The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode—rectifying an oversight in Schottky diode investigation

Schottky-barrier structures with a resistive metal electrode are examined using the 4-point probe method where the probes are connected to the metal electrode only. The observation of a significant decrease in resistance with increasing temperature (over a range of similar to 100 K) in the diode resistance-temperature (R(D)-T) characteristic is considered due to charge carrier confinement to the metal electrode at low temperature (high resistance), with the semiconductor progressively opening up as a parallel current carrying channel (low resistance) with increasing temperature due to increasing thermionic emission across the barrier. A simple model is constructed, based on thermionic emission at quasi-zero bias, that generates good fits to the experimental data. The negative differential resistance (NDR) region in the R(D)-T characteristic is a general effect and is demonstrated across a broad temperature range for a variety of Schottky structures grown on Si-, GaAs- and InP-substrates. In addition the NDR effect is harnessed in micro-scaled Pd/n-InP devices for the detection of low levels of hydrogen in an ambient atmosphere of nitrogen.

A Phase I Trial of Bortezomib in Combination with Epirubicin, Carboplatin and Capecitabine (VECarboX) in Advanced Gastric and Gastro-oesophageal Junction Adenocarcinoma

PURPOSE:
The protease inhibitor bortezomib attenuates the action of NF-κB and has shown preclinical activity alone and in combination with chemotherapy.

DESIGN:
A Phase I dose-escalation study was performed administering bortezomib (0.7, 1.0, 1.3 and 1.6 mg m(-2) on days 1 and 8 from cycle 2 onwards) in combination with Epirubicin 50 mg m(-2) intravenously on day 1, Carboplatin AUC 5 day 1 and Capecitabine 625 mg m(-2) BD days 1-21 every 21 days (VECarboX regimen), in patients with advanced oesophagogastric adenocarcinoma. The primary objective was to define the maximum tolerated dose (MTD) of Bortezomib when combined with ECarboX.

RESULTS:
18 patients received bortezomib 0.7 (n = 6), 1.0 (n = 3), 1.3 (n = 6) and 1.6 mg m(-2) (n = 3) and a protocol amendment reducing the capecitabine dose to 500 mg m(-2) BD was enacted due to myelotoxicity. Common treatment-related non-haematological adverse events of any grade were fatigue (83.3 %), anorexia (55.6 %), constipation (55.6 %) and nausea (55.6 %). Common Grade 3/4 haematological toxicities were neutropenia (77.8 %) and thrombocytopenia (44.4 %). Objective responses were achieved in 6 patients (33.3 %) and a further 5 patients (27.8 %) had stable disease for >8 weeks.

CONCLUSIONS:
The addition of Bortezomib to ECarboX is well tolerated and response rates are comparable with standard chemotherapy.

Barrier characteristics of PtSi/p-Si schottky diodes as determined from I-V-T measurements

The current-voltage-temperature characteristics of PtSi/p-Si Schottky barrier diodes were measured in the temperature range 60-115 K. Deviation of the ideality factor from unity below 80 K may be modelled using the so-called T-0 parameter with T-0 = 18 K. It is also shown that the curvature in the Richardson plots may be remedied by using the flatband rather than the zero-bias saturation current density. Physically, the departure from ideality is interpreted in terms of an inhomogeneous Schottky contact. Here we determine a mean barrier height at T = 0 K, phi(b)(-0) = 223 mV, with an (assumed) Gaussian distribution of standard deviation sigma(phi) = 12.5 mV. These data are correlated with the zero-bias barrier height, phi(j)(0) = 192 mV (at T = 90 K), the photoresponse barrier height, phi(ph) = 205 mV, and the flatband barrier height, phi(fb) = 214 mV. Finally, the temperature coefficient of the flatband barrier was found to be -0.121 mV K-1, which is approximately equal to 1/2(dE(g)(i)/dT), thus suggesting that the Fermi level at the interface is pinned to the middle of the band gap.

PHOTOSIGNAL ENHANCEMENT IN AL-GAAS DIODES DUE TO SURFACE-PLASMONS AND GUIDED-WAVE MODES

Light of wavelength 632.8 nm and p-polarization is incident on a prism-air gap (varied from 0.7 to 7 mum)-Al-GaAs arrangement. Both the photosignal generated by the Schottky diode and the reflectance are measured as a function of the internal angle of incidence in the prism. There is significant, well-defined enhancement of the photosignal, up to a factor of approximately 7.5, associated with two different types of enhanced absorption modes. For air gaps <1.5 mum there is photosignal enhancement due to an enhanced absorption feature (reflectance dip) that occurs at an angle of incidence just above critical angle in the prism; this feature corresponds to the excitation of a surface plasmon polariton at the Al-air interface. For air gaps > 1 mum there are between one and ten photoresponse peaks at input angles less than the critical angle. The corresponding enhanced absorption features are due to leaky guided wave modes set up in the air gap.

ANALYSIS OF SURFACE-PLASMON POLARITON ENHANCEMENT IN PHOTODETECTION BY AL-GAAS SCHOTTKY DIODES

The surface plasmon polariton mediated photoresponse from Al-GaAs diodes is examined in a prism-air gap-diode configuration as a function of both the wavelength of the incident light and thickness of the Al electrode. The experimental data shows a pronounced dip in reflectance as a function of internal angle of incidence in the prism, due to the excitation of the surface plasmon polariton at the Al-air interface, and a corresponding peak in device photosignal. Careful modelling of reflectance and quantum efficiency data shows that the bulk of the signal is generated by light which is re-radiated from this surface mode into the semiconductor substrate where it is absorbed by the creation of electron-hole pairs in the depletion region. This holds for all the wavelengths used here (all are shorter than the GaAs absorption edge) and across the thickness range of the Al electrodes (20-50 nm). Quantum efficiencies in the range 0.5-22% and enhancement factors of typically 7.5 were recorded in this investigation.

FAST MODE SURFACE-PLASMON DAMPING ON TUNNEL JUNCTION STRUCTURES

Using a prism-air gap-sample (Otto) configuration we have optically excited surface plasmon polaritons at the Ag-air interface of passive Al-Al oxide-Ag tunnel junction structures at wavelength 632.8 nm. It is found that the internal damping of this excitation is more than a factor of 2 greater for samples with a very thin (approximately 15 nm) Ag electrode than for samples with a thicker (approximately 40 nm) Ag electrode. This observation is explained by the fact that the fields of the surface plasmon polariton penetrate more substantially into the lossy Al base electrode when the Ag top electrode is very thin.

Cavity-aided quantum parameter estimation in a bosonic double-well Josephson junction

We describe an apparatus designed to make non-demolition measurements on a Bose-Einstein condensate (BEC) trapped in a double-well optical cavity. This apparatus contains, as well as the bosonic gas and the trap, an optical cavity. We show how the interaction between the light and the atoms, under appropriate conditions, can allow for a weakly disturbing yet highly precise measurement of the population imbalance between the two wells and its variance. We show that the setting is well suited for the implementation of quantum-limited estimation strategies for the inference of the key parameters defining the evolution of the atomic system and based on measurements performed on the cavity field. This would enable {\it de facto} Hamiltonian diagnosis via a highly controllable quantum probe.