Lateral shift of the transmitted light beam through a left-handed slab

It is reported that when a light beam travels through a slab of left-handed medium in the air, the lateral shift of the transmitted beam can be negative as well as positive. The necessary condition for the lateral shift to be positive is given. The validity of the stationary-phase approach is demonstrated by numerical simulations for a Gaussian-shaped beam. A restriction to the slab's thickness is provided that is necessary for the beam to retain its profile in the traveling. It is shown that the lateral shift of the reflected beam is equal to that of the transmitted beam in the symmetric configuration.

X-ray diffraction study of GaAs/InAs/GaAs ultrathin single quantum well

Ultrathin single quantum well (about one monolayer) grown on GaAs(001) substrate with GaAs cap layer has been studied by high resolution x-ray diffractometer on a beamline of the Beijing Synchrotron Radiation Facility. The interference fringes on both sides of the GaAs(004) Bragg peak are asymmetric and a range of weak fringes in the higher angle side of the Bragg peak is observed. The simulated results by using the kinematical diffraction method shows that the weak fringe range appears in the higher angle side when the phase shift introduced by the single quantum well is very slightly smaller than m pi (m:integer), and vice versa. After introducing a reasonable model of single quantum well, the simulated pattern is in good agreement with the experiment. (C) 1996 American Institute of Physics.

Design,Fabrication,and Testing of Single-Side Alignment of 16×0.8nm Arrayed-Waveguide Grating

A novel design of 100GHz-spaced 16channel arrayed-waveguide grating (AWG) based on silica-on-silicon chip is reported.AWG is achieved by adding a Y-branch to the AWG and arranging the input/output channel in a neat row,so the whole configuration can be aligned and packaged using only one fiber-array.This configuration can decrease the device's size,enlarge the minimum radius of curvature,save time on polishing and alignment,and reduce the chip's fabrication cost.

Design of side-pumped Nd : YAG lasers

Design of the typical laser diode side-pumped Nd:YAG rod system has been discussed using the conventional ray tracing method in this paper. Firstly introduce two basic matrices, refractional and translational matrix, described the transmission of nonparaxial light ray in the medium without concerning the absorption of light. And then, using those matrices, analyze the distribution of pump light in the crystal respectively under the condition of directly pumped system and indirectly pumped system with a cylindrical quartz rod as focusing lens. From the result of simulation, we compare the advantage and disadvantage of the two pumped method, and mainly consider how to select the diameter of the focus lens and cooling tube, indicate the effect of deionized water and cooling tube have on the pump light distribution in the active material. At last, make some conclusions about the side-pumped Nd:YAG laser system.

Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching

GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays.

LD Side-Pumped Passive Mode-Locked TEM00 Nd:YAG Laser Based on SESAM

We report an LD side-pumped continuous-wave passive mode-locked Nd:YAG laser with a Z-type folded cavity based on a semiconductor saturable absorber mirror (SESAM). The average output power 2.95 W of mode-locked laser with electro-optical conversion efficiency of 1.3% and high beam quality (M-x(2) = 1.25 and M-y(2) = 1.22) is achieved. The repetition rate of mode-locked pulse of 88 MHz with pulse energy of 34 nJ is obtained.

Blue-shift photoluminescence from porous InAlAs

A porous InAlAs structure was first obtained by electrochemical etching. Nano-pore arrays were formed when the In0.52Al0.48As membrane was anodized at constant voltages in an HF aqueous solution. These self-assembled structures showed evident blue-shift photoluminescence emissions. While a quantum size effect alone underestimates the blue-shift energy for a sample with a relatively large average pore wall thickness, a novel effect caused by the asymmetric etching is proposed to account for this phenomenon. The results inferred from the x-ray double crystal diffraction are in good agreement with the experimental data.