953 resultados para SEMICONDUCTOR-LASER
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The butt-coupling between a semiconductor laser diode and a fiber Bragg grating external cavity acts a key roll on the laser characteristics. The scatter matrix method considering the butt-coupling efficiency is used to analyze the butt-coupling between them. It is found that the butt-coupling distance and coupling efficiency determine the laser characteristics. For strong feedback, the single lasing wavelength changes in the reflection bandwidth of the effective reflectivity ( approximately the Bragg region of the fiber Bragg grating) as the distances change. For weak feedback condition, some different results are obtained. The SMSRs in the two conditions are presented and analyzed. These results can provide important design guidance of device parameters for the practical fabrication.
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The theoretical investigation of the coupling efficiency of a laser diode to a single mode fiber via a hemispherical lens on the tip of the tapered fiber in the presence of possible transverse offset and angular mismatch is reported.Without the misalignment,coupling efficiency increases with the decreasing of taper length.With the misalignment,this relation is that the coupling efficiency decreases with each kind of offset.
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于2010-11-23批量导入
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于2010-11-23批量导入
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A single longitudinal mode and narrow line width external cavity semiconductor laser is proposed. It is constructed with a semiconductor laser, collimator, a flame grating, and current and temperature control systems. The one facet of semiconductor laser is covered by high transmission film, and another is covered by high reflection film. The flame grating is used as light feedback element to select the mode of the semiconductor laser. The temperature of the constructed external cavity semiconductor laser is stabilized in order of 10(-3)degreesC by temperature control system. The experiments have been carried out and the results obtained-the spectral fine width of this laser is compressed to be less than 1.4MHz from its original line-width of more than 1200GHz and the output stability (including power and mode) is remarkably enhanced.
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An external cavity semiconductor laser interferometer used to measure far distance micro-vibration in real time is proposed. In the interferometer, a single longitudinal mode and excellent coherent characteristic grating external cavity semiconductor laser is constructed and acted as a light source and a phase compensator. Its coherent length exceeds 200 meters. The angle between normal and incidence beam of the far object is allowed to change in definite range during the measurement with this interferometer, and this makes the far distance interference measurement easier and more convenient. Also, it is not required to keep the amplitudes of the first and second harmonic components equal, and then the dynamic range is increased. A feedback control system is used to compensate the phase disturbance between the two interference beams introduced by environmental vibration.
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The semiconductor microlasers with an equilateral triangle resonator which can be fabricated by dry etching technique from the laser wafer of the edge emitting laser, are analyzed by FDTD technique and rate equations. The results show that ETR microlaser is suitable to realize single mode operation. By connecting an output waveguide to one of the vertices of the ETR, we still can get the confined modes with high quality factors. The EM microlasers are potential light sources for photonic integrated circuits.
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We present a novel system design that can generate the optimized wavelength-tunable optical pulse streams from an uncooled gain-switched Fabry-Perot semiconductor laser using an optical amplifier as external light source. The timing jitter of gain-switched laser has been reduced from about 3 ps to 600 fs and the pulse width has been optimized by using our system. The stability of the system was also experimentally investigated. Our results show that an uncooled gain-switched FP laser system can feasibly produce the stable optical pulse trains with pulse width of 18 ps at the repetition frequency of 5 GHz during 7 h continuous working. We respectively proved the system feasibility under 1 GHz, 2.5 GHz and 5 GHz operation. (c) 2008 Elsevier B.V. All rights reserved.
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We show numerically that direct delayed optoelectronic feedback can suppress hysteresis and bistability in a directly modulated semiconductor laser. The simulation of a laser with feedback is performed for a considerable range of feedback strengths and delays and the corresponding values for the areas of the hysteresis loops are calculated. It is shown that the hysteresis loop completely vanishes for certain combinations of these parameters. The regimes for the disappearance of bistability are classified globally. Different dynamical states of the laser are characterized using bifurcation diagrams and time series plots.
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Chaotic dynamics of directly modulated semiconductor lasers have been studied extensively over the last two decades because of their application in secure optical communication. However, chaos is generally suppressed in such systems when the nonlinear gain reduction factor is above 0.01 which is very much smaller than the reported values in semiconductors like InGaAsP. In this paper we show that by giving an optoelectronic feedback with appropriate delay one can increase the range of the values of the gain reduction factor for which chaos can be observed. Numerical studies show that negative feedback is more efficient in producing chaotic dynamics.
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We present an educational software addressed to the students of optical communication courses, for a simple visualization of the basic dynamic processes of semiconductor lasers. The graphic interface allows the user to choose the laser and the modulation parameters and it plots the laser power output and instantaneous frequency versus time. Additionally, the optical frequency variations are numerically shifted into the audible frequency range in order to produce a sound wave from the computer loudspeakers. Using the proposed software, the student can simultaneously see and hear how the laser intensity and frequency change, depending on the modulation and device parameters.
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This paper analyzes the behavior of a neural processing unit based on the optical bistable properties of semiconductor laser amplifiers. A similar unit to the reported here was previously employed in the simulation of the mammalian retina. The main advantages of the present cell are its larger fan-out and the possibility of different responses according to the light wavelength impinging onto the cell. These properties allow to work with larger structures as well as to obtain different behaviors according to the light characteristics. This new approach gives a possible modeling closer to the real biological configurations. Moreover, a more detailed analysis of the basic cell internal behavior is reported
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The optical bistability occurring in laser diode amplifiers is used to design an all-optical logic gate capable to provide the whole set of logic functions. The structure of the reported logic gate is based on two connected 1550nm laser amplifiers (Fabry-Perot and distributed feedback laser amplifiers).