Chemical bonding and composition of silicon nitride films prepared by inductively coupled plasma chemical vapor deposition

Thin silicon nitride films were prepared at 350 degrees C by inductively coupled plasma chemical vapor deposition on Si(100) substrates under different NH(3)/SiH(4) or N(2)/SiH(4) gas mixture. The chemical composition and bonding structure of the deposited films were investigated as a function of the process parameters, such as the gas flow ratio NH(3)/SiH(4) or N(2)/SiH(4) and the RF power, using X-ray photoelectron spectroscopy (XPS). The gas flow ratio was 1.4, 4.3, 7.2 or 9.5 and the RF power, 50 or 100 W. Decomposition results of Si 2p XPS spectra indicated the presence of bulk Si, under-stoichiometric nitride, stoichiometric nitride Si(3)N(4), oxynitride SiN(x)O(y), and stoichiometric oxide SiO(2), and the amounts of these compounds were strongly influenced by the two process parameters. These results were consistent with those obtained from N 1s XPS spectra. The chemical composition ratio N/Si in the film increased with increasing the gas flow ratio until the gas flow ratio reached 4.3, reflecting the high reactivity of nitrogen, and stayed almost constant for further increase in gas flow ratio, the excess nitrogen being rejected from the growing film. A considerable and unexpected incorporation of contaminant oxygen and carbon into the depositing film was observed and attributed to their high chemical reactivity. (C) 2010 Elsevier B.V. All rights reserved.

Oxygen-mediated electron transport through hybrid silicon-organic interfaces

We investigate from first principles the electronic and transport properties of hybrid organic/silicon interfaces of relevance to molecular electronics. We focus on conjugated molecules bonded to hydrogenated Si through hydroxyl or thiol groups. The electronic structure of the systems is addressed within density functional theory, and the electron transport across the interface is directly evaluated within the Landauer approach. The microscopic effects of molecule-substrate bonding on the transport efficiency are explicitly analyzed, and the oxygen-bonded interface is identified as a candidate system when preferential hole transfer is needed.

Confinement and surface effects in B and P doping of silicon nanowires

Several experimental groups have achieved effective n- and p-type doping of silicon nanowires (SiNWs). However, theoretical analyses on ultrathin SiNWs suggest that dopants tend to segregate to their surfaces, where they would combine with defects such as dangling bonds (DB), becoming electronically inactive. Using fully ab initio calculations, we show that the differences in formation energies among surface and core substitutional sites decrease rapidly as the diameters of the wires increase, indicating that the dopants will be uniformly distributed. Moreover, occurrence of the electronically inactive impurity/DB complex rapidly becomes less frequent for NWs of larger diameters. We also show that the high confinement in the ultrathin SiNWs causes the impurity levels to be deeper than in the silicon bulk, but our results indicate that for NWs of diameters larger than approximately 3 nm the impurity levels recover bulk characteristics. Finally, we show that different surfaces will lead to different dopant properties in the gap.

Energy States of Phosphorous Donor in Silicon in Fields up to 18 T

The evolution of the energy states of the phosphorous donor in silicon with magnetic field has been the subject of previous experimental and theoretical studies to fields of 10 T. We now present experimental optical absorption data to 18 T in combination with theoretical data to the same field. We observe features that are not revealed in the earlier work, including additional interactions and anti-crossings between the different final states. For example, according to the theory, for the ""1s -> 2p (+)"" transition, there are anti-crossings at about 5, 10, 14, 16, and 18 T. In the experiments, we resolve at least the 5, 10, and 14 T anti-crossings, and our data at 16 and 18 T are consistent with the calculations.

Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films

The need of efficient (fast and low consumption) optoelectronic devices has always been the driving force behind the investigation of materials with new or improved properties. To be commercially attractive, however, these materials should be compatible with our current micro-electronics industry and/or telecommunications system. Silicon-based compounds, with their matured processing technology and natural abundance, partially comply with such requirements-as long as they emit light. Motivated by these issues, this work reports on the optical properties of amorphous Si films doped with Fe. The films were prepared by sputtering a Si+Fe target and were investigated by different spectroscopic techniques. According to the experimental results, both the Fe concentration and the thermal annealing of the samples induce changes in their atomic structure and optical-electronic properties. In fact, after thermal annealing at similar to 750 degrees C, the samples partially crystallize with the development of Si and/or beta-FeSi(2) crystallites. In such a case, certain samples present light emission at similar to 1500 nm that depends on the presence of beta-FeSi(2) crystallites and is very sensitive to the annealing conditions. The most likely reasons for the light emission (or absence of it) in the considered Fe-doped Si samples are presented and discussed in view of their main structural-electronic characteristics. (C) 2011 Elsevier Ltd. All rights reserved.

Fano resonance in heavily doped porous silicon

Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si-SiO(2) interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined. Copyright (C) 2011 John Wiley & Sons, Ltd.

Bond Strength and Etching Pattern of Adhesive Systems to Enamel: Effects of Conditioning Time and Enamel Preparation

Statement of the problem: The performance of self-etch systems on enamel is controversial and seems to be dependent on the application technique and the enamel preparation. Purpose of the Study: To examine the effects of conditioning time and enamel surface preparation on bond strength and etching pattern of adhesive systems to enamel. Materials and Methods: Ninety-six teeth were divided into 16 conditions (N = 6) in function of enamel preparation and conditioning time for bond strength test. The adhesive systems OptiBond FL (Kerr, Orange, CA, USA), OptiBond SOLO Plus (Kerr), Clearfil SE Bond (Kuraray, Osaka, Japan), and Adper Prompt L-Pop (3M ESPE, St. Paul, MN, USA) were applied on unground or ground enamel following the manufacturers` directions or doubling the conditioning time. Cylinders of Filtek Flow (0.5-mm height) were applied to each bonded enamel surface using a Tygon tube (0.7 mm in diameter; Saint-Gobain Corp., Aurora, OH, USA). After storage (24 h/37 degrees C), the specimens were subjected to shear force (0.5 mm/min). The data were treated by a three-way analysis of variance and Tukey`s test (alpha = 0.05). The failure modes of the debonded interfaces and the etching pattern of adhesives were observed using scanning electron microscopy. Results: Only the main factor ""adhesive"" was statistically significant (p < 0.001). The lowest bond strength value was observed for OptiBond FL. The most defined etching pattern was observed for 35% phosphoric acid and for Adper Prompt L-Pop. Mixed failures were observed for all adhesives, but OptiBond FL showed cohesive failures in resin predominantly. Conclusions: The increase in the conditioning time as well as the enamel pretreatment did not provide an increase in the resin-enamel bond strength values for the studied adhesives. CLINICAL SIGNIFICANCE The surface enamel preparation and the conditioning time do not affect the performance of self-etch systems to enamel. (J Esthet Restor Dent 20:322-336, 2008)

Immobilization of Catalysts of Biological Interest on Porous Oxidized Silicon Surfaces

The present paper deals with the immobilization of redox mediators and proteins onto protected porous silicon surfaces to obtain their direct electrochemical reactions and to retain their bioactivities. This paper shows that MP-11 and viologens are able to establish chemical bonds with 3-aminopropyltriethoxylsilane-modified porous silicon surface. The functionalization of the surfaces have been fully characterized by energy dispersive X-ray analysis (EDX) and X-ray photoelectron spectroscopy (XPS) to examine the immobilization of these mediators onto the solid surface. Amperometric and open circuit potential measurements have shown the direct electron transfer between glucose oxidase and the electrode in the presence of the viologen mediator covalently linked to the 3-aminopropyltriethoxylsilane (APTES)-modified porous silicon surfaces.

Photocatalytic decomposition of methylene blue via Fenton mechanisms by silicon wafer doped with Au and Cu: a theoretical and experimental study

In this work, we studied the photocatalytic and the structural aspects of silicon wafers doped with Au and Cu submitted to thermal treatment. The materials were obtained by deposition of metals on Si using the sputtering method followed by fast heating method. The photocatalyst materials were characterized by synchrotron-grazing incidence X-ray fluorescence, ultraviolet-visible spectroscopy, X-ray diffraction, and assays of H(2)O(2) degradation. The doping process decreases the optical band gap of materials and the doping with Au causes structural changes. The best photocatalytic activity was found for thermally treated material doped with Au. Theoretical calculations at density functional theory level are in agreement with the experimental data.

A rapid and reliable bonding process for microchip electrophoresis fabricated in glass substrates

In this report, we describe a rapid and reliable process to bond channels fabricated in glass substrates. Glass channels were fabricated by photolithography and wet chemical etching. The resulting channels were bonded against another glass plate containing a 50-mu m thick PDMS layer. This same PDMS layer was also used to provide the electrical insulation of planar electrodes to carry out capacitively coupled contactless conductivity detection. The analytical performance of the proposed device was shown by using both LIF and capacitively coupled contactless conductivity detection systems. Efficiency around 47 000 plates/m was achieved with good chip-to-chip repeatability and satisfactory long-term stability of EOF. The RSD for the EOF measured in three different devices was ca. 7%. For a chip-to-chip comparison, the RSD values for migration time, electrophoretic current and peak area were below 10%. With the proposed approach, a single chip can be fabricated in less than 30 min including patterning, etching and sealing steps. This fabrication process is faster and easier than the thermal bonding process. Besides, the proposed method does not require high temperatures and provides excellent day-to-day and device-to-device repeatability.

Buried screen-printed contacts for silicon solar cells

A Simple way to improve solar cell efficiency is to enhance the absorption of light and reduce the shading losses. One of the main objectives for the photovoltaic roadmap is the reduction of metalized area on the front side of solar cell by fin lines. Industrial solar cell production uses screen-printing of metal pastes with a limit in line width of 70-80 μm. This paper will show a combination of the technique of laser grooved buried contact (LGBC) and Screen-printing is able to improve in fine lines and higher aspect ratio. Laser grooving is a technique to bury the contact into the surface of silicon wafer. Metallization is normally done with electroless or electrolytic plating method, which a high cost. To decrease the relative cost, more complex manufacturing process was needed, therefore in this project the standard process of buried contact solar cells has been optimized in order to gain a laser grooved buried contact solar cell concept with less processing steps. The laser scribing process is set at the first step on raw mono-crystalline silicon wafer. And then the texturing etch; phosphorus diffusion and SiNx passivation process was needed once. While simultaneously optimizing the laser scribing process did to get better results on screen-printing process with fewer difficulties to fill the laser groove. This project has been done to make the whole production of buried contact solar cell with fewer steps and could present a cost effective opportunity to solar cell industries.

Estudo exploratório da deposição de filmes de diamante em alguns substratos cerâmicos

o presente trabalho é um estudo exploratório a respeito da síntese de filmes de diamante via deposiçãoquímica a vapor (CVD) sobre alguns substratos cerâmicos: diboreto de titânio (TiB2), ítria (Y20a), zircão (ZrSi04), zircônia parcialmente e totalmente estabilizada com ítria (Zr02), pirofilita ( Al2Si4OlO(OHh), .alumina (Al2Oa) e nitreto de boro hexagonal (h-BN). Estes substratos foram produzidos, em sua maioria, a partir da sinterização de pós micrométricos em altas temperaturas. Além do estudo em relação a possíveis candidatos alternativos ao tradicional silício para o crescimento de filmes auto-sustentáveis, procuramos encontrar substratos onde o filme aderisse bem e cujas propriedades tribológicas pudessem ser melhoradas com o recobrimento com filme de diamante.Dentre os materiais selecionados, constatamos que a topografia da superfície relacionada à densidade de contornos de grão, desempenha um papel relevante na nucleação do diamante. Além disso, os materiais que favorecem a formação de carbonetos conduziram a melhores resultados na nucleação e crescimento do filme, indicando que a ação da atmosfera reativa do CVD com o substrato também contribui decisivamente para o processo de nucleação. A partir dos resultados obtidos, concluímos que a aderência do filme de diamante ao zircão é excelente, assim como a qualidade do filme, o que pode serexplorado convenientemente caso as propriedades mecânicas do sinterizado de zircão sejam adequadas. No caso da zircônia parcialmente estabilizada, os resultados obtidos foram surpreendentes e este material poderia substituir o convencional substrato de silício para a deposição de filmes auto-sustentados de diamante, com inúmeras vantagens, dentre elas o fato de ser reutilizável e de não ser necessário ataque com ácidos para remoção do substrato, o que evita a geração de resíduos químicos.

Metodologia de análise de dioxinas em cinzas obtidas da incineração de couro Wet-Blue

O presente trabalho trata da validação de uma metodologia de análise para a determinação de dibenzo-p-dioxinas policloradas (PCDDs) em cinzas obtidas através de um processo de incineração de aparas de couro wet-blue. As dioxinas, compostos de extrema toxicidade, podem ser formadas na superfície das partículas de cinzas em reações de combustão. O mecanismo de formação de PCDDs requer uma atmosfera rica em oxigênio, uma fonte de cloro e a presença na cinza de um metal capaz de catalizar uma reação Deacon. O couro wet-blue apresenta em sua composição os precursores para a formação de dioxinas tais como o cloro e o metal catalisador sódio, cuja presença destes elementos foi comprovada por análises de superfície realizadas no couro e nas cinzas usando as técnicas de Rutherford Back-scattering Spectrometry (RBS) e Microscopia Eletrônica de Varredura (MEV). Desta forma, torna-se necessária a análise de dioxinas em cinzas de couro para especificar seu tratamento e destino final. As cinzas de couro foram obtidas numa unidade de bancada de incineração com reator de leito fixo, processo conhecido como GCC (Gaseificação e Combustão Combinadas). A metodologia utilizada para analisar dioxinas nas cinzas de couro foi baseada no Método 8280B da Agência de Proteção Ambiental dos Estados Unidos da América (EPA-USA). Este método descreve os procedimentos de extração de matrizes específicas, o clean-up para os analitos específicos e a determinação de dioxinas através das técnicas de cromatografia gasosa de alta resolução e espectrometria de massa de baixa resolução. O sucesso da análise depende da preparação dos extratos das amostras, etapa conhecida como clean-up, a qual é descrita minuciosamente neste trabalho, incluindo a montagem das colunas cromatográficas. A eficiência de extração das dioxinas foi obtida com os resultados comparativos das análises entre matrizes contaminadas com solução padrão de dioxinas e o padrão analítico. A validação deste método para análise de dioxinas policloradas em cinzas de couro wet-blue foi considerada satisfatória para os objetivos do trabalho, uma vez que a eficiência de extração de dioxinas obtida ficou dentro dos critérios estabelecidos pelo método.

Determinação das espécies de cromo nas cinzas da incineração de couro wet-blue em reatores de leito fixo e leito fluidizado

Este trabalho tem como objetivo a determinação quantitativa da concentração de cromo (III, VI e total) nas cinzas de serragem de couro wet-blue, incineradas em reatores de leito fixo nas temperaturas de 450, 550 e 650 C e reator de leito fluidizado nas temperaturas de 730, 780, 830 e 850 C, verificando se estes resultados estão dentro dos limites permitidos pelas normas ambientais brasileiras e, consequentemente, se em relação à concentração de cromo, os processos de incineração utilizados são uma maneira adequada de promover a eliminação ambientalmente aceitável da serragem de couro wet-blue. Realizou-se, neste trabalho, o estudo dos procedimentos para digestão da amostra, dos métodos analíticos quantitativos para a determinação da concentração de cromo que constatou-se depender da valência a ser analisada. As determinações de cromo total e cromo hexavalente contido nas cinzas foram realizadas após digestão ácida e digestão alcalina da amostra, respectivamente. Após o processo de digestão o cromo total (na forma de Cr (VI)) e o cromo hexavalente foram determinados por dois métodos espectrofotométricos na forma de Cr (VI) em meio ácido com difenilcarbazida (DPC) e após redução na forma de Cr (III), complexado com EDTA. O cromo total também foi determinado por volumetria empregando o método titulométrico. Este método não foi empregado na determinação de cromo hexavalente devido aos baixos teores deste nas cinzas. O teor de Cr (III) foi obtido pela diferença entre o cromo total e cromo hexavalente Procedendo-se a análise estatística dos resultados de cromo hexavalente e total nas cinzas pelos diferentes técnicas analíticas, independente do tipo de incinerador, verificou-se que não há diferenças significativas entre os mesmos. Podendo, portanto, utilizar quaisquer uma das técnicas para avaliá-los. Comparando-se os resultados das análises obtidos na incineração da serragem de couro wet-blue em reator de leito fixo e reator de leito fluidizado em diferentes temperaturas, verificou-se que no reator de leito fixo o teor de Cr (VI) nas cinzas geradas foi muito baixa, praticamente inexistente; enquanto que no reator de leito fluidizado se a temperatura de combustão não for muito alta o teor de Cr (VI) ficará dentro dos limites aceitáveis. As cinzas provenientes de qualquer um dos processos de incineração analisadas, neste trabalho, tanto do reator de leito fixo como de leito fluidizado não é conveniente que seja descartada diretamente no solo. As mesmas devem ser aproveitadas na indústria de cerâmicos, ou mesmo em algum processo que visa recuperar o cromo.

Estudo da molhabilidade de ligas de adição à base de prata sobre insertos cerâmicos para aplicação em brocas perfuração de poços de petróleo

Metal-ceramic interfaces are present in tricone drill bits with hard ceramic inserts for oil well drilling operations. The combination of actions of cutting, crushing and breaking up of rocks results in the degradation of tricone drill bits by wear, total or partial rupture of the drill bit body or the ceramic inserts, thermal shock and corrosion. Also the improper pressfitting of the ceramic inserts on the bit body may cause its total detachment, and promote serious damages to the drill bit. The improvement on the production process of metal-ceramic interfaces can eliminate or minimize some of above-mentioned failures presented in tricone drill bits, optimizing their lifetime and so reducing drilling metric cost. Brazing is a widely established technique to join metal-ceramic materials, and may be an excellent alternative to the common mechanical press fitting process of hard ceramic inserts on the steel bit body for tricone drill bit. Wetting phenomena plays an essential role in the production of metal/ceramic interfaces when a liquid phase is present in the process. In this work, 72Silver-28Copper eutectic based brazing alloys were melted onto zirconia, silicon nitride and tungsten carbide/Co substrates under high vacuum. Contact angle evolution was measured and graphically plotted, and the interfaces produced were analysed by SEM-EDX. The AgCu eutectic alloy did not wet any ceramic substrates, showing high contact angles, and so without chemical interaction between the materials. Better results were found for the systemns containing 3%wt of titanium in the AgCu alloy. The presence os titanium as a solute in the alloy produces wettable cand termodinamically stable compounds, increasing the ceramics wetting beahviour