Polyamide thin film composite membranes prepared from isomeric biphenyl tetraacyl chloride and m-phenylenediamine

Three novel of isomeric tetra-functional biphenyl acid chloride: 3,3',5,5'-biphenyl tetraacyl chloride (mm-BTEC), 2,2',4,4'-biphenyl tetraacyl chloride (om-BTEC), and 2,2',5,5'-biphenyl tetraacyl chloride (op-BTEC) were synthesized, and used as new monomers for the preparation of the thin film composite (TFC) reverse osmosis (RO) membranes through interfacial polymerization with m-phenylenediamine (MPDA). The results of membrane performance test showed that membranes prepared from om-BTEC and op-BTEC had higher flux at the expanse of rejection compared with membranes prepared from mm-BTEC.

Square lamellar structure having phase-separated microdomain in H-shaped block copolymer thin film

The morphology of a H-shaped block copolymer (poly(ethylene glycol) backbone and polystyrene branches (PS)(2)PEG(PS)(2)) in a thin film has been investigated. A peculiar square lamella that has a phase-separated microdomain at its surface is obtained after spin coating. The experimental temperature plays a critical role in the lamellar formation. The copolymer first self-assembles into square lamellar micelles with an incomplete crystalline core due to the crystallizability of PEG.

Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors

Copper phthalocyanine organic thin-film transistors (OTFTs) were fabricated with top-gate geometry and the effects of different gate dielectrics on the transport proper-ties in OTFTs were studied. The mobility was found to be gate voltage dependent and the results showed that besides the charge density in the accumulation layer, the energetic disorder induced by gate dielectrics played an important role in determining the field-effect mobility in OTFTs.

Fabrication of an integrated pixel with an organic light-emitting diode driven by copper phthalocyanine organic thin film transistors

An organic integrated pixel with organic light-emitting diodes (OLEDs) driven by organic thin film transistors (OTFTs) is fabricated by a greatly simplified processing. The OTFTs are based on copper phthalocyanine as the active medium and fabricated on indium-tin-oxide (ITO) glass with top-gate structure, thus an organic integrated pixel is easily made by integrating OLED with OTFT. The OTFTs show field-effect mobility of 0.4 cm(2) /Vs and on/off ratio of 10(3) order. The OLED is driven well and emits the brightness as large as 2100cd/m(2) at a current density of 14.6 mu A/cm(2) at -19.7 V gate voltage. This simple device structure is promising in the future large-area flexible OLED displays.

Ultrathin-film growth of para-sexiphenyl (II): Formation of large-size domain and continuous thin film

The large-size domain and continuous para-sexiphenyl (p-6P) ultrathin film was fabricated successfully on silicon dioxide (SiO2) substrate and investigated by atomic force microscopy and selected area electron diffraction. At the optimal substrate temperature of 180 degrees C, the first-layer film exhibits the mode of layer growth, and the domain size approaches 100 mu m(2). Its saturated island density (0.018 mu m(-2)) is much smaller than that of the second-layer film (0.088 mu m(-2)), which begins to show the Volmer-Weber growth mode.

Ultrathin-film growth of para-sexiphenyl (I): Submonolayer thin-film growth as a function of the substrate temperature

The para-sexiphenyl (p-6P) monolayer film induces weak epitaxy growth (WEG) of disk-like organic semiconductors, and their charge mobilities are increased dramatically to the level of the corresponding single crystals [Wang et al., Adv. Mater. 2007, 19, 2168]. The growth behavior and morphology of p-6P monolayer film play decisive roles on WEG. Here, we investigated the growth behavior of p-6P submonolayer film as a function of the substrate temperature. Its growth exhibited two different mechanisms at high and low substrate temperature.

Carbon nanotube/gold nanoparticles/polyethylenimine-functionalized ionic liquid thin film composites for glucose biosensing

A novel glucose biosensor based on immobilization of glucose oxidase (GOD) in thin films of polyethylenimine-functionalized ionic liquid (PFIL), containing a mixture of carbon nanotubes (CNT) and gold nanoparticles (AuNPs) and deposited on glassy carbon electrodes, was developed. Direct electrochemistry of glucose oxidase in the film was observed, with linear glucose response up to 12 mM. The PFIL-stabilized gold nanoparticles had a diameter of 2.4 +/- 0.8 nm and exhibited favorable stability (stored even over one month with invisible change in UV-vis spectroscopic measurements).

Order-Order Transition of C -> sdG -> sL -> S in ABC Triblock Copolymer Thin Film Induced by Solvent Vapor

The morphology transition of polystyrene-block-poly(butadiene)-block-poly(2-vinylpyridine) (SBV) triblock thin film induced in benzene vapor showing weak selectivity for PS is investigated. The order-order transitions (OOT) in the sequence of core-shell cylinders (C), sphere in 'diblock gyroid' (sdG), sphere in lamella (sL) and sphere (S) are observed. The projection along (111) direction in Gyroid phase (sdG(111)) is found to epitaxially grow from C(001) in the film.

Very low hysteresis organic thin-film transistors

Very low hysteresis vanadyl-phthalocyanine/para-sexiphenyl thin-film transistors (TFTs) have been fabricated using benzocyclobutenone (BCBO) derivatives/tantalum pentoxide (Ta2O5)/BCBO triple gate dielectrics. The field effect mobility, on/off current ratio and threshold voltage of organic TFTs are 0.45 cm(2) V-1 s(-1), 3.5 x 10(4) and -6.8 V, respectively. To clarify the mechanism of hysteresis, devices with different dielectrics have been studied. It is found that the bottom BCBO derivatives (contact with a gate electrode) block the electron injection from a gate electrode to dielectrics.

Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator

Organic thin-film transistors (OTFTs) using high dielectric constant material tantalum pentoxide (Ta2O5) and benzocyclobutenone (BCBO) derivatives as double-layer insulator were fabricated. Three metals with different work function, including Al (4.3 eV), Cr (4.5 eV) and Au (5.1 eV), were employed as gate electrodes to study the correlation between work function of gate metals and hysteresis characteristics of OTFTs. The devices with low work function metal Al or Cr as gate electrode exhibited high hysteresis (about 2.5 V threshold voltage shift). However, low hysteresis (about 0.7 V threshold voltage shift) OTFTs were attained based on high work function metal Au as gate electrode.

The first liquid crystalline phthalocyanine derivative capable of edge-on alignment for solution processed organic thin-film transistors

Tetraoctyl-substituted vanadyl phthalocyanine (OVPc4C8) as a new NIR-absorbing discotic liquid crystalline material can form highly ordered thin films with edge-on alignment of the molecules and molecular packing mode identical to that in the phase II of OVPc for solution processed OTFTs with mobility up to 0.017 cm(2) V-1 s(-1).

Autophobic Dewetting of a Poly(methyl methacrylate) Thin Film on a Silicon Wafer Treated in Good Solvent Vapor

The wettability of thin poly(methyl methacrylate) (PMMA) films on a silicon wafer with a native oxide layer exposed to solvent vapors is dependent on the solvent properties. In the nonsolvent vapor, the film spread on the substrate with some protrusions generated on the film surface. In the good solvent vapor, dewetting happened. A new interface formed between the anchored PMMA chains and the swollen upper part of the film. Entropy effects caused the upper movable chains to dewet on the anchored chains. The rim instability depended on the surface tension of solvent (i.e., the finger was generated in acetone vapor (gamma(acetone) = 24 mN/m), not in dioxane vapor (gamma(dioxane) = 33 mN/m)). The spacing (lambda) that grew as an exponential function of film thickness h scaled as similar to h(1.31) whereas the mean size (D) of the resulting droplets grew linearly with h.

Organic Thin-Film Transistor Memory With Nanoparticle Floating Gate

Organic thin-film transistor memory devices were realized by inserting a layer of nanoparticles (such as Ag or CaF2) between two Nylon 6 gate dielectrics as the floating gate. The transistor memories were fabricated on glass substrates by full thermal deposition. The transistors exhibit significant hysteresis behavior in current-voltage characteristics, due to the separated Ag or CaF2 nanoparticle islands that act as charge trap centers. The mechanism of the transistor memory operation was discussed.

Solvent-induced Morphology of the Binary Mixture of Diblock Copolymer in Thin Film: The Block Length and Composition Dependence of Morphology

A series of binary SB blend samples with various overall volume fraction of PS (Phi(PS)) and different discrete distribution of the block length (denoted as d(PS) or d(PB)) were prepared by mixing various asymmetric poly(styrene)-block-poly(butadiene) (SB) block copolymers with a symmetric SB block copolymer. The influences of the external solvent field, composition, and the block length distribution on the morphologies of the blends in the thin films were investigated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The experimental results revealed that after solvent annealing, the interface of the blend thin films depended mainly on the cooperative effects of the annealing solvent and the inherently interfacial curvature of the blends. Upon exposure to the saturated vapor of cyclohexane, which has preferential affinity for the PB block, a "threshold" of Phi(PS) (approximate 0.635-0.707) was found. Below such threshold, the influence of the annealing solvent played an important role on the interfacial curvature of the blend thin film.

Bilayer Photoresist Insulator for High Performance Organic Thin-Film Transistors on Plastic Films

A novel bilayer photoresist insulator is applied in flexible vanadyl-phthalocyanine (VOPc) organic thin-film transistors (OTFTs). The micron-size patterns of this photoresisit insulator can be directly defined only by photolithography without the etching process. Furthermore, these OTFTs exhibit high field-effect mobility (about 0.8 cm(2)/Vs) and current on/off ratio (about 10(6)). In particular, they show rather low hysteresis (< 1 V). The results demonstrate that this bilayer photoresist insulator can be applied in large-area electronics and in the facilitation of patterning insulators.