Oxygen-mediated electron transport through hybrid silicon-organic interfaces
Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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Data(s) |
20/10/2012
20/10/2012
2008
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Resumo |
We investigate from first principles the electronic and transport properties of hybrid organic/silicon interfaces of relevance to molecular electronics. We focus on conjugated molecules bonded to hydrogenated Si through hydroxyl or thiol groups. The electronic structure of the systems is addressed within density functional theory, and the electron transport across the interface is directly evaluated within the Landauer approach. The microscopic effects of molecule-substrate bonding on the transport efficiency are explicitly analyzed, and the oxygen-bonded interface is identified as a candidate system when preferential hole transfer is needed. |
Identificador |
NANOTECHNOLOGY, v.19, n.28, 2008 0957-4484 http://producao.usp.br/handle/BDPI/29427 10.1088/0957-4484/19/28/285201 |
Idioma(s) |
eng |
Publicador |
IOP PUBLISHING LTD |
Relação |
Nanotechnology |
Direitos |
restrictedAccess Copyright IOP PUBLISHING LTD |
Palavras-Chave | #NEGATIVE DIFFERENTIAL RESISTANCE #MONOLAYERS #SURFACES #MICROSCOPY #JUNCTIONS #MOLECULES #Engineering, Multidisciplinary #Nanoscience & Nanotechnology #Materials Science, Multidisciplinary #Physics, Applied |
Tipo |
article original article publishedVersion |