991 resultados para polymeric precursor method


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Photopolymerized sol-gel monolithic columns for use in capillary electrochromatography were prepared in 125 mu m i.d. polyacrylate-coated fused-silica capillaries. The polyacrylate-coating, unlike the polyimide one, is transparent to the radiation used (approximate to 370 nm), and thus, no coating removal is necessary. This is a very important particularity since intrinsic capillary column characteristics, such as flexibility and mechanical resistance, are unchanged. A mixture containing metacryloxypropyltrimethoxysilane (MPTMS) as the polymeric precursor, hydrochloric acid as the catalyst, toluene as the porogen and bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide (Irgacure 819) as the photoinitiator was irradiated at 370 nm for 20 min inside the capillaries to prepare the columns through sol-gel approach. The versatility and viability of the use of polyacrilate as a new capillary external coating were shown through preparation of two columns under different conditions, which were tested in electrochromatography for separation of standard mixture containing thiourea (marker compound), propylbenzene, phenanthrene and pyrene. (C) 2008 Elsevier B.V. All rights reserved.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Compostos da família La1-xSr xCr0,5Mn0,5O3 são apontados como potenciais anodos cerâmicos de células a combustível de óxidos sólidos. A utilização de anodos cerâmicos tem como objetivo eliminar os problemas de depósito de carbono na superfície do níquel e a baixa resistência a ciclos de redução/oxidação observados no compósito cerâmica-metal à base de zircônia estabilizada e níquel, que é o material anódico mais usado nestas células. Neste estudo são apresentados os resultados da síntese pela técnica dos precursores poliméricos e da caracterização de compostos com x = 0,5, estequiométrico e com 5% de deficiência catiônica no sítio A da estrutura perovskita La1-xSr xCr0,5Mn0,5O3 e (La1-xSr x)0,95Cr0,5Mn0,5O3, respectivamente. Os resultados evidenciam que o composto estudado possui altos valores de condutividade elétrica e baixa reatividade com eletrólitos à base de zircônia.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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SnO2 nanoparticles doped with TiO2, CoO, Nb2O3 and Al2O3 were obtained in this work using the methods of coprecipitation and polymeric precursor. X Ray Diffraction (XRD), and Scanning Electron Microscopy (SEM) were used to characterize the ceramic powders obtained. Their synterization capacity was determined by dilatometric studies. Sinterized samples of the system on study were also characterized electrically and microstructurally to determine their suitability as varistors.

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The PLZT powders with the formula Pb0.905La0.095(Zr0.65Ti0.35)(0.976)O-3+3.5 wt.% PbO were prepared by the organometallic precursor method (Pechini and partial oxalate processes). The microstructure of sintered 9.5/65/35 PLZT ceramics obtained from a partial oxalate procedure shows that the outstanding feature of this microstructure is its fairly uniform grains of about 1.8 mum. The microstructure of sintered PLZT ceramics obtained by the Pechini process consists of uniform small randomly- oriented grains tightly bonded together in the central part of the sample with,a grain size of about 1.2 mum. Cubic and elongated grains are formed at the sample's border. The microstructures of hot pressed PLZT ceramics obtained from both processes are dense and rather uniform. After a double stage of hot pressing (2 plus 20 h) the microstructure of PLZT is fully dense, uniform and homogeneous with a grain size of approximately 2.5 mum. (C) 2001 Elsevier B.V. Ltd. All rights reserved.

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Thin films of perovskite-type materials such as PbTiO3, BaTiO3, (Pb,La)TiO3, (Pb, La)(ZrTi)O-3, KNbO3, and Pb(Mg,Nb)03 have been attracting great interest for applications like non-volatile memories, ultrasonic sensors and optical devices. Thin film should be epitaxially grown or at least highly textured since the properties of this anisotropic material depend on the crystallographic orientation. For optical devices, in particular, an epitaxial thin film without defects are essential to reduce optical propagation losses. Pb1-xLaxTiO3 (PLT) where x=0, 13 and 27% thin films were prepared by a chemical method (polymeric precursors method), and deposited by the spin coating technique onto substrates of SrTiO3 (STO) and LaAlO3 (LAO). The films were then beat treated at 500 degrees C in a controlled atmosphere of 0,. The orientation degree of the thin films was obtained from rocking curve technique, by means of X-ray difftaction analysis. A microstructural study revealed that the films were crack-free, homogeneous and have low roughness. (c) 2006 Elsevier B.V. All rights reserved.

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Oriented LiNbO3 thin films were prepared using a polymeric precursor solution deposited on (0001) sapphire substrate by spin coating and crystallized in a microwave oven. Crystallization of the films was carried out in a domestic microwave oven. The influence of this type of heat treatment on the film orientation was analyzed by X-ray diffraction and electron channeling patterns, which revealed epitaxial growth of films crystallized at 550 and 650 degreesC for 10 min. A microstructural study indicated that the films treated at temperatures below 600 degreesC were homogeneous and dense, and the optical properties confirmed the good quality of these films. (C) 2003 Elsevier B.V. B.V. All rights reserved.

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SrBi2Nb2O9 (SBN) thin films were prepared by the polymeric precursors method and deposited by dip coating onto Pt/Ti/SiO2/Si(100) substrates. The dip-coated films were specular and crack-free and crystallized during firing at 700 degrees C. Microstructure and morphological evaluation were followed by grazing incident X-ray diffraction (GIXRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The films exhibited somewhat porous grain structure with rounded grains of about 100 nm. For the electrical measurements, gold electrodes of 300 mu m in diameter were sputter deposited on the top surface, forming a metal-ferroelectric-metal (MFM) configuration. The remanent polarization (P-r) and coercive field (E-c) were 5.6 mu C/cm(2) and 100 kV/cm, respectively. (C) 1999 Elsevier B.V. B.V. All rights reserved.

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Tin oxide, SnO2. is a very used compound in industry and one of its uses is as varistor. For the current requirements of the technology is necessary a strict control of the chemical purity and the particle size of the raw material; for that reason the great interest that exists at the moment to develop synthesis methods that allow to get these requirements. In this work, ceramic powders of the Sn-Co-Nb-Ti-Al system using the controlled precipitation and polymeric precursor (Pechini) methods were synthesized. The raw material obtained was characterized using X-ray diffraction (XRD), thermal analysis (DTA/FG) and scanning electron microscopy (SEM). The sintering samples shown a good varistor behavior with non-linear coefficient (alpha) values similar to 22, and Er 2083 V/cm(2). (c) 2007 Elsevier Ltd. All rights reserved.

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Ferroelectric SrBi2Nb2O9 (SBN) thin films were prepared by the polymeric precursors method and deposited by spin coating onto Pt/Ti/SiO2/Si substrate and crystallized using a domestic microwave oven. It was studied the influence of the heat flux direction and the duration of the thermal treatment on the films crystallization. An element with high dielectric loss, a SiC susceptor, was used to absorb the microwave energy and transfers the heat to the film. Influence of the susceptor position to the sample crystallization was verified, the susceptor was, placed or below the substrate or above the film. The SBN perovskite phase was observed after a thermal treatment at 700 degreesC for 10 min when the susceptor was placed below the substrate and for 30 min when the susceptor was placed above the film. Electrical measurements revealed that the film crystallized at 700 degreesC for 10 min, with the susceptor placed below the film, presented dielectric constant, dielectric loss, remanent polarization and coercive field of, 67, 0.011, 4.2 muC/cm(2) and 27.5 kV/cm, respectively. When the films were crystallized at 700 degreesC for 30 min, with the susceptor placed above the film, the dielectric constant was 115 and the dissipation factor was around of 0.033, remanent polarization and coercive field were 10.8 muC/cm(2) and 170 kV/cm, respectively. (C) 2003 Elsevier B.V. All rights reserved.

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Pure and W-doped PZT ceramics (PZT and PZTW) were prepared by a hybrid process consisting in the association of polymeric precursor and partial oxalate methods. The phase formation was investigated by simultaneous thermal analysis (TG/DSC) and X-ray diffraction (XRD). The effect of W doping PZT and their electrical properties was evaluated. Substitution of W by Ti leads to an increase of Curie temperature and broadening of dielectric constant. A typical hysteresis loop was observed at room temperature and the remnant polarization was increased with the content of W. (c) 2007 Elsevier B.V. All rights reserved.

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The effect of heating rate on the sintering of agglomerated NaNbO3 powders, processed by the polymeric precursors method, was studied. The results showed that the presence of agglomerated powder leads to a heterogeneous microstructure, with bimodal grain size distribution, after sintering. Using a high heating rate, the sintering of agglomerated particles was inhibits, leading to a homogeneous microstructure, with single grain size distribution. (C) 1998 Kluwer Academic Publishers.

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Ultra-fine powders of Na1-xLixNbO3 (x=0; 0.06; 0.09; 0.12) were synthesized by the Polymeric Precursors Method. Such powders had their orthorhombic structures determined by X-ray diffraction and their surface area determined by BET isotherms (less than 10 m(2) g(-1)). Densification was followed by dilatometric study. The powders, calcined at 700 degrees C for 5 h, were sintered at 1290 degrees C during 2 h under ambient atmosphere with no application of extra pressure. The samples with relative densities higher than 95% were analyzed by impedance spectroscopy at room temperature, under a signal amplitude of 1 V-rms. Dielectric constants of about 180 and dielectric loss factor of about 0.03 were measured showing small dependence with frequency. The electrical properties were similar to those obtained for samples sintered by hot pressing. (C) 1999 Elsevier B.V. Limited and Techna S.r.l. All rights reserved.