941 resultados para CRYSTALLINE SILICON


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This article presented physicochemical characterization and rheological behavior evaluation of the liquid crystalline mesophases developed with different silicones. There were prepared 5 ternary systems, which were carried out the determination of the relative density, the electric conductivity and polarized light microscopy analysis, being selected two systems to promote the Preliminary Stability Tests. The results showed that System 1 obtained the major liquid crystal formation and a higher stability. The temperature influences in the systems stability and phases structure. In hot oven, observed oneself the mixture of lamellar and hexagonal phase, for both systems.

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DEVELOPMENT of LIQUID-CRYSTALLINE SYSTEMS USING SILICON GLYCOL COPOLYMER and POLYETHER FUNCTIONAL SILOXANE. For the construction of the phase diagrams, the method of the aqueous titration was used. There were prepared 5 ternary diagrams, varying the surfactant and the oil phase. The liquid-crystalline phases were identified by polarized light microscopy. The formulations prepared with silicon glycol copolymer, polyether functional siloxane (PFS) and water (S(1)) and with diisopropyl adipate, PFS and water (S(4)) presented liquid-crystalline phases with lamellar arrangement. Moreover, after 15 days in hot oven (37 degrees C), the formulations presented hexagonal arrangement, evidencing the influence of the temperature in the organization of the system.

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In this work we deposit via non-reactive magnetron sputtering of radio-frequency nanofilmes of nitreto of aluminum(AlN). The nanofilms aluminum nitride are semiconductors materials with high thermal conductivity, high melting point, piezoelectricity and wide band gap (6, 2 eV) with hexagonal wurtzite crystal structure, belonging to the group of new materials called III-V nitrides in which together with the gallium nitride and indium nitride have attracted much interest because they have physical and chemical properties relevant to new technological applications, mainly in microelectronic and optoelectronic devices. Three groups were deposited with thicknesses nanofilms time dependent on two substrates (glass and silicon) at a temperature of 25 ° C. The nanofilms AlN were characterized using three techniques, X-ray diffraction, Raman spectroscopy and atomic force microscopy (AFM), examined the morphology of these. Through the analysis of X-rays get the thickness of each sample with its corresponding deposition rate. The analysis of X-rays also revealed that nanofilms are not crystalline, showing the amorphous character of the samples. The results obtained by the technique, atomic force microscopy (AFM) agree with those obtained using the technique of X-rays. Characterization by Raman spectroscopy revealed the existence of active modes characteristic of AlN in the samples

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Surfaces of silicon wafers implanted with N and C, respectively, and aluminum 5052 implanted with N alone by plasma immersion ion implantation WHO were probed by a nanoindentor and analyzed by the contact-angle method to provide information on surface nanohardness and wettability. Silicon nitride and silicon carbide are important ceramic materials for microelectronics, especially for high-temperature applications. These compounds can be synthesized by high-dose ion implantation. The nanohardness of a silicon sample implanted with 12-keV nitrogen PIII (with 3 X 10(17) cm(-2) dose) increased by 10% compared to the unimplanted sample, in layers deeper than the regions where the formation of the Si,N, compound occurred. A factor of 2.5 increase in hardness was obtained for C-implanted Si wafer at 35 keV (with 6 X 10(17) cm(-2) dose), again deeper than the SiC-rich layer, Both compounds are in the amorphous state and their hardness is much lower than that of the crystalline compounds, which require an annealing process after ion implantation. In the same targets, the contact angle increased by 65% and 35% for N- and C-implanted samples, respectively. Compared to the Si target, the nitrogen PIII-irradiated Al 5052 (wish 15 keV) showed negligible change in its hydrophobic character after ion implantation. Its near-surface nanohardness measurement showed a slight increase for doses of 1 X 10(17) cm(-2). We have been searching for an AlN layer of the order of 1000 A thick, using such a low-energy PIII process, but oxide formation during processing has precluded its synthesis. (C) 2002 Elsevier B.V. B.V. All rights reserved.

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Silicon carbide (SiC) has been employed in many different fields such as ballistic armor, thermal coating, high performance mirror substrate, semiconductors devices, among other things. Plasma application over the silicon carbide ceramics is relatively recent and it is able to promote relevant superficial modifications. Plasma expander was used in this work which was supplied by nitrogen and switched by a capacitor bank. Nitrogen plasma was applied over ceramic samples for 20 minutes, in a total medium of 1440 plasma pulses. SiC ceramics were produced by uniaxial pressing method (40 MPa) associated to isostatic pressing (300 MPa) and sintered at 1950 degrees C under argon gas atmosphere. Silicon carbide (beta-sic - BF-12) supplied by HC-Starck and sintering additive (7.6% YAG - Yttrium Aluminum Garnet) were used in order to obtain the ceramics. Before and after the plasma application, the samples were characterized by SEM, AFM, contact angle and surface energy measurement.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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The present work reports the study of nanoporous structures, aiming at their use in research directed to the current demand of the petroleum industry to value heavy oil. Initially, two ways were chosen for the synthesis of porous structures from the molecular sieves of type Si-MCM-41. In the first way, the structure MCM-41 is precursory for heteroatom substitutes of silicon, generating catalyst of the type Al-MCM-41 from two different methods of incorporation of the metal. This variation of the incorporation method of Aluminum in the structure of Si-MCM-41 was carried out through the conventional procedure, where the aluminum source was incorporated to the gel of synthesis, and the procedure post-synthesis, where the Aluminum source was incorporated in catalyst after the synthesis of Si-MCM-41. In the second way, the MCM-41 acts as a support for growth of nanocrystals of zeolite embedded in their mesoporous, resulting in hybrid MCM-41/ZSM-5 catalyst. A comparative analysis was carried through characterizations by XRD, FTIR, measures of acidity through n-butylamine adsorption for TGA, SEM-XRF and N2 adsorption. Also crystalline aluminosilicate with zeolitic structure MFI of type ZSM-5 was synthesized without using organic templates. Methodologies to the preparation of these materials are related by literature using conventionally reactants that supply oxides of necessary silicon and aluminum, as well as a template agent, and in some cases co-template. The search for new routes of preparation for the ZSM-5 aimed at, above all, the optimization of the same as for the time and the temperature of synthesis, and mainly the elimination of the use of organic templates, that are material of high cost and generally very toxic. The current study is based on the use of the H2O and Na+ cations playing the role of structural template and charge compensation in the structure. Characterizations by XRD, FTIR, SEM-XRF and N2 adsorption were also conducted for this material in order to compare the samples of ZSM-5 synthesized in the absence of template and those used industrially and synthesized using structuring

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)