Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films


Autoria(s): Silva, Vitor D. L.; Pineiz, Tatiane F.; Morais, Evandro A.; Pinheiro, Marco A. L.; Scalvi, Luis Vicente de Andrade; Saeki, Margarida Juri; Rubo, Elisabete Aparecida Andrello
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

27/05/2014

27/05/2014

21/05/2008

Resumo

Optical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the saturation limit. The excitation is done with an intensity-controlled halogen-tungsten lamp through an interference filter, yielding an excitation wavelength of 513nm, 9 nm wide (width at half intensity peak). Irradiation at low temperature (25K) yields a conductivity increase much lower than above bandgap light. Such a behavior assures the ionization of intra-bandgap defect levels, since the filter does not allow excitation of electron-hole pairs, what would happen only in the UV range (below about 350nm). The decay of intra-bandgap excited levels in the range 250-320 K is recorded, leading to a temperature dependent behavior related to a thermally excited capture cross section for the dominating defect level. © 2008 American Institute of Physics.

Formato

1283-1288

Identificador

http://dx.doi.org/10.1063/1.2926834

AIP Conference Proceedings, v. 992, p. 1283-1288.

0094-243X

1551-7616

http://hdl.handle.net/11449/70411

10.1063/1.2926834

WOS:000255857900226

2-s2.0-43649091184

2-s2.0-43649091184.pdf

Idioma(s)

eng

Relação

AIP Conference Proceedings

Direitos

closedAccess

Palavras-Chave #Cerium #Electroluminescent devices #Thin films #Tin dioxide
Tipo

info:eu-repo/semantics/conferencePaper