WANNIER LOCALIZATION IN GAAS/GAALAS SUPERLATTICES UNDER ELECTRIC-FIELD

We have studied the Wannier-Stark effect in GaAs/GaAlAs short-period superlattices under applied electric field perpendicular to the layers by room- and low-temperature photocurrent measurements. The changes in the transition intensities with biasing are well fitted to a theoretical calculation based on the finite Kronig-Penney model on which the potential of an applied electric field is superposed. With increasing electric field, the 0h peak grows to a maximum while the -1h and +1h peaks monotonousely decrease. By a comparison of the spectra measured at different temperatures, the two peaks in the room temperature photocurrent spectra at relatively low electric field (1.0 X 10(4) V/cm) are identified to be caused by the Wannier localization effect instead of saddle-point excitons.

NEW TYPE OF SILICON MATERIAL WITH VERY HIGH-QUALITY SURFACE-LAYER ON INSULATING DEFECT LAYER

A new-type silicon material, silicon on defect layer (SODL) was proved to have a very high quality surface microstructure which is necessary for commercially feasible high-density very large scale integrated circuits (VLSI). The structure of the SODL material was viewed by transmission electron microscopy. The SODL material was also proved to have a buried defect layer with an insulating resistivity of 5.7 x 10(10) OMEGA-cm.

PHOTOLUMINESCENCE STUDIES OF INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS UNDER HYDROSTATIC-PRESSURE

The photoluminescence from InxG1-xAs/GaAs strained quantum wells with thickness from 30 to 160 angstrom have been studied at 77 K under hydrostatic pressure up to 60 kbar. It was found that the pressure coefficients of the exciton peaks corresponding to transitions from the first conduction subband to the heavy-hole subband increased with reduced well width, in contrast to the case of GaAs/AlxGa1-xAs quantum wells. Calculations revealed that the increased barrier height with pressure was the major cause of the change in the pressure coefficients. Two peaks related to indirect transitions were observed at pressures higher than 50 kbar. They are attributed to type-I transitions from the lowest conduction-band edge, which are the strain splitted X(xy) valleys, to the heavy-hole subband in the InxGa1-xAs well.

QUANTUM WAVE-GUIDE THEORY FOR MESOSCOPIC STRUCTURES

A one-dimensional quantum waveguide theory for mesoscopic structures is proposed, and the boundary conditions of the wave functions at an intersection are given. The Aharonov-Bohm effect is quantitatively discussed with use of this theory, and the reflection, transmission amplitudes, etc., are given as functions of the magnetic flux, the arm lengths, and the wave vector. It is found that the oscillating current consists of a significant component of the second harmonic. This theory is also applied to investigate quantum-interference devices. The results on the Aharonov-Bohm effect and the quantum-interference devices are found to be in agreement with previous theoretical results.

光电子学与光电子产业专题系列介绍-量子阱电光调制器和光开关

于2010-11-23批量导入

半导体激光器中电场分布特性的连续波电光检测

国家自然科学基金

a-Si:H中光致亚稳变化与载流子复合

于2010-11-23批量导入

浑河上游森林变化及其对流域水文的影响

本文以浑河上游流域为研究对象，运用35技术结合野外调查，对研究区1986，1992和2001年三个时段的森林变化及流域出口断面的水文响应进行了研究。研究内容包括研究区近期森林的数量、质量和空间分布状况：研究区森林在各个时段之间变化的数量和具体方式；研究时段内，流域出口断面主要水文要素的变化与定量表达。研究结论将加深人们对该森林流域在上世纪末森林植被变化历程的了解，促进区域生态建设和恢复研究，以实现流域的生态安全。主要结论：1）现阶段研究区森林面积1.57*10~5hm2，森林覆被率达67.04％。森林以阔叶林为主，面积占森林总面积的69.46％，其次是落叶松林，常绿林只占3.17���；对森林质量评价发现研究区森林整体属于良；3）森林的面积权重随海拔增加而增加，森林在研究区平均海拔以下的面积权重是55．52％，平均海拔以上的面积权重是79.64％，差异显著。2）十五年间森林净增加1．8X10'hm，，在1986-1992年间，森林增加0.7*104hm2，1992-2001年间，森林增加1.1*104hm2，两个时期森林变化的速度接近，但变化模式并不相同；根据随机模型模拟结果，按照近期恢复情况，研究区在2010年的覆被率有望达到70％03）森林变化对流域水文要素产生比较明显的影响。流域总蓄水量增加1.5*107t；通过构造径流和泥沙的响应指数发现，1996-2001年和1986-1991年比较，流域每毫米降水在出口断面上产生的径流量减少4.4*104m3，泥沙量减少36.3t。

近垒及垒下能区重离子熔合-裂变反应机制的研究

本工作用固体云母核径迹探测器测量了质心能量为73.7���93.4MeV的~(16)O + ~(238)U和能量为57.9至76.0MeV的~(12)C + ~(237)Np系统熔合裂变碎片角分布和截面；首次用双栅位置灵敏雪崩计数器[DGAC]测量了质心能量为46.5至56.2 MeV的~(11)B + ~(238)U和能量为58.9至76.0 MeV的~(12)C + ~(237)Np及84.0MeV的~(16)O + ~(238)U系统熔合裂变碎片角关联和截面。研究结果表明：使用二种测量方法得到的熔合裂变截面和裂变碎片角分布是一致的，对于三个反应系统熔合裂变截面用考虑靶核形变的耦合道理论能得到合理的描述；而从计算熔合截面中提取穿透系数，从有限力程转动液滴模型中提取有效转动惯量，用鞍点过渡态理论计算裂变碎片角分布，发现裂变碎片角分布各向异性异常；随入射能量减少，各向异性并不是单调地变化，而是呈现异常的“鼓包”；裂变碎片各向异性还有明显的入射道效应，在近垒和垒上能区~(12)C + ~(237)Np和~(11)B + ~(238)U系统裂变碎片角分布可以用鞍点过渡态理论描述，没有发现异常；而对于~(16)O + ~(238)U系统裂变碎片角分布都有大于理论的异常，而且在垒上低能端异性度随能量的变化走向不同于以前测量的结果。虽然入射道效应证明了前平衡裂变的理论预言，但对于垒下能区，碎片异性度的异常依然存在，表明仅用前平衡裂变理论解释裂变碎片角分布的异常是不够的。为了澄清转移裂变对角分布异常的贡献，采用了角关联技术成功地区分出复合核裂变和转移裂变，实现了对纯复合核裂变碎片角分布各向异性的研究。在被研究的能区内，转移裂变占总裂变截面10%以下，而且它的各向异性度比复合核裂变的要小，扣除转移裂变的贡献使裂变碎片异性度提高5%，因此角分布异常不可能起源于转移裂变的贡献

SEQUENCE STRUCTURE OF ETHYLENE-VINYL SUBSTITUTED COPOLYMER WITH C-13 NMR .4.

The substituent chemical shift (SCS) has been applied to the assignment of the C-13 NMR spectrum of chlorinated polyethylene (CPE). CPE of different chlorine contents has been employed and their sequence structure discussed. The results show that characteristic of CPE with medium chlorine content is the dichloroethane structure in molecular chain. SCS parameters have been obtained from the C-13 NMR spectra. It was found that the effects of chlorine content and temperature on SCS are negligible, but the substituent parameter S1 reduced by 0.39 ppm when C2Cl4 was added to solvent ODCB.

THE ANODIC-OXIDATION OF HYDRAZINE ON GLASSY-CARBON ELECTRODE

The anodic oxidation kinetics of hydrazine (N2H4) on glassy carbon (GC) electrode was examined by cyclic voltammetry, rotating disk and ring-disc electrode techniques. The possible mechanisms of N2H4 oxidation in both aqueous and nonaqueous solutions are proposed.