CMOS-Compatible and Scalable Deposition of Nanocrystalline Zinc Ferrite Thin Film to Improve Inductance Density of Integrated RF Inductor

Development towards the combination of miniaturization and improved functionality of RFIC has been stalled due to the lack of high-performance integrated inductors. To meet this challenge, integration of magnetic material with high permeability as well as low conductivity is a must. Ferrite films are excellent candidates for RF devices due to their low cost, high resistivity, and low eddy current losses. Unlike its bulk counterpart, nanocrystalline zinc ferrite, because of partial inversion in the spinel structure, exhibits novel magnetic properties suitable for RF applications. However, most scalable ferrite film deposition processes require either high temperature or expensive equipment or both. We report a novel low temperature (< 200 degrees C) solution-based deposition process for obtaining high quality, polycrystalline zinc ferrite thin films (ZFTF) on Si (100) and on CMOS-foundry-fabricated spiral inductor structures, rapidly, using safe solvents and precursors. An enhancement of up to 20% at 5 GHz in the inductance of a fabricated device was achieved due to the deposited ZFTF. Substantial inductance enhancement requires sufficiently thick films and our reported process is capable of depositing smooth, uniform films as thick as similar to 20 mu m just by altering the solution composition. The method is capable of depositing film conformally on a surface with complex geometry. As it requires neither a vacuum system nor any post-deposition processing, the method reported here has a low thermal budget, making it compatible with modern CMOS process flow.

Near-infrared photoactive Cu2ZnSnS4 thin films by co-sputtering

The thin films of Cu2ZnSnS4 (CZTS) were grown by co-sputtering further the structural, optical and electrical properties were analyzed and confirmed the CZTS phase formation. The photo response of CZTS in near IR photodectection has been demonstrated. The detector response was measured employing both the IR lamp and IR laser illuminations. The calculated growth and decay constants were 130 m sec and 700 m sec followed by the slower components upon lamp illumination. The external quantum efficiency of 15%, responsivity of 13 AW(-1) makes CZTS a suitable candidate for the IR photodectection.

Asynchronous Measurement of Transient Phase-Shift Resulting From RF Receiver State-Change

In a wireless receiver, a down-converted RF signal undergoes a transient phase shift, when the gain state is changed to adjust for varying conditions in transmission and propagation. A method is developed, in which such phase shifts are detected asynchronously, and their undesirable effects on the bit error rate are corrected. The method was developed for and used in, the system-level characterization and calibration of a 65-nm CMOS UHF receiver. The phase-shifts associated with specific gain-state transitions were measured within a test framework, and used in the baseband signal processing blocks to compensate for errors, whenever the receiver anticipated a gain-state transition.

A power-scalable RF CMOS receiver for 2.4 GHz Wireless Sensor Network applications

A power scalable receiver architecture is presented for low data rate Wireless Sensor Network (WSN) applications in 130nm RF-CMOS technology. Power scalable receiver is motivated by the ability to leverage lower run-time performance requirement to save power. The proposed receiver is able to switch power settings based on available signal and interference levels while maintaining requisite BER. The Low-IF receiver consists of Variable Noise and Linearity LNA, IQ Mixers, VGA, Variable Order Complex Bandpass Filter and Variable Gain and Bandwidth Amplifier (VGBWA) capable of driving variable sampling rate ADC. Various blocks have independent power scaling controls depending on their noise, gain and interference rejection (IR) requirements. The receiver is designed for constant envelope QPSK-type modulation with 2.4GHz RF input, 3MHz IF and 2MHz bandwidth. The chip operates at 1V Vdd with current scalable from 4.5mA to 1.3mA and chip area of 0.65mm2.

RF plasma MOCVD of Y2O3 thin films: Effect of RF self-bias on the substrates during deposition

Yttrium oxide (Y203) thin films have been deposited by radio frequency plasma assisted metal organic chemical vapor deposition (MOCVD) process using (2,2,6,6-tetramethy1-3,5-heptanedionate) yttrium (commonly known as Y(thd)3) precursor in a plasma of argon and oxygen gases at a substrate temperature of 350 C. The films have been deposited under influence of varying RF self-bias (-50 V to 175 V) on silicon, quartz, stainless steel and tantalum substrates. The deposited coatings are characterized by glancing angle X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry and scanning electron microscopy (SEM). GIXRD and FTIR results indicate deposition of Y2 03 (BCC structure) in all cases. However, XPS results indicate nonstoichiometric cubic phase deposition on the surface of deposited films. The degree of nonstoichiometry varies with bias during deposition. Ellipsometry results indicate that the refractive index for the deposited films is varying from 1.70 to 1.83 that is typical for Y203. All films are transparent in the investigated wavelength range 300-1200 nm. SEM results indicate that the microstructure of the films is changing with applied bias. Results indicate that it is possible to deposit single phase cubic Y203 thin films at low substrate temperature by RF plasma MOCVD process. RF self-bias that decides about the energy of impinging ions on the substrates plays an important role in controlling the texture of deposited Y203 films on the substrates. Results indicate that to control the structure of films and its texture, it is important to control the bias on the substrate during deposition. The films deposited at high bias level show degradation in the crystallinity and reduction of thickness. (C) 2013 Elsevier B.V. All rights reserved.

Switching and Release Time Analysis of Electrostatically Actuated Capacitive RF MEMS Switches

This paper explains the reason behind pull-in time being more than pull-up time of many Radio Frequency Micro-Electro-Mechanical Systems (RF MEMS) switches at actuation voltages comparable to the pull-in voltage. Analytical expressions for pull-in and pull-up time are also presented. Experimental data as well as finite element simulations of electrostatically actuated beams used in RF-MEMS switches show that the pull-in time is generally more than the pull-up time. Pull-in time being more than pull-up time is somewhat counter-intuitive because there is a much larger electrostatic force during pull-in than the restoring mechanical force during the release. We investigated this issue analytically and numerically using a 1D model for various applied voltages and attribute this to energetics, the rate at which the forces change with time, and softening of the overall effective stiffness of the electromechanical system. 3D finite element analysis is also done to support the 1D model-based analyses.

Sensitivity characteristics of Ag doped BaTiO3-CuO mixed oxide as Carbon-dioxide S ensor

Ag doped BaTiO3-CuO mixed oxide thin films are evaluated for their carbon-dioxide sensing characteristics. The metal oxide films of different thicknesses are deposited on oxidized p type Si < 100 > substrate by RF Sputtering. Sensing characteristics for different CO2 concentration, (300 ppm - 1000 ppm) are obtained for different operating temperatures, (100 degrees C - 400 degrees C). Optimum temperature for maximum sensitivity is found to be 250 degrees C. The effect of annealing on sensing properties is also evaluated. The unannealed films give better sensitivity than that of annealed films. Response time and recovery time are also calculated.

Effect of sputtering parameters on the structure, microstructure and magnetic properties of Tb-Fe films

The effect of sputtering parameters such as gas pressure and power on the structure, microstructure and magnetic properties of sputtered Tb-Fe thin films was investigated. X-ray diffraction and transmission electron microscopy studies showed that all the films were amorphous in nature irrespective of the sputtering parameters. A fine island kind of morphology was observed at low sputtering power whereas large clusters were seen at higher sputtering power. While the composition of Tb-Fe films remained constant with increasing sputtering power, the magnetic behaviour was found to change from superparamagnetic to ferromagnetic. On the other hand, the increase in argon gas pressure was found to deplete the iron concentration in Tb-Fe thin films, which in turn reduced the anisotropy and Curie temperature. Annealing of the films at 773 K did not result in any crystallization and the magnetic properties were also found to remain unchanged. (C) 2015 Elsevier B.V. All rights reserved.

A 0.5-2.0 GHz injection locked oscillator cascade for parallel wideband RF spectrum sensing

An area-efficient, wideband RF frequency synthesizer, which simultaneously generates multiple local oscillator (LO) signals, is designed. It is suitable for parallel wideband RF spectrum sensing in cognitive radios. The frequency synthesizer consists of an injection locked oscillator cascade (ILOC) where all the LO signals are derived from a single reference oscillator. The ILOC is implemented in a 130-nm technology with an active area of . It generates 4 uniformly spaced LO carrier frequencies from 500 MHz to 2 GHz. This design is the first known implementation of a CMOS based ILOC for wide-band RF spectrum sensing applications.

Hydrogen-induced mechanical properties of amorphous silicon thin films

Mechanical properties of thin films such as residual stress and hardness are of paramount importance from the device fabrication point of view. Intrinsic stress in sputtered films can be tensile or compressive as decided by the number density and the energy of the plasma species striking the growing film. In the presence of hydrogen we analyzed the applicability of idealized stress reversal curve for amorphous silicon thin films deposited by DC, pulsed DC (PDC) and RF sputtering. We are successfully able to correlate the microstructure with the stress reversal and hardness. We observed a stress reversal from compressive to tensile with hydrogen incorporation. It was found that unlike in idealized stress reversal curve case, though the energy of plasma species is less in DC plasma, DC deposited films exhibit more compressive stress, followed by PDC and RF deposited films. A tendency towards tensile stress from compressive stress was observed at similar to 13, 18 and 23 at%H for DC, PDC and RF deposited films respectively, which is in exact agreement with the vacancy to void transition in the films. Regardless of the sputtering power mode, the hardness of a-Si:H films is found to be maximum at C-H similar to 10 at%H. Enhancement in hardness with C-H (up to C-H similar to 10 at%H) is attributed to increase of Si-H bonds. Beyond C-H similar to 10 at%H, hardness starts falling. (C) 2015 Elsevier Ltd. All rights reserved.

Part I: High-Voltage MOS Device Design for Improved Static and RF Performance

In this paper, for the first time, the key design parameters of a shallow trench isolation-based drain-extended MOS transistor are discussed for RF power applications in advanced CMOS technologies. The tradeoff between various dc and RF figures of merit (FoMs) is carefully studied using well-calibrated TCAD simulations. This detailed physical insight is used to optimize the dc and RF behavior, and our work also provides a design window for the improvement of dc as well as RF FoMs, without affecting the breakdown voltage. An improvement of 50% in R-ON and 45% in RF gain is achieved at 1 GHz. Large-signal time-domain analysis is done to explore the output power capability of the device.

Part II: A Fully Integrated RF PA in 28-nm CMOS With Device Design for Optimized Performance and ESD Robustness

In this paper, we report drain-extended MOS device design guidelines for the RF power amplifier (RF PA) applications. A complete RF PA circuit in a 28-nm CMOS technology node with the matching and biasing network is used as a test vehicle to validate the RF performance improvement by a systematic device design. A complete RF PA with 0.16-W/mm power density is reported experimentally. By simultaneous improvement of device-circuit performance, 45% improvement in the circuit RF power gain, 25% improvement in the power-added efficiency at 1-GHz frequency, and 5x improvement in the electrostatic discharge robustness are reported experimentally.

RF plasma enhanced MOCVD of yttria stabilized zirconia thin films using octanedionate precursors and their characterization

Yttria stabilized zirconia thin films have been deposited by RF plasma enhanced MOCVD technique on silicon substrates at substrate temperature of 400 degrees C. Plasma of precursor vapors of (2,7,7-trimethyl-3,5-octanedionate) yttrium (known as Y(tod)(3)), (2,7,7-trimethyl-3,5-octanedionate) zirconium (known as Zr(tod)(4)), oxygen and argon gases is used for deposition. To the best of our knowledge, plasma assisted MOCVD of YSZ films using octanediaonate precursors have not been reported in the literature so far. The deposited films have been characterized by GIXRD, FTIR, XPS, FESEM, AFM, XANES, EXAFS, EDAX and spectroscopic ellipsometry. Thickness of the films has been measured by stylus profilometer while tribological property measurement has been done to study mechanical behavior of the coatings. Characterization by different techniques indicates that properties of the films are dependent on the yttria content as well as on the structure of the films. (C) 2015 Elsevier B.V. All rights reserved.