Observation of field-driven blue shift in delta-doped Si n-i-p-i multiple quantum wells

We report the observation of the field-driven blue shift at near absorption edge in the photo-current response spectra of delta-doped Si n-i-p-i multiple quantum wells due to the widening of the effective energy gap. This phenomenon differs from the observed results in GaAs/AlGaAs and GeSi/Si superlattices, because the physical mechanisms of forming energy band in these superlattice samples are different. Our experimental results are interpreted satisfactorily by the theoretical calculation. (C) 1999 Elsevier Science Ltd. All rights reserved.

Radiative transition in delta-doped GaAs superlattices

Radiative transition in delta-doped GaAs superlattices with a weak coupling was investigted at low temperature, The experimental results show that the transitions from both electron ground state and excited state to hole state have been observed, Based on the effective mass approximation theory, the structures of energy band and photoluminescence spectra for the samples used were calculated. Comparing the experiment with theory, a good agreement was abtained.

Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance-voltage profiling and deep-level transient spectroscopy techniques

The conduction-band offset Delta E-C has been determined for a molecular beam epitaxy grown GaAs/In0.2Ga0.8As single quantum-well structure, by measuring the capacitance-voltage (C - V) profiling, taking into account a correction for the interface charge density, and the capacitance transient resulting from thermal emission of carriers from the quantum well, respectively. We found that Delta E-C = 0.227 eV, corresponding to about 89% Delta E-g, from the C - V profiling; and Delta E-C = 0.229eV, corresponding to about 89.9% Delta E-g, from the deep-level transient spectroscopy (DLTS) technique. The results suggest that the conduction-band discontinuity Delta E-C obtained from the C-V profiling is in good agreement with that obtained from the DLTS technique. (C) 1998 American Institute of Physics.

Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) at the GaN/Ge heterostructure interface. The VBO is directly determined to be 1.13 +/- 0.19 eV, according to the relationship between the conduction band offset Delta E-C and the valence band offset Delta E-V : Delta E-C = E-g(GaN) - E-g(Ge) - Delta E-V, and taking the room-temperature band-gaps as 3.4 and 0.67 eV for GaN and Ge, respectively. The conduction band offset is deduced to be 1.6 +/- 0.19 eV, which indicates a type-I band alignment for GaN/Ge. Accurate determination of the valence and conduction band offsets is important for the use of GaN/Ge based devices.

Optical properties of delta-doped GaAs and GaAs/Al0.1Ga0.9As superlattices

Radiative transition in delta-doped GaAs superlattices with and without Al0.1Ga0.9As barriers is investigated by using photoluminescence at low temperatures. The experimental results show that the transition mechanism of delta-doped superlattices is very different from that of ordinary superlattices. Emission intensity of the transition from the electron first excited state to hole states is obviously stronger than that from the electron ground state to hole states due to larger overlap integral between wavefunctions of electrons in the first excited state and hole states. Based on the effective mass theory we have calculated the self-consistent potentials, optical transition matrix elements and photoluminescence spectra for two different samples. By using this model we can explain the main optical characteristics measured. Moreover, after taking into account the bandgap renormalization energy, good agreement between experiment and theory is obtained.

Band properties of the transitional nucleus Pt-189

High-spin states in Pt-189 have been studied with the in-beam gamma-spectroscopy method via the Yb-176(O-18, 5n) reaction at beam energies of 88 MeV and 95 MeV. A new level scheme of Pt-189 has been established. Rotational bands based on the upsilon i(13/2)(-1), upsilon f(5/2)(p(3/2)) and upsilon i(13/2)(-2)upsilon f(p(3/2)) configurations, as well as several structures with irregular level spacings, have been observed. Properties of rotational bands have been analyzed in the framework of triaxial particle-rotor model. A gamma similar to -30 degrees triaxial shape and a near prolate shape have been proposed to the upsilon i(13/2)(-1) and uf(5/2)(p(3/2)) bands, respectively. Two Delta I=2 transition sequences with similar energies have been observed, and they have been proposed to be associated with the upsilon i(13/2)(-1)upsilon f(5/2)(p(3/2)) configuration. According to the relevant Nilsson orbitals, the bands built on the upsilon i(13/2)(-1)upsilon f(5/2)(p(3/2)) configuration could be interpreted as a pair of pseudo-spin partner.

High-spin states and collective band structures in the odd-odd Pm-140 nucleus

The high-spin states of Pm-140 have been investigated through the reaction Te-126(F-19, 5n) at a beam energy of 90 MeV. A previous level scheme based on the 8(-) isomer has been updated with spin up to 23 (h) over bar. A total of 22 new levels and 41 new transitions were identified. Six collective bands were observed. Five of them were expanded or re-constructed, and one of them was newly identified. The systematic signature splitting and inversion of the yrast pi h(11/2)circle times vh(11/2) band in Pr and Pm odd-odd isotopes has been discussed. Based on the systematic comparison, two Delta I = 2 bands were proposed as double-decoupled bands; other two bands with strong Delta I = 1 M1 transitions inside the bands were suggested as oblate bands with gamma similar to -60 degrees; another band with large signature splitting has been proposed with oblate-triaxial deformation with gamma similar to -90 degrees. The characteristics for these bands have been discussed.

Probing Bias-Dependent Electrochemical Gas-Solid Reactions in (LaxSr1-x)CoO3-delta Cathode Materials

Spatial variability of bias-dependent electrochemical processes on a (La0.5Sr0.5)(2)CoO4 +/- modified (LaxSr1-x)CoO3- surface is studied using first-order reversal curve method in electrochemical strain microscopy (ESM). The oxygen reduction/evolution reaction (ORR/OER) is activated at voltages as low as 3-4 V with respect to bottom electrode. The degree of bias-induced transformation as quantified by ESM hysteresis loop area increases with applied bias. The variability of electrochemical activity is explored using correlation analysis and the ORR/OER is shown to be activated in grains at relatively low biases, but the final reaction rate is relatively small. At the same time, at grain boundaries, the onset of reaction process corresponds to larger voltages, but limiting reactivity is much higher. The reaction mechanism in ESM of mixed electronic-ionic conductor is further analyzed. These studies both establish the framework for probing bias-dependent electrochemical processes in solids and demonstrate rich spectrum of electrochemical transformations underpinning catalytic activity in cobaltites.

Polyphase Implementation of Non-recursive Comb Decimators for Sigma-Delta A/D Converters

In a sigma-delta analog to digital (A/D) As most of the sigma-delta ADC applications require converter, the most computationally intensive block is decimation filters with linear phase characteristics, the decimation filter and its hardware implementation symmetric Finite Impulse Response (FIR) filters are may require millions of transistors. Since these widely used for implementation. But the number of FIR converters are now targeted for a portable application, filter coefficients will be quite large for implementing a a hardware efficient design is an implicit requirement. narrow band decimation filter. Implementing decimation In this effect, this paper presents a computationally filter in several stages reduces the total number of filter efficient polyphase implementation of non-recursive coefficients, and hence reduces the hardware complexity cascaded integrator comb (CIC) decimators for and power consumption [2]. Sigma-Delta Converters (SDCs). The SDCs are The first stage of decimation filter can be operating at high oversampling frequencies and hence implemented very efficiently using a cascade of integrators require large sampling rate conversions. The filtering and comb filters which do not require multiplication or and rate reduction are performed in several stages to coefficient storage. The remaining filtering is performed reduce hardware complexity and power dissipation. either in single stage or in two stages with more complex The CIC filters are widely adopted as the first stage of FIR or infinite impulse response (IIR) filters according to decimation due to its multiplier free structure. In this the requirements. The amount of passband aliasing or research, the performance of polyphase structure is imaging error can be brought within prescribed bounds by compared with the CICs using recursive and increasing the number of stages in the CIC filter. The non-recursive algorithms in terms of power, speed and width of the passband and the frequency characteristics area. This polyphase implementation offers high speed outside the passband are severely limited. So, CIC filters operation and low power consumption. The polyphase are used to make the transition between high and low implementation of 4th order CIC filter with a sampling rates. Conventional filters operating at low decimation factor of '64' and input word length of sampling rate are used to attain the required transition '4-bits' offers about 70% and 37% of power saving bandwidth and stopband attenuation. compared to the corresponding recursive and Several papers are available in literature that deals non-recursive implementations respectively. The same with different implementations of decimation filter polyphase CIC filter can operate about 7 times faster architecture for sigma-delta ADCs. Hogenauer has than the recursive and about 3.7 times faster than the described the design procedures for decimation and non-recursive CIC filters.

Wideband Low-Distortion Sigma-Delta ADC for WLAN

This work presents a wideband low-distortion sigmadelta analog-to-digital converter (ADC) for Wireless Local Area Network (WLAN) standard. The proposed converter makes use of low-distortion swing suppression SDM architecture which is highly suitable for low oversampling ratios to attain high linearity over a wide bandwidth. The modulator employs a 2-2 cascaded sigma-delta modulator with feedforward path with a single-bit quantizer in the first stage and 4-bit in the second stage. The modulator is designed in TSMC 0.18um CMOS technology and operates at 1.8V supply voltage. Simulation results show that, a peak SNDR of 57dB and a spurious free dynamic range (SFDR) of 66dB is obtained for a 10MHz signal bandwidth, and an oversampling ratio of 8.

A Multi-Mode Sigma-Delta ADC for GSM/WCDMA/ WLAN Applications

The demand for new telecommunication services requiring higher capacities, data rates and different operating modes have motivated the development of new generation multi-standard wireless transceivers. In multistandard design, sigma-delta based ADC is one of the most popular choices. To this end, in this paper we present cascaded 2-2-2 reconfigurable sigma-delta modulator that can handle GSM, WCDMA and WLAN standards. The modulator makes use of a low-distortion swing suppression topology which is highly suitable for wide band applications. In GSM mode, only the first stage (2nd order Σ-Δ ADC) is used to achieve a peak SNDR of 88dB with oversampling ratio of 160 for a bandwidth of 200KHz and for WCDMA mode a 2-2 cascaded structure (4th order) is turned on with 1-bit in the first stage and 2-bit in the second stage to achieve 74 dB peak SNDR with over-sampling ratio of 16 for a bandwidth of 2MHz. Finally, a 2-2-2 cascaded MASH architecture with 4-bit in the last stage is proposed to achieve a peak SNDR of 58dB for WLAN for a bandwidth of 20MHz. The novelty lies in the fact that unused blocks of second and third stages can be made inactive to achieve low power consumption. The modulator is designed in TSMC 0.18um CMOS technology and operates at 1.8 supply voltage

A Triple-mode Sigma-delta Modulator Design for Wireless Standards

This work presents a triple-mode sigma-delta modulator for three wireless standards namely GSM/WCDMA and Bluetooth. A reconfigurable ADC has been used to meet the wide bandwidth and high dynamic range requirements of the multi-standard receivers with less power consumption. A highly linear sigma-delta ADC which has reduced sensitivity to circuit imperfections has been chosen in our design. This is particularly suitable for wide band applications where the oversampling ratio is low. Simulation results indicate that the modulator achieves a peak SNDR of 84/68/68 dB over a bandwidth of 0.2/3.84/1.5 MHz with an oversampling ratio 128/8/8 in GSM/WCDMA/Bluetooth modes respectively

A Triple-Mode Feed-Forward Sigma-Delta Modulator Design For Gsm / Wcdma / Wlan Applications

This paper presents a cascaded 2-2-2 reconfigurable sigma-delta modulator that can handle GSM, WCDMA and WLAN standards. The modulator makes use of a low-distortion swing suppression topology which is highly suitable for wide band applications. In GSM mode, only the first stage (2nd order Σ-Δ ADC) is turned on to achieve 88dB dynamic range with oversampling ratio of 160 for a bandwidth of 200KHz; in WCDMA mode a 2-2 cascaded structure (4th order) is turned on with 1-bit in the first stage and 2-bit in the second stage to achieve 74 dB dynamic range with oversampling ratio of 16 for a bandwidth of 2MHz and a 2-2-2 cascaded MASH architecture with a 4-bit in the last stage to achieve a dynamic range of 58dB for a bandwidth of 20MHz. The novelty lies in the fact that unused blocks of second and third stages can be switched off taking into considerations like power consumption. The modulator is designed in TSMC 0.18um CMOS technology and operates at 1.8 supply voltage.

Compositional control of the electrical transport properties in the new series of thiospinels Ga1-xGexV4S8-delta (0 <=x<=1)

A new series of non-stoichiometric sulfides Ga1−xGexV4S8−δ (0≤x≤1; δ≤0.23) has been synthesized at high temperatures by heating stoichiometric mixtures of the elements in sealed quartz tubes. The samples have been characterized by powder X-ray diffraction, SQUID magnetometry and electrical transport-property measurements. Structural analysis reveals that a solid solution is formed throughout this composition range, whilst thermogravimetric data reveal sulfur deficiency of up to 2.9% in the quaternary phases. Magnetic measurements suggest that the ferromagnetic behavior of the end-member phase GaV4S8 is retained at x≤0.7; samples in this composition range showing a marked increase in magnetization at low temperatures. By contrast Ga0.25Ge0.75V4S8−δ appears to undergo antiferromagnetic ordering at ca. 15 K. All materials with x≠1 are n-type semiconductors whose resistivity falls by almost six orders of magnitude with decreasing Ga content, whilst the end-member phase GeV4S8−δ is a p-type semiconductor. The results demonstrate that the physical properties are determined principally by the degree of electron filling of narrow-band states arising from intracluster V–V interactions.

A two band model for superconductivity: probing interband pair formation

We propose a two band model for superconductivity. It turns out that the simplest nontrivial case considers solely interband scattering, and both bands can be modeled as symmetric (around the Fermi level) and flat, thus each band is completely characterized by its half-band width Wn (n=1,2). A useful dimensionless parameter is d, proportional to W2 - W1. The case delta = 0 retrieves the conventional BCS model. We probe the specific heat, the ratio gap over critical temperature, the thermodynamic critical field and tunneling conductance as functions of d and temperature (from zero to Tc). We compare our results with experimental results for MgB2 and good quantitative agreement is obtained, indicating the relevance of interband coupling. Work in progress also considers the inclusion of band hybridization and general interband as well as intra-band scattering mechanisms.