Investigation of boundary layer development in a multistage LP turbine

This paper describes an investigation of the behavior of suction surface boundary layers in a modern multistage Low Pressure turbine. An array of eighteen surface-mounted hot-film anemometers was mounted on a stator blade of the third stage of a 4-stage machine. Data were obtained at Reynolds numbers between 0.9 × 105 and 1.8 × 105 and 1.8 × 105. At the majority of the test conditions, wakes from upstream rotors periodically initiated transition at about 40% surface length. In between these events, laminar separation occurred at about 75% surface length. It is inferred that the effect of the wakes on the performance of the bladerow is limited and that steady flow design methods should provide an adequate assessment of LP turbine performance during design.

Investigation of boundary layer development in a multistage LP turbine

This paper describes an investigation of the behavior of suction surface boundary layers in a modern multistage Low-Pressure turbine. An array of 18 surface-mounted hot-film anemometers was mounted on a stator blade of the third stage of a four-stage machine. Data were obtained at Reynolds numbers between 0.9 × 105 and 1.8 × 105. At the majority of the test conditions, wakes from upstream rotors periodically initiated transition at about 40 percent surface length. In between these events, laminar separation occurred at about 75 percent surface length. Because the wake-affected part of the flow appeared to be only intermittently turbulent, laminar separation also occurred at about 75 percent surface length while this flow was instantaneously laminar. At all but the lowest Reynolds numbers, the time-mean boundary layer appeared to have re-attached by the trailing edge even though it was not fully turbulent. It is inferred that the effect of the wakes on the performance of the blade row is limited and that steady flow design methods should provide an adequate assessment of LP turbine performance during design.

The transition mechanism of highly-loaded LP turbine blades

A detailed experimental investigation was conducted into the interaction of a converted wake and a separation bubble on the rear suction surface of a highly loaded low-pressure (LP) turbine blade. Boundary layer measurements, made with 2D LDA, revealed a new transition mechanism resulting from this interaction. Prior to the arrival of the wake, the boundary layer profiles in the separation region are inflexional. The perturbation of the separated shear layer caused by the converting wake causes an inviscid Kelvin-Helmholtz rollup of the shear layer. This results in the breakdown of the laminar shear layer and a rapid wake-induced transition in the separated shear layer.

Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD

Aluminum nitride (AIN) thin films were deposited on Si (111) substrates by low pressure metalorganic chemical vapor deposition system. The effects of the V/III ratios on the film structure and surface morphology were systematically studied. The chemical states and vibration modes of AIN films were characterized by X-ray photoelectron spectroscopy and Fourier transform infrared spectrometer. The optical absorption property of the AIN films, characterized by ultraviolet-visible-near infrared spectrophotometer, exhibited a sharp absorption near the wavelength of 206 mm. The AIN (002) preferential orientation growth was obtained at the V/III ratio of 10,000 and the preferential growth mechanism is presented in this paper according to the thermodynamics and kinetics process of the AIN growth.

Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD

Epitaxial growth of Zn-doped InGaAs on InP substrates has been carried out at 550degreesC by LP-MOCVD. Hole concentration as high as 6 x 10(19)cm(-3) has been achieved at the H-2 flow rate of 20 sccm through DEZn bubbler. The lattice constant of Zn-doped InGaAs was found to be dependent on the flow rate of DEZn, and the tensile strain mismatch increases with increasing H-2 flow rate of DEZn. The negative lattice mismatch of heavily Zn-dopped InGaAs may be due to, the small covalent bonding radius of zinc and the combination of butane from ethyl of DEZn,and TEGa. And the latter accelerates the pyrolysis of TEGa, which is the dominant mechanism in determining the negative mismatch of Zn-doped InGaAs. (C) 2003 Elsevier B.V. All rights reserved.

Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD

Effects of V/III ratio on heavily Si doped InGaAs and InP were studied using low pressure metalorganic chemical vapor deposition (LP-MOCVD) at a growth temperature of 550degreesC. In InGaAs, as the V/III ratio decreases from 256 to 64, the carrier concentration increases from 3.0 x 10(18) to 5.8 x 10(18) cm(-3), and the lattice mismatch of InGaAs to InP was observed to vary from -5.70 x10(-4) to 1.49 x 10(-3). In InP, when the V/III ratio decreases from 230 to 92, the same trend as that in Si doped InGaAs was observed that the carrier concentration increases from 9.2 x 10(18) to 1.3 x 10(19) cm(-3). The change of AsH3 was found to have stronger effect on Si incorporation in InGaAs at lower growth temperature than at higher growth temperature. (C) 2003 Elsevier B.V. All rights reserved.