Twentyfold blue upconversion emission enhancement through thermal effects in Pr3+/Yb3+-codoped fluoroindate glasses excited at 1.064 mu m

Infrared-to-visible upconversion emission enhancement through thermal effects in Yb3+-sensitized Pr3+-doped fluoroindate glasses excited at 1.064 mu m is investigated. A twentyfold increase in the 485 nm blue emission intensity as the sample temperature was varied from 20 to 260 degrees C was observed. The visible upconversion fluorescence enhancement is ascribed to the temperature dependent multiphonon-assisted anti-Stokes excitation of the ytterbium sensitizer and excited-state absorption of the praseodymium acceptor. A model based upon conventional rate equations considering a temperature dependent effective absorption cross section for the F-2(7/2)-->F-2(5/2) transition of the Yb3+ and (1)G(4)-->P-3(0) excited-state absorption of the Pr3+, agrees very well with the experimental results. (C) 2000 American Institute of Physics. [S0021-8979(00)08209-8].

Decay of photo-excited conductivity of Er-doped SnO2 thin films

Er-doped SnO2 thin films, obtained by sol-gel-dip-coating technique, were submitted to excitation with the 4th harmonic of a Nd:YAG laser (266 nm), at low temperature, and a conductivity decay is observed when the illumination is removed. This decay is modeled by considering a thermally activated cross section of an Er-related trapping center. Besides, grain boundary scattering is considered as dominant for electronic mobility. X-ray diffraction data show a characteristic profile of nanoscopic crystallite material (grain average size approximate to 5 nm) in agreement with this model. Temperature dependent and concentration dependent decays are measured and the capture barrier is evaluated from the model, yielding 100 meV for SnO2:0.1% Er and 148 meV for SnO2:4% Er.

Elastic scattering and the proton form factor

We use the QCD pomeron model proposed by Landshoff and Nachtmann to compute the differential and the total cross-sections for pp scattering in order to discuss a QCD-based approach to the proton form factor. This model is quite dependent on the experimental electromagnetic form factor, and it is not totally clear why this form factor gives good results even at moderate transferred momentum. We exchange the electromagnetic form factor by the asymptotic QCD proton form factor determined by Brodsky and Lepage (BL) plus a prescription for its low energy behavior dictated by the existence of a dynamically generated gluon mass. We fit the data with this QCD inspired form factor and a value for the dynamical gluon mass consistent with the ones determined in the literature. Our results also provide a determination of the proton wave function at the origin, which appears in the BL form factor.

Is the equivalence principle doomed forever to Dante's Inferno on account of quantum mechanics?

It is commonly assumed that the equivalence principle can coexist without conflict with quantum mechanics. We shall argue here that, contrary to popular belief, this principle does not hold in quantum mechanics. We illustrate this point by computing the second-order correction for the scattering of a massive scalar boson by a weak gravitational field, treated as an external field. The resulting cross-section turns out to be mass-dependent. A way out of this dilemma would be, perhaps, to consider gravitation without the equivalence principle. At first sight, this seems to be a too much drastic attitude toward general relativity. Fortunately, the teleparallel version of general relativity - a description of the gravitational interaction by a force similar to the Lorentz force of electromagnetism and that, of course, dispenses with the equivalence principle - is equivalent to general relativity, thus providing a consistent theory for gravitation in the absence of the aforementioned principle. © World Scientific Publishing Company.

Gluon saturation and proton - Anti-proton cross sections

We study proton - anti-proton cross sections in the framework of an updated minijet eikonal model. We propose a different scheme for fixing the parameters, in which we make use of the measured minijet cross section. We compare the results obtained with the GRV98, MRST98, CTEQ6-L and KLN gluon distributions. The latter includes gluon saturation effects. We conclude that in the very high energy regime the use of the KLN distribution improves significantly the behavior of the cross sections. However this improvement is due to the shape of the KLN gluon density and has little to do with saturation effects.

Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films

Optical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the saturation limit. The excitation is done with an intensity-controlled halogen-tungsten lamp through an interference filter, yielding an excitation wavelength of 513nm, 9 nm wide (width at half intensity peak). Irradiation at low temperature (25K) yields a conductivity increase much lower than above bandgap light. Such a behavior assures the ionization of intra-bandgap defect levels, since the filter does not allow excitation of electron-hole pairs, what would happen only in the UV range (below about 350nm). The decay of intra-bandgap excited levels in the range 250-320 K is recorded, leading to a temperature dependent behavior related to a thermally excited capture cross section for the dominating defect level. © 2008 American Institute of Physics.

Measuring and analyzing color and texture information in anatomical leaf cross sections: An approach using computer vision to aid plant species identification

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Decay of photo-induced conductivity in Sb-doped SnO2 thin films, using monochromatic light of about bandgap energy

Doping tin dioxide (SnO2) with pentavalent Sb5+ ions leads to an enhancement in the electrical conductivity of this material, because Sb5+ substitutes Sn4+ in the matrix, promoting an electronic density increase in the conduction band, due to the donor-like nature of the doping atom. Results of computational simulation, based on the Density Functional Theory (DFT), of SnO2:4%Sb and SnO2:8%Sb show that the bandgap magnitude is strongly affected by the doping concentration, because the energy value found for 4 at%Sb and 8 at%Sb was 3.27 eV and 3.13 eV, respectively, whereas the well known value for undoped SnO2 is about 3.6 eV. Sb-doped SnO2 thin films were obtained by the sol-gel-dip-coating technique. The samples were submitted to excitation with below theoretical bandgap light (450 nm), as well as above bandgap light (266 nm) at low temperature, and a temperature-dependent increase in the conductivity is observed. Besides, an unusual temperature and time dependent decay when the illumination is removed is also observed, where the decay time is slower for higher temperatures. This decay is modeled by considering thermally activated cross section of trapping centers, and the hypothesis of grain boundary scattering as the dominant mechanism for electronic mobility. © 2012 Elsevier B.V. All rights reserved.

Search for exotic resonances decaying into WZ/ZZ in pp collisions at √s=7 TeV

A search for new exotic particles decaying to the VZ final state is performed, where V is either a W or a Z boson decaying into two overlapping jets and the Z decays into a pair of electrons, muons or neutrinos. The analysis uses a data sample of pp collisions corresponding to an integrated luminosity of 5 fb-1 collected by the CMS experiment at the LHC at √s=7 TeV in 2011. No significant excess is observed in the mass distribution of the VZ candidates compared with the background expectation from standard model processes. Model-dependent upper limits at the 95% confidence level are set on the product of the cross section times the branching fraction of hypothetical particles decaying to the VZ final state as a function of mass. Sequential standard model W′ bosons with masses between 700 and 940 GeV are excluded. In the Randall-Sundrum model for graviton resonances with a coupling parameter of 0.05, masses between 750 and 880 GeV are also excluded. © 2013 CERN for the benefit of the CMS collaboration.

Measurement of differential top-quark-pair production cross sections in pp collisions at √s = 7TeV

Normalised differential top-quark-pair production cross sections are measured in pp collisions at a centre-of-mass energy of 7 TeVat the LHC with the CMS detector using data recorded in 2011 corresponding to an integrated luminosity of 5. 0 fb-1. The measurements are performed in the lepton+jets decay channels (e+jets and μ+jets) and the dilepton decay channels (e+}e-, μ+μ-, and μ±e∓). The tt̄ differential cross section is measured as a function of kinematic properties of the final-state charged leptons and jets associated to b quarks, as well as those of the top quarks and the tt̄ system. The data are compared with several predictions from perturbative QCD calculations up to approximate next-to-next-to-leading-order precision. No significant deviations from the standard model are observed. © 2013 CERN for the benefit of the CMS collaboration.

Determinação do gradiente de pH na região interna a duas membranas em equilíbrio com eletrólito

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Influência de uma fenda na dinâmica de vórtices utilizando a teoria de Ginzburg-Landau dependente do temp

Pós-graduação em Ciência dos Materiais - FEIS

Measurement of the differential and double-differential Drell-Yan cross sections in proton-proton collisions at root s=7 TeV

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Measurement of the Upsilon(1S), Upsilon(2S), and Upsilon(3S) cross sections in pp collisions at root s=7 TeV

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Measurement of Inclusive W and Z Boson Production Cross Sections in pp Collisions at root s=8 TeV

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)