Thickness And Component Distributions Of Yttrium-Titanium Alloy Films In Electron-Beam Physical Vapor Deposition

Thickness and component distributions of large-area thin films are an issue of international concern in the field of material processing. The present work employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal resonators, deposited film thickness distribution measured by Rutherford backscattering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.

Frequency of insecticide spray application for control of fall armyworm (Lepidóptera: Noctuidae) on sorghum

Existe desconocimiento del efecto de frecuencias de aplicación de los insecticidas sobre el comportamiento de las poblaciones del gu· sano cogollero ( Spodoptera frugipercta) y la repercusión de estas en los rendimientos del sorgo granifero (Sorghum bicolor l. Moench). El estudio se realizó en la Estación Experimental dos del Centro Nacional de Tecnología Agropecuaria y Forestal (CENTA), ubicado en San Andrés, departamento de La Libertad, El Salvador, durante los meses de septiembre del año 2001 y enero de 2002. El objetivo de la investigación fue determinar el efecto del numero de aplicaciones de clorpirifos sobre las poblaciones de larvas de gusano cogollero en el cultivo del sorgo. Para este ensayo se estableció un diseño de bloques al azar con cinco tratamientos y cuatro repeticiones. Se realizaron aplicaciones de Chlorpyrifos en el cultivo del sorgo, en dosis de 1.4 1 ha·1, en 285 1 de agua durante cuatro fechas (4 estados de desarrollo de la planta), específicamente a los 15, 25, 35 y 45 días después de la siembra. Las parcelas contratamientos recibieron 1 , 2, 3 y 4 aplicaciones de insecticidas y fueron comparadas con una parcela sin aplicación. Cada tratamiento insecticida inicialmente tuvo reducciones significativas en las poblaciones de cogollero, comparados con la parcela sin aplicación. Tratamientos con cada aplicación adicional tuvo reducciones significativas en las poblaciones de larvas vivas, comparados con tratamientos que tuvieron menor numero de aplicaciones. El cogollero, tuvo reinfestaciones, en las parcelas que recibieron ya sea una, dos o tres aplicaciones de insecticidas, durante el periodo de observación después de cada uno de los tres tratamientos. Estos resultados muestran las reinfecciones de las poblaciones de cogollero después de las aplicaciones de insecticidas, y la carencia de efecto residual de los mismos. A pesar de que no se determinaron diferencias significativas en el rendimiento de grano, las diferencias numéricas oscilaron desde 555 a 1 674 kg ha·1 mas allá del rendimiento observado en el tratamiento sin aplicación, lo cual sugiere que el manejo efectivo del daño ocasionado por el cogollero en el cultivo de sorgo, puede resultar en mejora de los rendimientos.

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

Mn implanted GaAs by low energy ion beam deposition

High dose Mn was implanted into semi-insulating GaAs substrate to fabricate embedded ferromagnetic Mn-Ga binary particles by mass-analyzed dual ion beam deposit system at room temperature. The properties of as-implanted and annealed samples were measured with X-ray diffraction, high-resolution X-ray diffraction to characterize the structural changes. New phase formed after high temperature annealing. Sample surface image was observed with atomic force microscopy. All the samples showed ferromagnetic behaviour at room temperature. There were some differences between the hysteresis loops of as-implanted and annealed samples as well as the cluster size of the latter was much larger than that of the former through the surface morphology. (C) 2004 Elsevier B.V. All rights reserved.

FexSi grown with mass-analyzed low-energy dual ion beam deposition

Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. Auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35 nm thick FexSi films. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400degreesC. There are no new phases formed. Carrier concentration depth profile of annealed sample was measured by Electrochemical C-V method and indicated that FexSi film shows n-type conductivity while silicon substrate is p-type. The p-n junction is formed between FexSi film and silicon substrate showing rectifying effect. (C) 2003 Elsevier B.V. All rights reserved.