Diassociativity in Conjugacy Closed Loops

Let Q be a conjugacy closed loop, and N(Q) its nucleus. Then Z(N(Q)) contains all associators of elements of Q. If in addition Q is diassociative (i.e., an extra loop), then all these associators have order 2. If Q is power-associative and |Q| is finite and relatively prime to 6, then Q is a group. If Q is a finite non-associative extra loop, then 16 ∣ |Q|.

Q的线性密码分析

对NESSIE公布的17个分组密码之一的Q进行了线性密码分析，攻击所需的数据复杂不大于2^118(相应的成功率为0．785），空间复杂度不大于2^33+2^19+2^18+2^12+2^11+2^10。此结果显示Q对线性密码分析是不免疫的。

OnceAS/Q:一个面向QoS的Web应用服务器

网络分布计算环境下应用系统的需求多样化和复杂性的增长,要求位于中间件层次的Web应用服务器(web application server,简称WAS)从原来的尽力而为服务模型转变为服务质量(quality of service,简称QoS)保障模型,为具有不同需求的应用分别提供适宜的服务质量保障.目前的WAS系统在此方面仍然比较薄弱.OnceAS/Q是一个面向QoS的WAS系统,它以QoS规约为基础,为不同应用提供不同的QoS保障能力.OnceAS/Q实现了一个应用QoS保障框架,提供了一组QoS服务组件支持具有QoS需求的应用开发和运行.介绍了OnceAS/Q的体系结构和主要组件,详细阐述了两个关键问题,一是QoS规约的定义及其映射,另一个是面向QoS的服务组件和资源的动态重配.OnceAS/Q原型在Ecperf测试基准下,对其QoS保障能力进行了实验.实验数据表明,在较大规模的应用环境下,OnceAS/Q能够提供更好的服务质量,并且开销是可接受的.

On-Chip All-Optical Passive 3.55 Gbit/s NRZ-to-PRZ Format Conversion Using a High-Q Silicon-Based Microring Resonator

We report the experimental result of all-optical passive 3.55 Gbit/s non-return-to-zero (NRZ) to pseudo-return-to-zero (PRZ) format conversion using a high-quality-factor (Q-factor) silicon-based microring resonator notch filter on chip. The silicon-based microring resonator has 23800 Q-factor and 22 dB extinction ratio (ER), and the PRZ signals has about 108 ps width and 4.98 dB ER.

A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAIAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.

Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications

The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition (LPCVD) are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems (MEMS) devices, especially in high resonance frequency (high-f) and high quality factor (high-Q MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process (> 1000℃), and the promising properties of these films make them suitable for high-Q and high-f MEMS devices.

Efficient Mode-locked and Q-switched Nd∶YVO_4 Laser with Semiconductor Saturable Absorber Mirror

We reported an efficient diode pumped Nd ! YVO, 1 064 nm laser passively mode-locked and Q-switched by a semiconductor saturable absorber mirror(SESAM). At the incident pump power of 7. 5 W, 2. 81 W average output power was obtained during stable CW mode locking with a repetition rate of 111 MHz. The optical conversion efficiency was 37. 5% , and the slope efficiency was 39%. So far as we know, this is the highest optical-optical conversion efficiency with a SESAM at home.

中间镜式半导体可饱和吸收镜在Nd:YVO_4激光器中被动调Q特性研究

利用一种新型的中间镜式半导体可饱和吸收镜，成功实现了二极管泵浦Nd