Fano resonance in heavily doped porous silicon

Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si-SiO(2) interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined. Copyright (C) 2011 John Wiley & Sons, Ltd.

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

FAPESP

CNPq

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Argentinean CIUNT

Argentinean CIUNT

CONICET

Consejo Nacional de Investigaciones Científicas y Técnicas de Argentina (CONICET)

Fondo para la Investigación Científica y Tecnológica (FonCyT)

FONCyT