foliar, épocas de aplicação (2, 5 e 8 folhas expandidas) e uma testemunha (sem aplicação de Si). As variáveis analisadas foram altura das plantas e a inserção da primeira espiga, diâmetro de colmo, índice de clorofila foliar, teor foliar de silício, número de grãos por espiga, massa de 100 grãos e produtividade de grãos. O silício aplicado via foliar influenciou somente o teor foliar de Si.

Silício como indutor de resistência no controle do tripes do prateamento Enneothrips flavens Moulton, 1941 (Thysanoptera: Thripidae) e seus reflexos na produtividade do amendoinzeiro

O tripes do prateamento, Enneothrips flavens Moulton, 1941, é considerado a principal praga do amendoim no Brasil, por sua ocorrência generalizada, pelos elevados níveis populacionais e pelos danos causados a cultura. Objetivou-se, com este trabalho, avaliar o efeito do silício sobre a população de E. flavens e sobre a produtividade do amendoinzeiro. Avaliaram-se, semanalmente, 10 folíolos abertos ou semi-abertos no terço superior das plantas do cultivar IAC 886, por parcela. Os tratamentos foram constituídos por: uma aplicação foliar de silício realizada aos 20 dias após a emergência, duas aplicações foliares de silício realizadas aos 20 e 55 dias, e o controle. Uma aplicação de silício proporcionou proteção às plantas de amendoim, reduzindo o número de adultos e ninfas do tripes de E. flavens e aumentou a produtividade da cultura em 31,30% de amendoim em casca e 28,85% em grãos.

Silício na tolerância ao alumínio por plantas de arroz

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Efeito das concentrações de nitrogênio e silício em plantas de milho e de trigo sob cultivo hidropônico

Pós-graduação em Agronomia (Produção Vegetal) - FCAV

Efeito do silício aplicado no solo e em pulverização foliar na incidência da lagarta do cartucho na cultura do milho

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)