FTIR study of C-implanted SiO2 after high-energy Pb-ion irradiation

Autoria(s): ZhaoZM; WangZG; BenyagoubA; ToulemondeM; LevesqueF; SongY; JinYF; SunYM
Data(s)

2005
Identificador

http://ir.impcas.ac.cn/handle/113462/1163

http://www.irgrid.ac.cn/handle/1471x/127659
Fonte

ZhaoZM；WangZG；BenyagoubA；ToulemondeM；LevesqueF；SongY；JinYF；SunYM.FTIR study of C-implanted SiO2 after high-energy Pb-ion irradiation,HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2005,29(8):824-829
Palavras-Chave #low energy ion implantation #high-energy heavy ion irradiation #atom-mixing #FTIR spectrum #phase transition #bonding formation
Tipo

期刊论文
Acesso ao item digital