镜像核~(13)N-~(13)C和~(15)N-~(15)O中的激发态晕或皮(英文)

用非线性相对论平均场对两对镜像核13N 13C和15N 15O进行了研究. 发现无论在基态还是激发态, 用两套参数所得的结合能都跟实验值很接近. 计算结果显示13N的第一激发态 (2s1 /2 )和第三激发态(1d5 /2 )各存在一个非束缚的质子晕, 而13C的第三激发态 (1d5 /2 )存在一个弱束缚的中子皮. 另外研究表明, 在另一对镜像核15N 15O的第二激发态 (2s1 /2 )和第一激发态 (2s1 /2 )分别存在一个中子晕和质子皮.

Multiple expansions of C-4 plant biomass in East Asia since 7 Ma coupled with strengthened monsoon circulation

IEECAS SKLLQG

delta C-13 variation of C-3 and C-4 plants across an Asian monsoon rainfall gradient in arid northwestern China

IEECAS SKLLQG

Kinetic energies of C-n(+) (n <= 58) fragment ions produced by nanosecond laser impact on C-60

Laser-induced fragmentation of C-60 has been studied using a time-of-flight mass spectrometric technique. The average kinetic energies of fragment ions C-n(+) (n <= 58) have been extracted from the measured full width at half maximum (FWHM) of ion beam profiles. The primary formation mechanism of small fragment ion C-n(+) (n < 30) is assumed to be a two-step fragmentation process: C60 sequential decay to unstable C-30(+) ion and the binary fission of C-30(+). Considering a second photo absorption process in the later part of laser pulse duration, good agreement is achieved between experiment and theoretical description of photoion formation. (C) 2009 Elsevier B. V. All rights reserved.

Modification of C-doped a-SiO2 after Swift Heavy-Ion Irradiation

Amorphous SiO2 (a-SiO2) thin films were thermally grown on single-crystalline silicon. These a-SiO2/Si samples were first implanted (C-doped) with 100-keV carbon ion at room temperature (RT) at a dose of 5.0 x 10(17) C-ions/cm(2) and were then irradiated at RT by using 853 MeV Pb ions at closes of 5.0 x 10(11), 1.0 x 10(12), 2.0 x 10(12) and 5.0 x 10(12) Pb-ions/cm(2), respectively. The microstructures and the photoluminescence (PL) properties of these samples induced by Pb ions were investigated using fluorescence spectroscopy and transmission electron microscopy. We found that high-energy Pb-ion irradiation could induce the formation of a new phase and a change in the PL property of C-doped a-SiO2/Si samples. The relationship between the observed phenomena and the ion irradiation parameters is briefly discussed.