Magnetic properties and rectifying behaviour of silicon doped with gadolinium

The magnetic/nonmagnetic p-n junction was prepared by implanting gadolinium into the n-type silicon with low-energy dual-ion-beam epitaxy technology. The magnetic layer GdxSi1-x shows excellent magnetic properties at room temperature. High magnetic moment 10mu(B) per Gd atom is observed, which is interpreted by RKKY mechanism. Magnetic/nonmagnetic p-n junctions show rectifying behaviour, but no magnetoresistance is observed.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Growth and photoluminescence of epitaxial CeO2 film on Si (111) substrate

A CeO2 film with a thickness of about 80nm was deposited by a mass-analysed low-energy dual ion beam deposition technique on an Si(111) substrate. Reflection high-energy electron diffraction and x-ray diffraction measurements showed that the film is a single crystal. The tetravalent state of Ce in the film was confirmed by x-ray photoelectron spectroscopy measurements, indicating that stoichiometric CeO2 was formed. Violet/blue light emission (379.5 nm) was observed at room temperature, which may be tentatively explained by charge transitions from the 4f band to the valence band of CeO2.

THE EFFECT OF PASSIVATION OF BORON DOPANTS BY HYDROGEN IN NANO-CRYSTALLINE AND MICROCRYSTALLINE SILICON FILMS

It is well known that the value of room-temperature conductivity sigma(RT) of boron-doped silicon films is one order lower than that of phosphorus-doped silicon films, when they are deposited in an identical plasma-enhanced chemical vapour deposition system. We use surface acoustic wave and secondary-ion mass spectrometry techniques to measure the concentration of total and electrically active boron atoms. It is shown that only 0.7% of the total amount of incorporated boron is electrically active. This is evidence that hydrogen atoms can passivate substitutional B-Si bonds by forming the neutral B-H-Si complex. By irradiating the boron-doped samples with a low-energy electron beam, the neutral B-H-Si complex converts into electrically active B-Si bonds and the conductivity can be increased by about one order of magnitude, up to the same level as that of phosphorus-doped samples.

A novel high sensitivity CE-PTHPT for optical fiber communication

Planar punch through heterojunction phototransistors with a novel emitter control electrode and ion- implanted isolation (CE-PTHPT) are investigated. The phototransistors have a working voltage of 3-10V and high sensitivity at low input power. The base of the transistor is completely depleted under operating condition. Base current is zero. The CE-PTHPT has an increased speed and a decreased noise. The novel CE-PTHPT has been fabricated in this paper. The optical gain of GaAlAs/GaAs CE-PTHPT for the incident light power 1.3 and 43nw with the wavelength of 0.8 mu m reached 1260 and 8108. The input noise current calculated is 5.46 x 10(-16) A/H-z(1/2). For polysilicon emitter CE-PTHPT, the optical gain is 3083 at the input power of 0.174 mu w. The optical gain of InGaAs/InP CE-PTHPT reaches 350 for an incident power of 0.3 mu w at the wavelength of 1.55 mu m. The CE-PTHPT detectors is promising as photo detectors for optical fiber communication system.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Beam dynamics design of an RFQ for a planned accelerator, which uses a direct plasma injection scheme

To meet the requirements of providing high-intensity heavy ion beams the direct plasma injection scheme (DPIS) was proposed by a RIKEN-CNS-TIT collaboration. In this scheme a radio frequency quadrupole (RFQ) was joined directly with the laser ion source (LIS) without a low-energy beam transport (LEBT) line. To find the best design of the RFQ that will have short length, high transmission efficiency and small emittance growth, beam dynamics designs with equipartitioning design strategy and with matched-only design strategy have been performed, and a comparison of their results has also been done. Impacts of the input beam parameters on transmission efficiency are presented, too. (C) 2008 Elsevier B.V. All rights reserved.

Electron impact excitation of xenon from the metastable state to the excited states

The electron impact excitation cross sections from the lowest metastable state 5p(5)6sJ = 2 to the six lowest excited states of the 5p(5)6p configuration of xenon are calculated systematically by using the fully relativistic distorted wave method. In order to discuss the effects of target state descriptions on the electron impact excitation cross sections, two correlation models are used to describe the target states based on the multiconfiguration Dirac-Fock (MCDF) method. It is found that the correlation effects play a very important role in low energy impact. For high energy impact, however, the cross sections are not sensitive to the description of the target states, but many more partial waves must be included.

Slow cross-symmetry phase relaxation in complex collisions

We discuss the effect of slow phase relaxation and the spin off-diagonal S-matrix correlations on the cross-section energy oscillations and the time evolution of the highly excited intermediate systems formed in complex collisions. Such deformed intermediate complexes with strongly overlapping resonances can be formed in heavy-ion collisions, bimolecular chemical reactions, and atomic cluster collisions. The effects of quasiperiodic energy dependence of the cross sections, coherent rotation of the hyperdeformed similar or equal to(3 : 1) intermediate complex, Schrodinger cat states, and quantum-classical transition are studied for Mg-24 + Si-28 heavy-ion scattering.

Crossing the phantom divide in brane cosmology with curvature corrections and brane-bulk energy transfer

We consider the Randall-Sundrum brane-world model with bulk-brane energy transfer where the Einstein-Hilbert action is modified by curvature correction terms: a four-dimensional scalar curvature from induced gravity on the brane, and a five-dimensional Gauss-Bonnet curvature term. It is remarkable that these curvature terms will not change the dynamics of the brane universe at low energy. Parameterizing the energy transfer and taking the dark radiation term into account, we find that the phantom divide of the equation of state of effective dark energy could be crossed, without the need of any new dark energy components. Fitting the two most reliable and robust SNIa datasets, the 182 Gold dataset and the Supernova Legacy Survey (SNLS), our model indeed has a small tendency of phantom divide crossing for the Gold dataset, but not for the SNLS dataset. Furthermore, combining the recent detection of the SDSS baryon acoustic oscillations peak (BAO) with lower matter density parameter prior, we find that the SNLS dataset also mildly favors phantom divide crossing.

PIC mode simulation of solenoid collimation channel

A new SSC (Separated Sector Cyclotron)-Linac is being designed to serve as an injector for the SSC at the HIRFL (Heavy Ion Research Facility Lanzhou). The beam intensity at the LEBT (Low Energy Beam Transport) for the heavy ions after the selection is typically low and the space charge effects are inconspicuous. The space charge effects become obvious when the beam current increases to a few hundred microamperes. The emittance growth deriving from the space charge effects may be particularly troublesome for the following linac and cyclotron. An optical system containing three solenoids has been designed for the LEBT to limit the beam emittance and to avoid the unnecessary beam loss in the cyclotron, as well as for the purpose of immunizing the LEBT emittance growth due to the space charge effects. The results of the PIG (Particle-In-Cell) mode simulation illustrate that this channel could limit the beam emittance growth and increase the beam brightness.

Two Electron Transfer and Stabilization in Slow O6+ and Rare-Gas Collisions

The stabilization ratios.. for double-electron transfer, i.e., the cross section ratios of true double capture to total double-electron transfer, are measured in O6++ He, Ne and Ar collisions at 6 keV/u. A high.. value about 68% is obtained for the He target, while for the Ar target, the.. value is only 8%. The high R value for the He target is due to the significant direct population of the (2l, nl') configurations with high n For the Ar target, the (quasi) symmetric configurations (3l, nl') lead to the much lower.. value. Neglecting the core effects, the O6+ ion can be taken as a bare ion C6+ except the occupied 1s shell, and then the measured R values are compared with previous experimental results of C6+ projectile ions at similar impact velocity. It yields good agreement with the Ne and Ar target, while the occupied 1s shell for the O6++ He system results in a higher R value than that in C6++He collisions.

低能重离子束对生物分子的辐照效应研究

该文采用L(+)-半胱氨酸及其衍生物和原卟啉Ⅸ二钠盐等生物分子中所没有的铁元素的重离子注入和多种现代仪器分析技术,研究了低能重离子束对生物分子的辐射照应.总之,荷能铁离子束辐照生物分子不但可引起分子的结构损伤,产生新的分子产物,也可沉积在新的改性分子产物之中,直接证实了注入重离子的质量沉积效应,对重离子束生物学的发展提供了重要的理论支持.该文的研究结果还预示着重离子束必将在生物和药物分子改性等研究领域具有重要的实际应用价值.

Calculation of electrostatic energy H-e(fd) on 4f(N-1)5d configurations for heavy lanthanide ions

For the 4f(N-1)5d configuration the Coulomb interaction between f and d electrons was parameterized by F-k(fd) with K = 2, 4, and G(K)(fd) with K = 1, 3, 5. The spin-orbit interaction for 4f and 5d electrons can be parameterized by xi (f) and xi (d) respectively, which can be compounded into one lambda : lambda = axi (f) + bxi (d), where a and b are the corresponding coefficients. The energy expressions of H-e(fd) of the chief low-energy levels of 4f(N-) (1)5d configuration for heavy lanthanide ions were calculated and the corresponding spin-orbit parameters lambda were also given in LS coupling, which are profitable in analyzing the spectra of the heavy lanthanide ions.

Electrospray ionization tandem mass spectrometric study of the aconitines in the roots of aconite

Fragmentation pathways of aconitine-type alkaloids were investigated by electrospray ionization/ion trap multistage tandem mass spectrometry. Low-energy collision-induced dissociation of protonated aconitines follows a dominant first step, the elimination of the C-8-substituent as acetic acid or fatty acid in MS2 spectra. Successive losses of 1-4 CH3OH molecules, 1-3 H2O, CO, benzoic acid, and CH3 or C2H5 (N-substituents) are all fragmentation pathways observed in MS3 and MS4 spectra. By applying knowledge of these fragmentation pathways to the aconitines in the ethanolic extract of aconite roots, all the known aconitines were detected and also 23 unknown aconitine-type alkaloids, in which the lipo-alkaloids containing residues of 15C, 17C and 19C saturated or unsaturated fatty acids were characterized. These odd-carbon-number fatty acid substituents have not been reported previously.