999 resultados para Photoluminescence emission


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CO2 laser irradiation experiments on ZnO thin films are reported. The structural, optical, luminescent and vibrational properties of the samples were investigated by X-ray diffraction (XRD), transmittance, photoluminescence (PL) and Raman measurements. XRD results show that the crystalline of the irradiated films was improved. The (002) peaks of irradiated ZnO films shift to. higher 20 angles due to the stress relaxation in the case of laser beam irradiation. From optical transmittance spectra, all films exhibit high transmittance in the visible range, the optical band edge of irradiated films showed a redshift compared with that of as-grown films. Compared with the as-grown films, the photoluminescence emission (in particular the relative intensities of visible emissions) intensities of irradiated samples enhanced. In the Raman scattering spectral both the A I. and E modes exhibited slight Raman blueshift. (c) 2005 Elsevier B.V. All rights reserved.

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α-(Yb1-xErx)2Si2O7 thin films on Si substrates were synthesized by magnetron co-sputtering. The optical emission from Er3+ ions has been extensively investigated, evidencing the very efficient role of Yb-Er coupling. The energy-transfer coefficient was evaluated for an extended range of Er content (between 0.2 and 16.5 at.%) reaching a maximum value of 2 × 10⁻¹⁶ cm⁻³s⁻¹. The highest photoluminescence emission at 1535 nm is obtained as a result of the best compromise between the number of Yb donors (16.4 at.%) and Er acceptors (1.6 at.%), for which a high population of the first excited state is reached. These results are very promising for the realization of 1.54 μm optical amplifiers on a Si platform.

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Eu2+ doped ZnS nanocrystals exhibit new luminescence properties because of the enlarged energy gap of nanocrystalline ZnS host due to quantum confinement effects. Photoluminescence emission at about 520 nm from Eu2+ doped ZnS nanocrystals at room temperature is investigated by using photoluminescence emission and excitation spectroscopy. Such green emission with long lifetime (ms) is proposed to be a result of excitation, ionization, carriers recapture and recombination via Eu2+ centers in nanocrystalline ZnS host.

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The measurements of VUV-UV photoluminescence emission (PL) and photoluminescence excitation (PLE) spectra of rare earth ions activated strontium orthophosphate [Sr-3(PO4)(2):RE, RE = Ce, Sm, Eu, Tb] are performed. Whenever the samples are excited by VUV or UV light, the typical emission of Ce-3+,Ce- Sm3+, Eu3+, Eu2+ and Tb3+ ions can be observed in PL spectra, respectively. The charge transfer bands (CTBs) of Sm3+ and Eu3+ are found, respectively, peaking at 206 and 230nm. The absorption bands peaking in the region of 150-160 nm are assigned to the host lattice sensitization bands, i.e., the band-to-band transitions of PO43- grouping in Sr-3(PO4)(2). It is speculated that the first f-d transitions of Sm3+ (Eu3+), and the CTB of Tb3+ are, respectively, located around 165 (14 3) and 167 urn by means of VUV-UV PLE spectra and relational empirical formula, these f-d transitions or CT bands are included in the bands with the maxima at 150-160 nm, respectively. The valence change of europium from trivalent to divalent in strontium orthophosphate prepared in air is observe by VUV-UV PL and PLE spectra.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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The emission of wide band photoluminescence showed a synergic effect on barium zirconate and barium titanate thin films in alternate multilayer system at room temperature by 488 nm exiting wavelength. The thin films obtained by spin-coating were annealed at 350, 450, and 550 degrees C for 2 h. The X-ray patterns revealed the complete separation among the BaTiO3 and BaZrO3 phases in the adjacent films. Visible and intense photoluminescence was governed by BaZrO3 thin films in the multilayer system. Quantum mechanics calculations were used in order to simulate ordered and disordered thin films structures. The disordered models, which were built by using the displacement of formers and modifier networks, showed a different symmetry in each system, which is in accordance with experimental photoluminescence emission, thus allowing to establish a correlation among the structural and optical properties of these multilayered systems.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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A combined experimental and theoretical study was conducted to analyze the photoluminescence (PL) properties of ordered and disordered CaWO4 (CW) and CaMoO4 (CM) powders. Two mechanisms were found to be responsible for photoluminescence emission in CW and CM powders. The first one, in the disordered powders, was caused by oxygen complex vacancies [MO3 center dot V-O(x)], [MO3 center dot V-O(center dot)] and [MO3 center dot V-O(center dot center dot)], where M=W or Mo, which leads to additional levels in the band gap. The second mechanism, in ordered powders, was caused by an intrinsic slight distortion of the [WO4] or [MoO4] tetrahedral in the short range. (c) 2007 American Institute of Physics.

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Ca0.95Sm0.05TiO3 (CT:Sm) powder was prepared by the polymeric precursor method (PPM). Order-disorder at short and long range has been investigated by means of Raman spectroscopy, X-ray diffraction (XRD), and photoluminescence emission (PL) experimental techniques. The broad PL band and the Sm emission spectrum measured at room temperature indicate the increase of structural order with annealing temperature. The measured PL emission reveals that the PL intensity changes with the degree of disorder in the CT: Sm. The electronic structures were performed by the ab initio periodic method in the DFT level with the hybrid nonlocal B3LYP approximation. Theoretical results are analyzed in terms of DOS, charge densities, and Mulliken charges. Localized levels into the band gap of the CT: Sm material favor the creation of the electron-hole pair, supporting the observed room-temperature PL phenomenon.

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In this work, a series of transparent di-ureasil hybrids containing different amounts of methacrylic acid modified zirconium tetrapropoxide (ZrMcOH) nanoclusters (5-85 mol%) and incorporating EuCl3 and [Eu(tta)(3)(H2O)(2)](tta = thenoyltrifluoroacetonate) complex were prepared. These hybrids are multi-wave-length emitters due to the convolution of the host intrinsic emission (electron-hole recombinations occurring in siliceous and urea cross-linkages) Eu3+ intra-4f(6) transitions. The ZrMcOH incorporation deviates the maximum excitation wavelength of the hybrid host intrinsic emission from the UV (365 nm) to the blue (420 nm) and enhances the absolute emission quantum yield from 6.0 +/- 0.6% to 9.0 +/- 0.9%, and contributes to an increase in the D-5(0) lifetime values, quantum efficiency due to a decrease in the non-radiative transition probability and OH groups coordinated to the Eu3+ ions. (C) 2010 Elsevier B.V. All rights reserved.

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In this work CdMoO 4 nanoparticles were obtained under hydrothermal conditions using microwave radiation (2.45 GHz) (MH) at 100°C for different times. These powders were analyzed by X-ray diffraction (XRD), Field-emisson gum scanning electron microscopy (FEG-SEM), Ultraviolet-visible (UV-vis) absorption spectroscopy and photoluminescence (PL) measurements. XRD pattern confirmed that the pure CdMoO 4 phases were obtained. FEG-SEM powders present large-scale and homogeneous particles with microspheres-like morphology. UV-vis results were employed to determine the optical band gap these materials. Also, it showed existence of photoluminescence (PL) emission in the green wavelength range of 540-546 nm. Photocatalytic activity of CdMoO 4 nanocrystals was examined by monitoring the degradation of rhodamine B dye.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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In this work we report studies of the photoluminescence emission in samples based on Si/SiOx films deposited by the Pulsed Electron Beam Ablation (PEBA) technique. The samples were prepared at room temperature using targets with different Si/SiO2 concentrations. The samples were characterized using X-ray Absorption Edge Spectroscopy (XANES) at the Si-K edge, Raman spectroscopy, Photoluminescence (PL) and X-ray Photoelectron Spectroscopy (XPS). The concentration of a-Si and nc-Si in the film was dependent on the silicon concentration in the target. It was also observed that the PL is strongly dependent on the structural amorphous/crystalline arrangement. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.