Gain Switch of an AlGaInP Red Light Semiconductor Laser Diode

We solve the single mode coupled rate equations by computer, simulate the behavior of a gain switch of an AlGalnP red light semiconductor laser diode, and find the characteristic of FWHM of pulses changing with the amplitude of modulation signal, the bias current, and the modulated frequency. On this basis, we conduct experiments. The experiment results accord with the simulations well.

High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing

The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 Celsius degree for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 Celsius degree. When the blue shift was 24.7 meV at 480 Celsius degree, the COD power for the window LD was 86.7% higher than the conventional LD.

Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers

国家自然科学基金

Strong red light emission from silicon nanocrystals embedded in SIO2 matrix

In this study, silicon nanocrystals embedded in SiO2 matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250degreesC to RT, the PL intensity increases by two orders of magnitude.