快重离子辐照引起Ni/SiO2界面原子混合及相变研究

Ni/SiO2 interface were irradiated at room temperature with 308 MeV Xe ions to 1×1012,5×1012 Xe/cm2 and 853 MeV Pb ions to 5×1011 Pb/cm2,respectively.These samples were analyzed using Rutherford Backscattering Spectrometry(RBS) and X-ray diffraction spectroscopy(XRD),from which the intermixing and phase change were investigated.The obtained results show that both Xe-and Pb-ions could induce diffusion of Ni atoms to SiO2 substrates and result in intermixing of Ni with SiO2.Furthermore,1.0×1012 Xe/cm2 irradiat...中文摘要：在室温下用308 MeV的Xe离子和853 MeV的Pb离子辐照Ni/SiO2样品,用卢瑟福背散射和X射线衍射技术对样品进行了分析。通过分析Ni/SiO2样品中元素成分分布和结构随离子辐照剂量和电子能损的变化,探索了离子辐照在Ni/SiO2样品中引起的界面原子混合与结构相变现象。实验结果显示,Xe和Pb离子辐照均能引起明显的Ni原子向SiO2基体的扩散并导致界面附近Ni,Si和O原子的混合。实验观测到低剂量Xe离子辐照可产生NiSi2相,而高剂量Xe离子辐照则导致了Ni3Si和NiO相的形成。根据热峰模型,Ni原子的扩散和新相的形成可能由沿离子入射路径强电子激发引起的瞬间热峰过程驱动。

HIRFL-CSR前端总线控制器的改进设计

论述了用于兰州重离子加速器冷却存储环(HIRFL-CSR)控制系统的前端总线系统控制器的改进。改进了控制器的嵌入式操作系统和应用程序,开发了控制器和数据库交换数据的应用程序。该控制器基于BGA封装的ARM920T(ARM9)处理器和嵌入式的LINUX操作系统,可以连接标准的VGA显示器、键盘、鼠标,采用了现场可编程的FPGA器件进行背板接口设计,并具有64mA高驱动能力的总线驱动器,以及拥有灵活的接口信号定义可编程能力,是HIRFL-CSR控制系统的关键部件。

快重离子辐照引起Ni/SiO_2界面原子混合及相变研究

在室温下用308 MeV的Xe离子和853 MeV的Pb离子辐照Ni/Si O2样品,用卢瑟福背散射和X射线衍射技术对样品进行了分析。通过分析Ni/SiO2样品中元素成分分布和结构随离子辐照剂量和电子能损的变化,探索了离子辐照在Ni/SiO2样品中引起的界面原子混合与结构相变现象。实验结果显示,Xe和Pb离子辐照均能引起明显的Ni原子向SiO2基体的扩散并导致界面附近Ni,Si和O原子的混合。实验观测到低剂量Xe离子辐照可产生NiSi2相,而高剂量Xe离子辐照则导致了Ni3Si和Ni O相的形成。根据热峰模型,Ni原子的扩散和新相的形成可能由沿离子入射路径强电子激发引起的瞬间热峰过程驱动。

Xe~(23+)离子辐照Al_2O_3的光谱特性

本工作研究460 keV、3 MeV和308 MeV Xe23+辐照Al2O3单晶样品的光致发光特性。从经过460 keV Xe23+辐照后样品的光致发光测试结果可看到,波长为380、413和450 nm的发光峰明显增强,在390和564 nm处出现了新的发光峰。从3 MeV的Xe23+辐照后样品谱的变化可看到,在较低剂量条件下,516 nm(2.4 eV)和564 nm(2.2 eV)处的发光峰随辐照剂量增加而增强,且当剂量增到1×1016cm-2时,564 nm处的发光峰消失,只有516 nm(2.4 eV)处的发光峰较强。从308 MeV Xe23+辐照后样品的光致发光谱中可看到,357 nm(3.47 eV)和516 nm(2.4 eV)处的发光峰随着剂量增加明显增强。辐照后样品的FTIR谱显示:波数在460~510 cm-1和630 cm-1附近的吸收是Al2O3振动模式,经离子辐照后,吸收带展宽;1 000~1 300 cm-1间为Al—O—Al桥氧键的伸缩振动模式,高能辐照后的吸收带向低波数方向移动。

基于MCGS的CSR真空连锁控制系统设计

介绍了MCGS工控组态软件,并以之构建了CSR真空连锁控制系统和系统的总体结构,相关软硬件和MCGS下设备驱动程序设计,实践证明该系统开发周期短,可靠性高,具有较好的可移植性和可扩充性。

Global iron connections between desert dust, ocean biogeochemistry, and climate

IEECAS SKLLQG

The Holocene Asian monsoon: Links to solar changes and North Atlantic climate

IEECAS SKLLQG

重离子耗散反应激发函数中的截面涨落

完成了两次独立的 1 9F + 93Nb激发函数测量;束流 1 9F8+的入射能量 1 0 0～ 1 0 8MeV,能量步长 2 5 0keV。两次测量的宏观条件完全相同,实验结果有近 1/3的相同能量点所对应的反应截面及其涨落不重复。在双核系统中引入宇称和自旋的退相干描述能量自关联函数中准周期性的衰减结构;用量子混沌运动中初始条件的极端敏感性解释截面及其涨落的不重复

重离子与X射线沿水介质入射深度诱导癌细胞失活的比较

采用Hela、B16两种细胞分别研究了X射线和重离子在水介质中入射的深度与相应细胞的存活率 (1-失活率 )。结果表明 :X射线与重离子在入射深度与细胞存活关系上有明显不同的变化规律。X射线的入射深度与其细胞存活率呈高度正相关性 ,r =0 .92 ;而重离子通过路径的细胞损伤率较小、且有一个细胞存活较高的坪区 (86 %— 92 % ) ,到射程末端细胞损伤率剧增 ,出现倒Bragg峰。提示 :重离子在深层肿瘤治疗上具有比X射线好的深度治疗分布

Photoluminescence character of Xe ion irradiated sapphire

In the present work the photoluminescence (PL) character of sapphire implanted with 180 keV Xe and irradiated with 308 MeV Xe ions was studied. The virgin, implanted and irradiated samples were investigated by PL and Fourier transform infrared (FTIR) spectra measurements. The obtained PL spectra showed the maximum emission bands at 2.75, 3.0 and 3.26 eV for the implanted fluence of 1.0 x 10(15) ions/cm(2) and at 2.4 and 3.47 eV for the irradiated fluence of 1.0 x 10(13) ions/cm(2). The FTIR spectra showed a broaden absorption band between 460 and 630 cm(-1), indicating that strong damaged region formed in Al2O3.

Modification of ZnO films under high energy Xe-ion irradiations

ZnO films were deposited on (100) Si substrate by radio frequency magnetron sputtering. These films were irradiated at room temperature with 308 MeV Xe-ions to a fluence of 1.0 x 10(12), 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2). Then the samples were investigated using RBS, XRD, FESEM and PL analyses. The obtained experimental results showed that the deposited ZnO films were highly c-axis orientated and of high purity, 308 MeV Xe-ion irradiations could not change the c-axis oriented. The topography and PL properties of the ZnO films varied with increasing the Xe-ion irradiation fluence. For 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2) irradiated samples, surface cracks were observed. Furthermore, it was found that the 1.0 x 10(14) Xe/cm(2) irradiated sample exhibiting the strongest PL ability. The modification of structure and PL properties induced by 308 MeV Xe-ion irradiations were briefly discussed. (C) 2008 Elsevier B.V. All rights reserved.

离子束辐照对玉米诱变效应的初步研究

利用兰州重离子加速器提供的12C6+和36Ar18+离子束对玉米自交系郑58、鲁9801、金象4C-1、CSR24001、308和478进行辐照诱变育种试验,探讨了重离子辐照对玉米的诱变效应。结果显示,重离子辐照后种子出苗率和成苗率根据材料不同表现不一,浸泡后种子对辐照敏感性增加。辐照后M1代叶型变异较大;M2代植株经济性状发生变异较多,产生了许多有益的突变性状;M3代部分突变性状能够稳定遗传。由此可见,重离子束辐照育种有利于品种改良和种质创新,是玉米遗传改良的一种有效手段。

Multi-phonon gamma-vibrational bands in odd-mass nuclei studied by triaxial projected shell model approach

Inspired by the recent experimental data [J.-G. Wang, et al., Phys. Lett. B 675 (2009) 420], we extend the triaxial projected shell model approach to study the gamma-band structure in odd-mass nuclei. As a first application of the new development, the gamma-vibrational structure of Nb-103 is investigated. It is demonstrated that the model describes the ground-state band and multi-phonon gamma-vibrations quite satisfactorily, supporting the interpretation of the data as one of the few experimentally-known examples of simultaneous occurrence of one- and two-gamma-phonon vibrational bands. This generalizes the well-known concept of the surface gamma-oscillation in deformed nuclei built on the ground-state in even-even systems to gamma-bands based on quasiparticle configurations in odd-mass systems. (c) 2010 Elsevier BM. All rights reserved.