Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors

Current-based microscopic defect analysis method such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current have been developed over the years at Brookhaven National Laboratory (BNL) for the defect characterizations on heavily irradiated (Phi(n) >= 10(13) n/cm(2)) high-resistivity (>= 2 k Omega cm) Si sensors/detectors. The conventional DLTS method using a capacitance transient is not valid on heavily irradiated high-resistivity Si sensors/detectors. A new optical filling method, using lasers with various wavelengths, has been applied, which is more efficient and suitable than the traditional voltage-pulse filling. Optimum defect-filling schemes and conditions have been suggested for heavily irradiated high-resistivity Si sensors/detectors. (c) 2006 Published by Elsevier Ltd.

Experimental observation of negative lateral displacements of microwave beams transmitting through dielectric slabs

It was theoretically predicted that when a beam of light travels through a thin slab of optically denser medium in the air, the emerging beam from the slab will suffer a lateral displacement that is different from the prediction of geometrical optics, that is, the Snell's law of refraction and can be zero and negative as well as positive. These phenomena have been directly observed in microwave experiments in which large angles of incidence are chosen for the purpose of obtaining negative lateral displacements. (C) 2005 Elsevier B.V. All rights reserved.

Observation of quantum beat in Rb by parametric four-wave mixing

Two coupled parametric four-wave-mixing processed in Rb atoms are studied using perturbation theory, which reveals clear evidence of the appearance of quantum beat at 608 cm(-1), corresponding to the energy difference of the 7s - 5d states of Rb atoms, in the parametric four-wave-mixing signals. A pump-probe technique is utilized to observe the quantum beat. Time-varying characteristics of the quantum beat are investigated using time-dependent Fourier transform. The results show that the time-varying characteristics of the quantum beat potential tool for monitoring the dissociation of molecules.

Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice

We have demonstrated a 20 period dislocation-free InGaAs/GaAs quantum dot superlattice which is self-formed by the strain from the superlattice taken as a whole rather than by the strain from the strained single layer. The island formation does not take place while growing the corresponding strained single layer. From the variation of the average dot height in each layer, the strain distribution and relaxation process in the capped superlattice have been examined. It is found that the strain is not uniformly distributed and the greatest strains occur at two interfaces between the superlattice and the substrate and the cap layer in the capped superlattice. (C) 1997 American Institute of Physics.

New observation on the luminescence of CdS clusters in zeolite-Y

The excitation spectrum of CdS dusters in zeolite-Y is consistent with their absorption spectrum, both showing two absorption bands that are assigned to the Is-is and Is-lp transitions, respectively. A new emission at 400 nn is considered to be the recombination of the bounded excitons. The emission firstly increases then decreases with increasing cluster size or loading. The emission by excitation into the Is-is band is stronger and sharper than that by excitation into the Is-lp band. This phenomenon is attributed to the size inhomogeneity and the strong electron-phonon interaction of the dusters. Copyright (C) 1996 Elsevier Science Ltd

Some new observation on the formation and optical properties of CdS clusters in zeolite-Y

CdS clusters in zeolite-Y have been prepared by the exchange of Cd2+ into the zeolite following by sulfurization with Na2S in solution. Blue-shifts from the bulk caused by quantum size effect and the change of absorption upon CdS loading are observed. Two absorption bands are detected for one of the sample and are assigned to the 1s-1s band and exciton transition, respectively. The exciton feature is more pronounced in the excitation spectrum than in the absorption spectrum, and the luminescence excited at the exciton band is stronger than that at the 1s-1s band. Copyright (C) 1996 Elsevier Science Ltd

Investigation on the N-eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations

Neutron induced defect levels in high resistivity silicon detectors have been studied using a current-based macroscopic defect analysis system: thermally stimulated current (TSC) and current deep level transient spectroscopy (I-DLTS). These studies have been correlated to the traditional C-V, I-V, and transient current and charge techniques (TCT/TChT) after neutron radiation and subsequent thermal anneals. It has been found that the increases of the space charge density, N-eff, in irradiated detectors after thermal anneals (N-eff reverse anneal) correspond to the increases of deep levels in the silicon bandgap. In particular, increases of the double vacancy center (V-V and V-V-- -) and/or C-i-O-i level have good correlations with the N-eff reverse anneal. It has also been observed that the leakage current of highly irradiated (Phi(n) > 10(13) n/cm(2)) detectors increases after thermal anneals, which is different from the leakage current annealing behavior of slightly irradiated (Phi(n) < 10(13) n/cm(2)) detectors. It is apparent that V-V center and/or C-i-O-i level play important roles in both N-eff and leakage current degradations for highly irradiated high resistivity silicon detectors.