Strain-induced in-plane optical anisotropy in (001) GaAs/AlGaAs superlattice studied by reflectance difference spectroscopy

In-plane optical anisotropy (IPOA) in (001) GaAs/AlGaAs superlattice induced by uniaxial strain has been investigated by reflectance difference spectroscopy (RDS). Uniaxial strain on the order of 10(-4) was introduced by bending a strip sample with a stress apparatus. The IPOA of all interband transitions shows a linear dependence on strain. The birefringence and dichroism spectra induced by strain are obtained by RDS on the basis of a three-phase model, which is in good agreement with the reported results. (c) 2006 American Institute of Physics.

Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods

Nation Natural Science Foundation of China 50672079 60676027 60837001 60776007; National Basic Research Program of China (973 Program) 2007CB613404; China-MOST International Sci & Tech Cooperation and Exchange 2008DFA51230

Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing

Strain relaxation in initially flat SiGe film on Si(1 0 0) during rapid thermal annealing is studied. The surface roughens after high-temperature annealing, which has been attributed to the intrinsic strain in the epilayers. It is interesting to find that high-temperature annealing also results in roughened interface, indicating the occurrence of preferential interdiffusion. It is suggested that the roughening at the surface makes the intrinsic strain in the epilayer as well as the substrate unequally distributed, causing preferential interdiffusion at the SiGe/Si interface during high-temperature annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy

Atomic force microscopy and photoluminescence spectroscopy (PL) has been used to study asymmetric bilayer InAs quantum dot (QD) structures grow by molecular-beam epitaxy on GaAs (001) substrates. The two InAs layers were separated by a 7-nm-thick GaAs spacer layer and were grown at different substrate temperature. We took advantage of the intrinsic nonuniformity of the molecular beams to grow the seed layer with an average InAs coverage of 2.0 ML. Then the seed layer thickness could be divided into three areas: below, around and above the critical thickness of the 2D-3D transition along the 11101 direction of the substrate. Correspondingly, the nucleation mechanisms of the upper InAs layer (UIL) could be also divided into three areas: temperature-controlled, competition between temperature-controlled and strain-induced, and strain-induced (template-controlled) nucleation. Small quantum dots (QDs) with a large density around 5 x 10(10) cm(-2) are found in the temperature-controlled nucleation area. The QD size distributions undergo a bimodal to a unimodal transition with decreasing QD densities in the strain-induced nucleation area, where the QD densities vary following that of the seed layer (templating effect). The optimum QD density with the UIL thickness fixed at 2.4 ML is shown to be around 1.5 x 10(10) cm(-2), for which the QD size distribution is unimodal and PL emission peaks at the longest wavelength. The QDs in the in-between area exhibit a broad size distribution with small QDs and strain-induced large QDs coexisting.

Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing

Strain relaxation in initially flat SiGe film on Si(1 0 0) during rapid thermal annealing is studied. The surface roughens after high-temperature annealing, which has been attributed to the intrinsic strain in the epilayers. It is interesting to find that high-temperature annealing also results in roughened interface, indicating the occurrence of preferential interdiffusion. It is suggested that the roughening at the surface makes the intrinsic strain in the epilayer as well as the substrate unequally distributed, causing preferential interdiffusion at the SiGe/Si interface during high-temperature annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

Potential-induced transformation for surfactant aggregates on a metal surface

Surfactant adsorption on metal surfaces has been used to limit the activity of the electrode surface and to stabilize colloidal clusters and nanoparticles in solution, but the adsorption and relative potential-induced structure change of the surfactant were not known. Here, the adsorption of sodium dodecyl sulfate (SDS) on a Au(111) surface under potential control was investigated by in situ scanning tunneling microscopy (STM). The STM images showed that the morphology of SDS on Au(111) was changed from a hemi-cylindrical micellar monolayer to a compact and uniform bilayer through control of the potential. The transition between the hemimicellar monolayer and the compact bilayer is not reversed after a period of time. The model of potential-induced transformation for SDS aggregates on Au(111) was established. (C) 2001 Elsevier Science B.V. All rights reserved.

Strain induced anomalous red shift in mesoscopic iron oxide prepared by a novel technique

Nano magnetic oxides are promising candidates for high density magnetic storage and other applications. Nonspherical mesoscopic iron oxide particles are also candidate materials for studying the shape, size and strain induced modifications of various physical properties viz. optical, magnetic and structural. Spherical and nonspherical iron oxides having an aspect ratio, ~2, are synthesized by employing starch and ethylene glycol and starch and water, respectively by a novel technique. Their optical, structural, thermal and magnetic properties are evaluated. A red shift of 0⋅24 eV is observed in the case of nonspherical particles when compared to spherical ones. The red shift is attributed to strain induced changes in internal pressure inside the elongated iron oxide particles. Pressure induced effects are due to the increased overlap of wave functions. Magnetic measurements reveal that particles are superparamagnetic. The marked increase in coercivity in the case of elongated particles is a clear evidence for shape induced anisotropy. The decreased specific saturation magnetization of the samples is explained on the basis of weight percentage of starch, a nonmagnetic component and is verified by TGA and FTIR studies. This technique can be modified for tailoring the aspect ratio and these particles are promising candidates for drug delivery and contrast enhancement agents in magnetic resonance imaging

Effect of thermomechanical parameters on the critical strain for ultrafine ferrite formation through hot torsion testing

A C–Mn–V steel was used to study ultrafine ferrite formation (1–3 μm) through dynamic strain-induced transformation (DSIT) using hot torsion experiments. A systematic study determined the critical strain for the start of DSIT (C,DSIT), although this may not lead to a fully ultrafine microstructure. Therefore, the strain to produce an ultrafine ferrite (UFF) as final microstructure (C,UFF) during deformation was also determined. In addition, the effect of thermomechanical parameters such as deformation temperature, prior austenite grain size, strain rate and cooling rate on C,DSIT and C,UFF has been evaluated. DSIT ferrite nucleated on prior austenite grain boundaries at an early stage of straining followed by intragranular nucleation at higher strains. The prior austenite grain size affected the distribution of DSIT ferrite nucleation sites at an early stage of transformation and the subsequent coarsening behaviour of the grain boundary and intragranular ferrite grains during post-deformation cooling. Also, C,DSIT and C,UFF increased with an increase in the prior austenite grain size and deformation temperature. The post-deformation cooling had a strong effect not only on C,UFF but also the UFF microstructure (i.e. final ferrite grain size and second phase characteristics).

The formation of ultrafine ferrite through static transformation in low carbon steels

A novel approach was used to produce an ultrafine grain structure in low carbon steels with a wide range of hardenability. This included warm deformation of supercooled austenite followed by reheating in the austenite region and cooling (RHA). The ultrafine ferrite structure was independent of steel composition. However, the mechanism of ferrite refinement hanged with the steel quench hardenability. In a relatively low hardenable steel, the ultrafine structure was produced through dynamic strain-induced transformation, whereas the ferrite refinement was formed by static transformation in steels with high quench hardenability. The use of a model Ni–30Fe austenitic alloy revealed that the deformation temperature has a strong effect on the nature of the intragranular defects. There was a transition temperature below which the cell dislocation structure changed to laminar microbands. It appears that the extreme refinement of ferrite is due to the formation of extensive high angle intragranular defects at these low deformation temperatures that then act as sites for static transformation.

Effect of transformation mechanism (static or dynamic) on final ferrite grain size

A simple series of test was developed to highlight and compare the difference between the static strain induced transformation (SSIT) and the dynamic strain induced transformation (DSIT) mechanism in grain refinement and also to investigate the origin of the difference between the two mechanisms. The results showed that while the SSIT sets up a two-dimensional impingement among the ferrite grains, it cannot avoid their coarsening (normal growth). However, the DSIT forms a group of grains with a three-dimensional impingement which does not coarsen and maintains their fine size throughout the transformation, thereby, reduces the final average grain size.

Nanoparticle enhanced conductivity in organic ionic plastic crystals : space charge versus strain induced defect mechanism

High conductivity in solid-state electrolytes is a critical requirement for many advanced energy and other electrochemical applications. Plastic crystalline materials have shown promise in this regard, and the inclusion of nanosized inorganic particles in both amorphous and crystalline materials has indicated order of magnitude enhancements in ion transport induced by space charge or other defect enhancement. In this paper we present conductivity enhancements in the plastic crystal N,N‘-ethylmethylpyrrolidinium bis(trifluoromethanesulfonyl)amide ([C₂mpyr][NTf₂]) induced by nanosized SiO₂ particles. The addition of the nanoparticles dramatically increases plasticity and ion mobility. Positron annihilation lifetime spectroscopy (PALS) measurements indicate an increase in mean defect size and defect concentration as a result of nanoparticle inclusion. The scaling of the conductivity with size suggests that a “trivial space charge” effect is operable, although a strain induced enhancement of defects (in particular extended defects) is also likely given the observed increase in plasticity.