Wave propagation analysis in adhesively bonded composite joints using the wavelet spectral finite element method

A wavelet spectral finite element (WSFE) model is developed for studying transient dynamics and wave propagation in adhesively bonded composite joints. The adherands are formulated as shear deformable beams using the first order shear deformation theory (FSDT) to obtain accurate results for high frequency wave propagation. Equations of motion governing wave motion in the bonded beams are derived using Hamilton's principle. The adhesive layer is modeled as a line of continuously distributed tension/compression and shear springs. Daubechies compactly supported wavelet scaling functions are used to transform the governing partial differential equations from time domain to frequency domain. The dynamic stiffness matrix is derived under the spectral finite element framework relating the nodal forces and displacements in the transformed frequency domain. Time domain results for wave propagation in a lap joint are validated with conventional finite element simulations using Abaqus. Frequency domain spectrum and dispersion relation results are presented and discussed. The developed WSFE model yields efficient and accurate analysis of wave propagation in adhesively-bonded composite joints. (C) 2014 Elsevier Ltd. All rights reserved.

Subcooled Pool Boiling at Microgravity: Preliminary Ground-Based Experimental Results

A temperature-controlled pool boiling (TCPB) device was developed to perform pool boiling heat transfer studies at both normal gravity on Earth and microgravity in the drop tower Beijing and aboard a Chinese recovery satellite. Two platinum wires of 60 ?m in diameter were simultaneously used as heaters and thermometers. The lengths were 30 mm and 40 mm, respectively. The ends of wires were soldered with copper poles to provide low resistance paths for the electric current. The heater resistance, and thus the heater temperature, was kept constant by a feedback circuit similar to that used in constant-temperature hot-wire anemometry. The fluid was R113 at 0.1 Mpa and subcooled by 30 ?C nominally for all cases. The results of the experiments at normal gravity were presented. Four modes, namely single-phase convection, nucleate boiling, transition two-mode boiling, and film boiling were observed. A few data obtained from several preliminary experiments at microgravity in the drop tower Beijing were also presented. A slight increase of the heat flux was obtained.

Desenvolvimento de material compósito polimérico para utilização na confecção de troquéis

Na Odontologia, ao se confeccionar peças restauradoras dentárias, pela técnica indireta, o processo mais rotineiramente empregado utiliza um modelo de gesso, obtido a partir de um molde de elastômero, tomado de um dente preparado. Vários fatores podem influenciar na boa precisão de ajustes destas peças como o escoamento do material de vazamento dentro da moldagem, a compatibilidade do material de vazamento com o da moldagem, o tempo de presa, a estabilidade dimensional, a resistência mecânica do material quando da separação moldagem/modelo, a resistência a abrasão e a fidelidade de reprodução de detalhes. Materiais foram introduzidos na odontologia para utilização na confecção de troquéis no intuito de minimizar as desvantagens do gesso, como baixa resistência a abrasão e ligeira expansão de presa. Dentre eles os troquéis metalizados e as resinas epóxicas, que tem vantagens em relação às propriedades mecânicas, porém o primeiro exige técnica demorada e de alto custo e o segundo apresenta contração. O presente trabalho se propõe a testar uma nova composição de poliéster insaturado com estireno adicionado ao carbonato de cálcio em diferentes proporções (10, 20, 30, 40, 50, 60 e 70%) e compará-la ao gesso tipo IV e a resina epoxídica com óxido de alumínio, através de ensaios mecânicos, de abrasão e de alteração dimensional, para avaliar a possibilidade de sua utilização como material de confecção de troquéis para a construção de restaurações indiretas. Para caracterização dos materiais foram feitas análises de espectrometria no infravermelho, Calorimetria de varredura diferencial, termogravimétrica e Microscopia eletrônica de varredura. O compósito a base de poliéster insaturado com 50% de carbonato de cálcio se mostrou viável para utilização como material para troquel. Quando comparado aos materiais de controle mostrou propriedades mecânicas próximas as da resina epoxídica e bem superiores ao gesso, resistência a abrasão superior ao gesso e inferior a resina epoxídica e alteração dimensional próxima a resina epoxídica e maior ao gesso. Sendo a formulação do poliéster/carbonato de cálcio apenas constituída de polímero, catalisador e carga, é possível melhorar a formulação modificando a carga e/ou acrescentando aditivos visando minimizar a contração de polimerização.

A feasible approach to optical-electrical hybrid data storage using phase change material

We present our experimental results supporting optical-electrical hybrid data storage by optical recording and electrical reading using Ge2Sb2Te5as recording medium. The sheet resistance of laser- irradiated Ge2Sb2Te5. lms exhibits an abrupt change of four orders of magnitude ( from 10 7 to 10 3./ sq) with increasing laser power, current- voltage curves of the amorphous area and the laser- crystallized dots, measured by a conductive atomic force microscope ( C- AFM), show that their resistivities are 2.725 and 3.375 x 10- 3., respectively, the surface current distribution in the. lms also shows high and low resistance states. All these results suggest that the laser- recorded bit can be read electrically by measuring the change of electrical resistivity, thus making optical electrical hybrid data storage possible.

Comportamento dos aterros que compõem a obra do Arco Metropolitano do Rio de Janeiro.

O presente trabalho tem como objetivo a análise do comportamento dos aterros instrumentados que compõem a obra do Arco Metropolitano do Rio de Janeiro. Os resultados da instrumentação de campo serão discutidos e retroanalisados, juntamente com dados disponíveis na literatura, buscando-se a definição de parâmetros confiáveis, representativos do comportamento da argila compressível da região em estudo. O Arco Metropolitano do Rio de Janeiro é uma rodovia projetada que servirá como ligação entre as 5 principais rodovias que cortam o município do Rio de Janeiro. Dada a magnitude da obra e a ocorrência de significativas espessuras de solos moles em alguns trechos da região, determinados aterros que compõem a rodovia foram instrumentados com placas de recalque e inclinômetros, instalados em diferentes estações de monitoramento, no intuito de avaliar os deslocamentos verticais e horizontais dos aterros durante o processo construtivo. De posse de parâmetros confiáveis, procede-se à simulação numérica do processo construtivo de um dos aterros, a partir do programa PLAXIS, de elementos finitos. Os resultados numéricos são confrontados com a instrumentação de campo (fornecida por placas de recalque) e com os resultados de previsões teóricas (teoria de adensamento unidimensional). Em projetos de aterros sobre solos compressíveis, a instrumentação geotécnica é de grande importância, pois permite acompanhar o desenvolvimento de todo o processo construtivo, e as deformações decorrentes da sobrecarga imposta pelo lançamento de camadas de aterro. A imposição de um carregamento sobre solos de alta compressibilidade e baixa resistência pode acarretar em grandes deformações ao longo do tempo, além de rupturas indesejáveis do solo de fundação. Os resultados comprovaram que a modelagem numérica mostrou-se uma ferramenta adequada para a previsão dos recalques totais e tempos de adensamento. A definição de parâmetros representativos, com base em ensaios executados em amostras de boa qualidade, é o primeiro passo para a previsão coerente da evolução dos recalques com o tempo. A retroanálise do comportamento de aterros sobre solos moles permite a reavaliação das premissas de projeto, uma vez que as limitações das teorias de análise e a dificuldade na seleção de parâmetros, muitas vezes acarretam em estimativas de recalque incoerentes com as observações de campo.

O amor no spinozismo e a política do comum

No plano de imanência de Spinoza, o amor é afeto expressivo de uma diferença que marca o trânsito a estados de maior perfeição ou realidade. A partir da compreensão do princípio de univocidade, a imanência se expressa na produção de diferenças. O amor de Deus serve como guia para a vida política conduzida pela razão. Não um Deus personalizado, mas como nome da potência (potentia). Se a multidão compreende adequadamente sua própria essência como direito ou potência natural de resistir à dominação e de se auto-organizar em liberdade, o amor surge como força vital de constituição do comum e leva à invenção de formas cada vez mais aperfeiçoadas de vida. A democracia emerge, por sua vez, como o mais natural dos regimes políticos, porque é o que mais convém com a natureza dos homens guiados pela razão. Assim, nas redes e nas ruas a multidão exercita a liberdade quando promove encontros alegres entre as singularidades que a compõem. Ao lado de um conhecimento adequado para a produção de graus maiores de liberdade, surge uma espécie de amor da multidão por sua própria essência ou potência, ou seja, a afirmação em si mesma da diferença, da abertura e da multiplicidade. Aqui, os afetos passivos que são promovidos pelas relações de dominação, como o medo, o ódio e a esperança, devem ceder lugar aos afetos ativos do amor à liberdade necessária para diferir-se. A alegria da multidão, enfim, deriva de sua potência ativa de criar formas de vida comum a partir da composição de singularidades múltiplas. No seio da produção biopolítica contemporânea, surgem novos horizontes para o combate de resistência e criação conjunta contra as formas de vida submetidas à servidão. Seguindo principalmente a linhagem spinozista de Antonio Negri e Gilles Deleuze, explora-se aqui as condições da experiência real que determinam a possibilidade de uma ética política do amor na contemporaneidade.

Standard cell automated layout for a CMOS 50 MHz 8 × 8 bit pipelined parallel dadda multiplier

An 8 × 8 pipelined parallel multiplier which uses the Dadda scheme is presented. The multiplier has been implemented in a 3-μm n-well CMOS process with two layers of metal using a standard cell automatic placement and routing program. The design uses a form of pipelined carry look-ahead adder in the final stage of summation, thus providing a significant contribution to the high performance of the multiplier. The design is expected to operate at a clock frequency of at least 50 MHz and has a flush time of seven clock cycles. The design illustrates a possible method of implementing an irregular architecture in VLSI using multiple levels of low-resistance, low-capacitance interconnect and automated layout techniques.

Compact three-dimensional silicon termination solutions for high voltage SOI SuperJunction

This paper demonstrates and discusses novel "three dimensional" silicon based junction isolation/termination solutions suitable for high density ultra-low-resistance Lateral Super-Junction structures. The proposed designs are both compact and effective in safely distributing the electrostatic potential away from the active device area. The designs are based on the utilization of existing layers in the device fabrication line, hence resulting in no extra complexity or cost increase. The study/demonstration is done through extensive experimental measurements and numerical simulations. © 2012 IEEE.

Carbon nanotube growth for through silicon via application.

Through silicon via (TSV) technology is key for next generation three-dimensional integrated circuits, and carbon nanotubes (CNT) provide a promising alternative to metal for filling the TSV. Three catalyst preparation methods for achieving CNT growth from the bottom of the TSV are investigated. Compared with sputtering and evaporation, catalyst deposition using dip-coating in a FeCl2 solution is found to be a more efficient method for realizing a bottom-up filling of the TSV (aspect ratio 5 or 10) with CNT. The CNT bundles grown in 5 min exceed the 50 μm length of the TSV and are multi-wall CNT with three to eight walls. The CNT bundles inside the TSV were electrically characterized by creating a direct contact using a four-point nanoprober setup. A low resistance of the CNT bundle of 69.7 Ω (297 Ω) was measured when the CNT bundle was contacted midway along (over the full length of) the 25 μm deep TSV. The electrical characterization in combination with the good filling of the TSV demonstrates the potential use of CNT in fully integrated TSV applications.

Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5 nm/5 nm) film deposition. The surface morphology of wafers and the current-voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes

Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property

As-grown Fe-doped semi-insulating InP single crystal has been converted into n-type low-resistance material after high temperature annealing. Defects in the InP materials have been studied by conventional Hall effect measurement, thermally stimulated current spectroscopy, deep level transient spectroscopy and X-ray diffraction respectively. The results indicate that Fe atoms in the InP material change from the substitutional to the interstitial sites under thermal activation. Consequently, the InP material loses its deep compensation centers which results in the change in types of conduction. The mechanism and cause of the phenomena have been analyzed through comparison of the sites of Fe atom occupation and activation in doping, diffusion and ion implantation processes of InP.

Microstructure studies of PdGe/Ge ohmic contacts to n-type GaAs formed by rapid thermal annealing

A low resistance and shallow ohmic contact to n-GaAs is performed by using Ge/Pd/GaAs trilayer structure and rapid thermal annealing process. The dependence of specific contact resistivity on the temperature of rapid thermal annealing is investigated. A good ohmic contact is formed after annealing at 400-500 degrees C for 60 s. The best specific contact resistivity is 1.4 x 10(-6) Omega cm(2). Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM) are used to analyze the interfacial microstructure. A strong correlation between the contact resistance and the film microstructure is observed.

A new structure of In-based ohmic contacts to n-type GaAs

Electrical, structural and reaction characteristics of In-based ohmic contacts to n-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated by e-beam sputtering Ni, NiIn and Ge targets on VPE-grown n(+)-GaAs film (approximate to 1 mu m, 2 x 10(18) cm(-3)) in ultrahigh vacuum as the structure of Ni(200 Angstrom)/NiIn(100 Angstrom)/Ge(40 Angstrom)/n(+)-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500-900 degrees C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3In. The lowest specific contact resistivity (rho(c)) of (1.5 +/- 0.5)x 10(-6) cm(2) measured by the Transmission Line Method (TLM) was obtained after annealing at 700 degrees C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, InxGa1-xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.

不锈钢激光搭接焊接头温度场数值模拟及分析

温度场是影响激光焊接焊缝成形质量的关键因素. 针对非熔透型激光搭接焊接头焊缝成"钉头"状的特点,通过分析焊接时材料吸收激光能量的分布情况,提出了高斯面热源加线性递增式柱热源的复合体热源模型. 模型考虑板间接触热阻的影响,并将计算结果和试验结果进行了对比,发现模拟出的焊缝形状和试验吻合较好;此外基于本模型对焊缝各处的热循环与焊缝组织形貌及显微硬度的关系进行了分析. 结果表明,焊缝组织形貌及显微硬度除与加热和冷却速率有关外,峰值温度对其也有重要影响;在热循环基本一致的情况下焊缝的性能相似. 该模型较准确地模拟了薄板激光深熔焊接熔池温度场,对研究激光深熔焊接温度场问题和激光工艺参数的优化选择具有参考价值

Short columns with molecularly imprinted monolithic stationary phases for rapid separation of diastereomers and enantiomers

Three molecularly imprinted monolithic columns with different length but almost identical column volume had been prepared. It was observed that the separation factors of diastereomers and enantiomers were almost unaffected by column length. However, the short column with dimension of 38 mm x 8 mm W. showed much lower resistance to flow rate so that it could be operated at much higher flow rates. By combining stepwise gradient elution with elevated flow rate, the diastereomers of cinchonine and cinchonidine and the enantiomers of Cbz-DL-Trp and Fmoc-DL-Trp were successfully separated within 3 min on the short column with dimension of 38 mm. x 8 mm i.d.. Based on the above results, a cinchonine imprinted monolithic disk with dimension of 10 mm x 16 mm W. was further developed. The SEM image and the pore size distribution profile showed that large flow-through pores are present on the prepared monolith, which allowed mobile phase to flow through the disk with very low resistance. Chromatographic performances on the monolithic disk were almost unchanged compared with the long columns. A rapid separation of cinchonine and cinchonidine was achieved in 2.5 min at the flow rate of 9.0 ml/min. Furthermore, it was observed that there was almost no effect of the flow rate on the dynamic binding capacity at high flow rates. In addition, the effect of the loading concentration of analytes on the dynamic binding capacity, namely adsorption isotherm, was also investigated. A non-linear adsorption isotherm of cinchonine was observed on the molecularly imprinted monolith with cinchonine as template, which might be a main reason to result in the peak tailing of template molecule. (C) 2004 Elsevier B.V. All rights reserved.