Comparative studies on the canning properties of pomfrets and hilsa

Fresh silver pomfret, black pomfret and hilsa were canned at absolutely fresh and iced conditions and the qualities of the final products were studied comparatively in relation to the initial quality of the raw materials. Under identical conditions a maximum quantity of cook-drip and nitrogen contents were found to be lost in black pomfret and minimum in hilsa. Silver pomfret and black pomfret iced for 3 days gave fairly good products on canning while hilsa came out only as a satisfactory product on canning after the same ice storage period of the raw material.

Microwave power effects on the properties of phosphorus-doped SiC:H films prepared using ECR-CVD

There has been a growing interest in hydrogenated silicon carbide films (SiC:H) prepared using the electron cyclotron resonance-chemical vapour deposition (ECR-CVD) technique. Using the ECR-CVD technique, SiC:H films have been prepared from a mixture of methane, silane and hydrogen, with phosphine as the doping gas. The effects of changes in the microwave power (from 150 to 900 W) on the film properties were investigated in a series of phosphorus-doped SiC:H films. In particular, the changes in the deposition rate, optical bandgap, activation energy and conductivity were investigated in conjunction with results from Raman scattering and Fourier transform infra-red (FTIR) analysis. It was found that increase in the microwave power has the effect of enhancing the formation of the silicon microcrystalline phase in the amorphous matrix of the SiC:H films. This occurs in correspondence to a rapid increase in the conductivity and a reduction in the activation energy, both of which exhibit small variations in samples deposited at microwave powers exceeding 500 W. Analysis of IR absorption results suggests that hydrogen is bonded to silicon in the Si-H stretching mode and to carbon in the sp3 CHn rocking/wagging and bending mode in films deposited at higher microwave powers.

Effect of water on mechanical properties of mineralized tissue composites

In the current study, the effects of polar solvents on tissue volume and mechanical properties are considered. Area shrinkage measurements are conducted for mineralized bone tissue samples soaked in polar solvents. Area shrinkage is used to calculate approximate linear and volume shrinkage. Results are compared with viscoelastic mechanical parameters for bone in the same solvents (as measured previously) and with both shrinkage measurements and mechanical data for nonmineralized tissues, as taken from the existing literature. As expected, the shrinkage of mineralized tissues is minimal when compared with shrinkage of nonmineralized tissues immersed in the same polar solvents. The mechanical changes in bone are also substantially less than in nonmineralized tissues. The largest stiffness values are found in shrunken bone samples (immersed in acetone and ethanol). The mineral phase in bone thus resists tissue shrinkage that would otherwise occur in the pure soft tissue phase. © 2007 Materials Research Society.

Effects of gelatin on mechanical properties of hydroxyapatite-gelatin nano-composltes

A biomimetic reactor has been developed to synthesize hydroxyapatite- gelatin (HAP-GEL) nanocomposites that mimic ultra-structures of natural bone. We hypothesize that in the reactor, gelatin concentration controls morphology and packing structures of HAP crystals. To test the hypothesis, three types of mechanical tests were conducted, including nanoindentation, compression, and fracture tests. Nanoindentation tests in conjunction with computer modeling were used to assess effects on gelatin-induced microstructures of HAP. The results showed that increasing gelatin content increased both the plane strain modulus and the fracture toughness. The gelatin appeared to shorten the HAP crystal distance, which consolidated the internal structure of the composite and made the material more rigid. The fracture toughness KIC increased partially due to the effect of fiber bridging between gelatin molecules. The highest fracture toughness (1.12 MPa·1/2) was equivalent to that of pure hydroxyapatite. The compressive strength of the HAP-GEL (107.7±26.8 MPa) was, however, less sensitive to microstructural changes and was within the range of natural cortical bone (human 170 MPa, pig: 100 MPa). The compression strength was dominated by void inclusions while the nanoindentation response reflected ultra-structural arrangement of the crystals. The gelatin concentration is likely to modify crystal arrangement as demonstrated in TEM experiments but not void distribution at macroscopic levels. © 2006 Materials Research Society.

Effects of silicon addition on the electrical and magnetic properties of copper-doped (La,Ca)MnO3 compounds

In this paper we report about the electrical properties of La 0.7Ca0.3MnO3 compounds substituted by copper on the manganese site and/or deliberately contaminated by SiO2 in the reactant mixture. Several phenomena have been observed and discussed. SiO2 addition leads to the formation of an apatite-like secondary phase that affects the electrical conduction through the percolation of the charge carriers. On the other hand, depending on the relative amounts of copper and silicon, the temperature dependence of the electrical resistivity can be noticeably modified: our results enable us to compare the effects of crystallographic vacancies on the A and B sites of the perovskite with the influence of the copper ions substituted on the manganese site. The most original result occurs for the compounds with a small ratio Si/Cu, which display double-peaked resistivity vs. temperature curves. © 2003 Elsevier B.V. All rights reserved.

Mechanical and fracture properties of cement-based bi-materials after thermal cycling

This study investigates the effect of thermal cycles on the fracture properties of the cement-based bi-materials. Sixty eight cubes were exposed to a varied number of 24-hour thermal cycles ranging from 0 to 90 and subsequently were tested in a wedge splitting configuration. The mechanical and fracture properties of normal strength and high strength concretes are substantially improved after 30 thermal cycles, but less so after 90 thermal cycles both in isolation and when bonded to an ultra high-performance fibre-reinforced cement-based composite. © 2009 Elsevier Ltd. All rights reserved.

Substrate treatment and drying conditions effect on the properties of roll-to-roll gravure printed PEDOT:PSS thin films

The optical, structural and electrical properties of poly(3,4- ethylenedioxythiophene):poly(4-styrenesulfonic acid) (PEDOT:PSS) thin films printed by roll-to-roll gravure have been investigated. Corona treatment has been applied to enhance the adhesion of PEDOT:PSS on PolyEthylene Terephthalate (PET) web. It has been found that there was a stronger in-depth surface modification of PET with the increase of corona efficiency; however, the adhesion of PEDOT:PSS was not actually affected. Also, Spectroscopic Ellipsometry and Atomic Force Microscopy have been used to extract information on the mechanisms that define PEDOT:PSS properties. The increase of the drying temperature of the PEDOT:PSS films has been found to reduce the remaining water inside the films and lead to the decrease of the PEDOT:PSS particles size. © 2011 Elsevier B.V. All rights reserved.

Mechanical and tribological properties of epitaxial cubic boron nitride thin films grown on diamond

电子邮箱nataliya.deyneka@uni-ulm.de

Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy

A series of metamorphic high electron mobility transistors (MMHEMTs) with different V/III flux ratios are grown on GaAs (001) substrates by molecular beam epitaxy (XIBE). The samples are analysed by using atomic force microscopy (AFM), Hall measurement, and low temperature photoluminescence (PL). The optimum V/III ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square (RMS) roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm(2)/(V.s) and 3.26 x 10(12)cm(-2) respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In0.53Ga0.47 As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the V/III ratio, for which the reasons are discussed.

The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates

Si-doped nonpolar a-plane GaN films were grown on nanopatterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (MOCVD) system. The structure, morphology and field emission properties of the sample were studied by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and field emission measurement. The XRD analysis shows that the sample is a nonpolar a-plane (11 (2) over bar0) GaN film. The field emission measurement shows that the nonpolar GaN films exhibit excellent field emission properties with a threshold emission field of as low as 10 V/mu m at a current density of 0.63 mu A/cm(2), and a high field emission current density of 74 mA/cm(2) at an applied field of 24 V/mu m. Moreover, the Fowler-Nordheirn plot of the sample fits a near linear relation. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Effects of crystalline quality on the ultraviolet emission and electrical properties of the ZnO films deposited by magnetron sputtering

The ZnO films were deposited on c-plane sapphire, Si (0 0 1) and MgAl2O4 (1 1 1) substrates in pure Ar ambient at different substrate temperatures ranging from 400 to 750 degrees C by radio frequency magnetron sputtering. X-ray diffraction, photoluminescence and Hall measurements were used to evaluate the growth temperature and the substrate effects on the properties of ZnO films. The results show that the crystalline quality of the ZnO films improves with increasing the temperature up to 600 degrees C, the crystallinity of the films is degraded as the growth temperature increasing further, and the ZnO film with the best crystalline quality is obtained on sapphire at 600 degrees C. The intensity of the photoluminescence and the electrical properties strongly depend on the crystalline quality of the ZnO films. The ZnO films with the better crystallinity have the stronger ultraviolet emission, the higher mobility and the lower residual carrier concentration. The effects of crystallinity on light emission and electrical properties, and the possible origin of the n-type conductivity of the undoped ZnO films are also discussed. (C) 2009 Elsevier B. V. All rights reserved.

Impacts of hydrogen dilution on growth and optical properties of a-SiC : H films

Hydrogenated amorphous silicon-carbon (a-SiC:H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) with a fixed methane to silane ratio ([CH4]/[SiH4]) of 1.2 and a wide range of hydrogen dilution (R-H=[H-2]/[SiH4 + CH4]) values of 12, 22, 33, 102 and 135. The impacts of RH on the structural and optical properties of the films were investigated by using UV-VIS transmission, Fourier transform infrared (FTIR) absorption, Raman scattering and photoluminescence (PL) measurements. The effects of high temperature annealing on the films were also probed. It is found that with increasing hydrogen dilution, the optical band gap increases, and the PL peak blueshifts from similar to1.43 to 1.62 eV. In annealed state, the room temperature PL peak for the low R-H samples disappears, while the PL peak for the high R-H samples appears at similar to 2.08 eV, which is attributed to nanocrystalline Si particles confined by Si-C and Si-O bonds.

Influence of the rapid thermal annealing on the properties of thin a-Si films

The variation of the structure, morphology and the electrical properties of thin amorphous silicon films caused by Rapid Thermal Annealing is studied. The films annealed at 1200degreesC for 2 minutes change their structure to polycrystalline and as a result their resistivity decreases by 4 orders of magnitude. Due to the small thickness of the as deposited amorphous silicon the obtained poly-Si is strongly irregular and has many discontinuities in its texture.

Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

Metal-semiconductor-metal (MSM) structures were fabricated by RF-plasma-assisted MBE using different buffer layer structures. One type of buffer structure consists of an AlN high-temperature buffer layer (HTBL) and a GaN intermediate temperature buffer layer (ITBL), another buffer structure consists of just a single A IN HTBL. Systematic measurements in the flicker noise and deep level transient Fourier spectroscopy (DLTFS) measurements were used to characterize the defect properties in the films. Both the noise and DLTFS measurements indicate improved properties for devices fabricated with the use of ITBL and is attributed to the relaxation of residue strain in the epitaxial layer during growth process. (C) 2003 Elsevier Ltd. All rights reserved.