利用HIRFL-CSR开展分子离子复合离解研究的可行性分析；Feasibility Analysis of Studying Dissociative Recombination Processes of Molecular Ions at HIRFL-CSR

介绍了储存环高精度分子谱学研究的科学意义、国内外研究现状和利用HIRFL-CSR开展该项研究的优势,着重论证了HIRFL-CSR分子离子注入实验环的总体设计方案和技术方案。通过在HIRFL-CSR实验环上增建一条分子离子注入线,将实验环改造成能兼顾现有物理实验和大分子物理研究的综合性研究平台,为分子离子复合离解研究提供良好的技术支撑。特别是质量数大于70的分子离子,能显著提高其能量分辨。

Theoretical study on electron impact excitation of highly charged Ne-like ions

The electron impact excitation (EIE) cross sections from the ground state to all of the 2s(2)2p(5)3l and 2s2p(6)3l(l=s, p, d) states along the Ne-like isoelectronic sequence of ions (Z = 50-57) have been calculated by using the multiconfiguration Dirac-Fock package GRASP92 and the fully relativistic distorted-wave program REIE06. In the calculations, the relativistic effects and electron correlation effects are considered systematically. Based on those calculations, the EIE cross sections along the Ne-like isoelectronic sequence of ions for different incident electron energies are discussed, and some important conclusions are drawn. We also study the influence of the correlation effects on the values of the 3C/3D line-intensity ratio [3C: (2p(1/2)3d(3/2))(1) -> 2s(2)2p(6) S-1(0), 3D: (2p(3/2)3d(5/2))(1) -> 2s(2)2p(6) S-1(0)] along the Ne-like sequence. A comparison is made between the present results and previous theoretical calculations and experimental results for the EIE cross sections in Ba-46 (+) ions, and a good agreement is obtained.

Slow highly charged ions induced electron emission from clean Si surfaces

The electron emission yields from the interaction of slow highly charged ions (SHCI) He2+, O2+ and Ne2+ with clean Si surface are measured separately. It is found that electron emission yield gamma increases proportionally to projectile kinetic energy E-p/M-p, ranging from 0.75 keV/u to 10.5 keV/u (i.e. 3.8 x 10(5) m/s <= v(p) <= 1.42 x 10(6) m/s), and it is higher for heavy ions (O2+ and Ne2+) than for light ion (He2+). For O2+ and Ne2+, gamma increases with Z(p) decreasing in our energy range, and it shows quite different from the result for higher projectile kinetic energy. After calculating the stopping power by using TRIM 2006, it is found that the fraction of secondary electrons induced by recoil atoms increases significantly at lower projectile energy, thereby leads to the differences in gamma for heavy ions O2+ and Ne2+ between lower and higher projectile kinetic energy.

反冲原子对低速离子轰击Si表面时电子发射产额的影响；Slow highly charged ions induced electron emission from clean Si surfaces

在兰州重离子加速器国家实验室电子回旋共振离子源高电荷态原子物理实验平台上,用低能(0.75keV/u≤EP/MP≤10.5keV/u,即3.8×105m/s≤vP≤1.42×106m/s)He2+,O2+和Ne2+离子束正入射到自清洁Si表面时二次电子发射产额的实验结果.结果表明电子发射产额γ近似正比于入射离子动能EP/MP.在相同动能下,γ(O)>γ(Ne)>γ(He),对于原子序数ZP比较大的O2+和Ne2+离子,ZP大者反而γ小,这与较高入射能量时的结果截然不同.通过计算不同入射能量下入射离子的阻止能损S,发现反冲原子对激发二次电子的作用随入射离子能量的降低显著增大,这正是导致在较低能量范围内二次电子发射产额与较高入射能量时存在差异的主要原因.

X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions

We utilize slow highly charged ions of Xeq+ and Pbq+ to irradiate GaN crystal films grown on sapphire substrate, and use X-ray photoelectron spectroscopy to analyze its surface chemical composition and chemical state of the elements. The results show that highly charged ions can etch the sample surface obviously, and the GaN sample irradiated by highly charged ions has N depletion or is Ga rich on its surface. Besides, the relative content of Ga-Ga bond increases as the dose and charge state of the incident ions increase. In addition, the binding energy of Ga 3d(5/2) electrons corresponding to Ga-Ga bond of the irradiated GaN sample is smaller compared with that of the Ga bulk material. This can be attributed to the lattice damage, which shifts the binding energy of inner orbital electrons to the lower end.

低速高电荷态重离子辐照的GaN晶体表面X射线光电子能谱研究；X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions

利用低速高电荷态Xeq+和Pbq+离子对在蓝宝石衬底上生长的GaN晶体膜样品进行辐照,并利用X射线光电子能谱(XPS)对样品表面化学组成和元素化合态进行了分析.结果表明,高电荷态离子对样品表面有显著的刻蚀作用;经高电荷态离子辐照的GaN样品表面氮元素贫乏而镓元素富集;随着入射离子剂量和所携带电荷数的增大,Ga—Ga键相对含量增大;辐照后,GaN样品中Ga—Ga键对应的Ga3d5/2电子的束缚能偏小,晶格损伤使内层轨道电子束缚能向低端方向偏移.

Radiosensitivity to high energy iron ions is influenced by heterozygosity for Atm, Rad9 and Brca1

Loss of function of DNA repair genes has been implicated in the development of many types of cancer. In the last several years, heterozygosity leading to haploinsufficiency for proteins involved in DNA repair was shown to play a role in genomic instability and carcinogenesis after DNA damage is induced, for example by ionizing radiation. Since the effect of heterozygosity for one gene is relatively small, we hypothesize that predisposition to cancer could be a result of the additive effect of heterozygosity for two or more genes critical to pathways that control DNA damage signaling, repair or apoptosis. We investigated the role of heterozygosity for Aim, Rad9 and Brad on cell oncogenic transformation and cell survival induced by 1 GeV/n Fe-56 ions. Our results show that cells heterozygous for both Aim and Rad9 or A tin and Brca1 have high survival rates and are more sensitive to transformation by high energy iron ions when compared with wild-type controls or cells haploinsufficient for only one of these proteins. Since mutations or polymorphisms for similar genes exist in a small percentage of the human population, we have identified a radiosensitive sub-population. This finding has several implications. First, the existence of a radiosensitive sub-population may distort the shape of the dose response relationship. Second, it would not be ethical to put exceptionally radiosensitive individuals into a setting where they may potentially be exposed to substantial doses of radiation. (C) 2010 COSPAR. Published by Elsevier Ltd. All rights reserved.

Single- and double-electron processes in collisions of Xe23+ ions with helium

We report the measurements of relative cross sections for single capture (SC), double capture (DC), single ionization (SI), double ionization (DI), and transfer ionization (TI) in collisions of Xe23+ ions with helium atoms in the velocity range of 0.65-1.32 a.u. The relative cross sections show a weak velocity dependence. The cross-section ratio of double-(DE) to single-electron (SE) removal from He, sigma(DE)/sigma(SE), is about 0.45. Single capture is the dominant reaction channel which is followed by transfer ionization, while only very small probabilities are found for pure ionization and double capture. The present experimental data are in satisfactory agreement with the estimations by the extended classical over-barrier (ECB) model..

Molybdenum L-shell X-ray production by 350-600 keV Xeq+ (q=25-30) ions

Molybdenum L-shell X-rays were produced by Xeq+ (q = 25-30) bombardment at low energies from 2.65 to 4.55 keV/amu (350-600 keV). We observed a kinetic energy threshold of Mo L-shell ionization down to 2.65-3.03 keV/amu (350-400 keV). The charge state effect of the incident ions was not observed which shows that the ions were neutralized, reaching an equilibrium charge state and losing their initial charge state memory before production of L-shell vacancies resulted in X-ray production. The experimental ionization cross sections were compared with those from Binary Encounter Approximation theory. Taking into account projectile deflection in the target nuclear Coulomb field, the ionization cross section of Mo L-shell near the kinetic energy threshold was well described. (C) 2010 Published by Elsevier B.V.

Interference Effects in Hyperfine Induced 2s2p P-3(0), P-3(2) -> 2s(2) S-1(0) Transitions of Be-like Ions

In this paper, we explored the characteristics of the interference effects between perturbative states in hyperfine induced 2s2p P-3(0), P-3(2) -> 2s(2) S-1(0) transitions of Be-like ions. It was found that the interference effects non-monotonically change with increasing atomic number Z in these two transitions. The strongest interference effect is near Z = 9 for 2s2p P-3(0), -> 2s(2) (1)S(0)transition and near Z = 7 for the other.

Enhanced nucleation of Ag nanoparticles by vacancy-type defects in Ar-ions implanted spinel

Vacancy-type defects are introduced into magnesium aluminate spine] (MgAl2O4 (1 1 0)) by Ar-ions implantation, and then Ag-ions are implanted into the depth rich in vacancy-type defects. The ultraviolet-visible spectrometry (UV-VIS) and positron annihilation spectroscopy (PAS) are used to study the influence of vacancy-type defects on nucleation of Ag nanoparticles. After introduction of vacancy-type defects the pronounced increase of surface plasmon resonance (SPR) absorbance intensity indicates that defects enhance the nucleation of Ag nanoparticles. The PAS results reveal that vacancy-type defects provide pre-nucleating centers for Ag nanoparticles nucleation and growth. (C) 2010 Elsevier B.V. All rights reserved.

Cytogenetic Effects of Low Doses of Energetic Carbon Ions on Rice After Exposures of Dry Seeds, Wet Seeds and Seedlings

In order to investigate the biological effects of heavy ion radiation at low closes and the different radiosensitivities of growing and non-growing plants. rice at different lift stages (dry seed, wet seed and seedling) were exposed to carbon ions at closes of 0 02, 0.2, 2 and 20 Gy. Radiobiological effects on survival, root growth and mitotic activity, as well as the induction of chromosome aberrations in root meristem. were observed The results show that radiation exposure induces a stimulatory response at lower close and an inhibitory response at higher dose on the mitotic activity of wet seeds and seedlings Cytogenetic damages are induced in both seeds and seedlings by carbon ion radiation at doses as low as 0.02 Gy Compared with seedlings. seeds are more resistant to the lethal damage and the growth rate damage by high doses of carbon ions, but are more sensitive to cytogenetic damage by low closes of irradiation Different types of radiation induced chromosome aberrations are observed between seeds and seedlings. Based on these results, the relationships between low close heavy ion-induced biological effects and the biological materials are discussed.

Color center formation in silica glass induced by high energy Fe and Xe ions

Silica glass samples were implanted with 1.157 GeV Fe-56 and 1.755 GeV Xe-136 ions to fluences range from 1 x 10(11) to 3.8 x 10(12) ions/cm(2). Virgin and irradiated samples were investigated by ultraviolet (UV) absorption from 3 to 6.4 eV and photoluminescence (PL) spectroscopy. The UV absorption investigation reveals the presence of various color centers (E' center, non-bridging oxygen hole center (NBOHC) and ODC(II)) appearing in the irradiated samples. It is found that the concentration of all color centers increase with the increase of fluence and tend to saturation at high fluence. Furthermore the concentration of E' center and that of NBOHC is approximately equal and both scale better with the energy deposition through processes of electronic stopping, indicating that E' center and NBOHC are mainly produced simultaneously from the scission of strained Si-O-Si bond by electronic excitation effects in heavy ion irradiated silica glass. The PL measurement shows three emissions peaked at about 4.28 eV (alpha band), 3.2 eV (beta band) and 2.67 eV (gamma band) when excited at 5 eV. The intensities of alpha and gamma bands increase with the increase of fluence and tend to saturation at high fluence. The intensity of beta band is at its maximum in virgin silica glass and it is reduced on increasing the ions fluence. It is further confirmed that nuclear energy loss processes determine the production of alpha and gamma bands and electronic energy loss processes determine the bleaching of beta band in heavy ion irradiated silica glass. (c) 2009 Elsevier B.V. All rights reserved.

Atomic Structures and Radiative Properties of He-like Ions in Debye Plasmas

A detailed investigation of plasma screening effects on atomic structure and transition properties are presented for He-like ions embedded in dense plasma environment. Multi-configuration Dirac-Fock calculations were carried out for these ions by considering a Debye-Huckel potential. A large-scale relativistic configuration-interaction method is adopted to calculate transition energies and transition probabilities and to allow for a systematic improvement of the calculations. Comparison of the presently calculated results with others, when available, is made.

80 MeV/u C-12离子诱变选育PHB高产菌株；A strain of high PHB output by mutagenesis of 80 MeV/u C-12 ions

用80MeV/u12C6+离子对一株积累聚β-羟基丁酸酯(PHB)的芽孢杆菌(BacillusP-9)进行诱变选育,最终获得PHB高产株菌G15,其PHB产量达2.93g/L,与出发菌株相比较,PHB积累量提高了1.5倍。研究结果表明,本试验辐照最佳剂量为15Gy。重离子辐照诱变育种效果显著,具有广阔的发展应用前景。