Photoluminescence in silicon/silicon oxide films produced by the Pulsed Electron Beam Ablation technique
| Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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| Data(s) |
01/11/2013
01/11/2013
02/08/2013
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| Resumo |
In this work we report studies of the photoluminescence emission in samples based on Si/SiOx films deposited by the Pulsed Electron Beam Ablation (PEBA) technique. The samples were prepared at room temperature using targets with different Si/SiO2 concentrations. The samples were characterized using X-ray Absorption Edge Spectroscopy (XANES) at the Si-K edge, Raman spectroscopy, Photoluminescence (PL) and X-ray Photoelectron Spectroscopy (XPS). The concentration of a-Si and nc-Si in the film was dependent on the silicon concentration in the target. It was also observed that the PL is strongly dependent on the structural amorphous/crystalline arrangement. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved. Chilean agency CONICYT [11085026] Chilean agency CONICYT |
| Identificador |
JOURNAL OF NON-CRYSTALLINE SOLIDS, AMSTERDAM, v. 358, n. 5, supl. 1, Part 3, pp. 880-884, 36951, 2012 0022-3093 http://www.producao.usp.br/handle/BDPI/37198 10.1016/j.jnoncrysol.2011.12.072 |
| Idioma(s) |
eng |
| Publicador |
ELSEVIER SCIENCE BV AMSTERDAM |
| Relação |
JOURNAL OF NON-CRYSTALLINE SOLIDS |
| Direitos |
closedAccess Copyright ELSEVIER SCIENCE BV |
| Palavras-Chave | #ELECTRON BEAM #SILICON OXIDE #PHOTOLUMINESCENCE #DEPENDENT PHOTOLUMINESCENCE #TUNABLE PHOTOLUMINESCENCE #SILICON NANOPARTICLES #SI NANOCRYSTALLITES #LOW-TEMPERATURE #POROUS SILICON #LUMINESCENCE #MATRIX #MATERIALS SCIENCE, CERAMICS #MATERIALS SCIENCE, MULTIDISCIPLINARY |
| Tipo |
article original article publishedVersion |
