Distortion management of SBS slow light in a single-mode optical fiber by optimization of broadband SBS gain spectrum

SPIE

Tellurium enhanced non-resonant third-order optical nonlinearity in a germano-silicate optical fiber

碲掺杂的高非线性石英光纤

All-optical switching application of germano-silicate optical fiber incorporated with Ag nanocrystals

银纳米晶体掺杂的高非线性石英光纤的全光转换应用

Intense green upconversion emission in Tb3+/Yb3+ co-doped alumino-germano-silicate optical fibers

Tb/Yb共掺的石英光纤的上转换绿光发光研究，研究了最佳浓度配比和发光机理。

Density Gradient Ultracentrifugation of Nanotubes: Interplay of Bundling and Surfactants Encapsulation

Density gradient ultracentrifugation (DGU) has emerged as a promising tool to prepare chirality enriched nanotube samples. Here, we assess the performance of different surfactants for DGU. Bile salts (e.g., sodium cholate (SC), sodium deoxycholate (SDC), and sodium taurodeoxycholate (TDC)) are more effective in individualizing Single Wall Carbon Nanotubes (SWNTs) compared to linear chain surfactants (e.g., sodium dodecylbenzene sulfonate (SDBS) and sodium dodecylsulfate (SDS)) and better suited for DGU. Using SC, a narrower diameter distribution (0.69-0.81 nm) is achieved through a single DGU step on CoMoCAT tubes, when compared to SDC and TDC (0.69-0.89 nm). No selectivity is obtained using SDBS. due to its ineffectiveness in debundling. We assign the reduce selectivity of dihydroxy bile salts (S DC and TDC) in comparison with trihydroxy SC to the formation of secondary micelles. This is determined by the number and position of hydroxyl ( OH) groups on the a-side of the steroid backbone. We also enrich CoMoCAT SWNT in the 0.84-0.92 nm range using the Pluronic F98 triblock copolymer. Mixtures of bile salts (SC) and linear chain surfactants (SOS) are used to enrich metallic and semiconducting laser-ablation grown SWNTs. We demonstrate enrichment of a single chirality, (6,5), combining diameter and metallic versus semiconductillg separation on CoMoCAT samples.

InGaAsP-InP Square Microlasers With a Vertex Output Waveguide

InGaAsP-InP square microlasers with a vertex output waveguide are fabricated by planar processes, and the etched sidewalls of the lasers are confined by insulating layer SiO2 and p-electrode TiAu metals. For a square microlaser with a side length of 30 mu m and a 2-mu m-wide output waveguide, a continuous-wave threshold current is 26 mA at room temperature and output power is 0.72 mW at 86 mA. The mode interval of 21 and 7.4 nm is observed for the microlasers with the side length of 10 and 30 mu m, respectively. Finite-difference time-domain (FDTD) simulations indicate that the lasing modes have incident angles of about 45 degrees at the boundaries of the resonator. In addition, square resonators surrounded by air, SiO2-Ti-Au, and SiO2-Au are compared by FDTD simulations.

AlGaInAs-InPMicrocylinder Lasers Connected With an Output Waveguide

AlGaInAs-InPmicrocylinder lasers connected with an output waveguide are fabricated by planar technology. Room-temperature continuous-wave operation with a threshold current of 8 mA is realized for a microcylinder laser with the radius of 10 mu m and the output waveguide width of 2 mu m. The mode Q-factor of 1.2 x 10(4) is measured from the laser spectrum at the threshold. Coupled mode characteristics are analyzed by 2-D finite-difference time-domain simulation and the analytical solution of whispering-gallery modes. The calculated mode Q-factors of coupled modes are in the same order as the measured value.

Near-Infrared Femtosecond Laser for Studying the Strain in Si1-xGex Alloy Films via Second-Harmonic Generation

The second-harmonic generation (SHG) from Si1-xGex alloy films has been investigated by near-infrared femtosecond laser. Recognized by s-out polarized SHG intensity versus rotational angle of sample, the crystal symmetry of the fully strained Si0.83Ge0.17 alloy is found changed from the O-h to the C-2 point group due to the inhomogeneity of the strain. Calibrated by double crystal X-ray diffraction, the strain-induced chi((2)) is estimated at 5.7 x 10(-7) esu. According to the analysis on p-in/s-out SHG, the strain-relaxed Si0.10Ge0.90 alloy film is confirmed to be not fully relaxed, and the remaining strain is quantitatively determined to be around 0.1%.

ON THE RATE-EQUATIONS OF SEMICONDUCTOR-LASERS FOR MEASURING SPONTANEOUS EMISSION FACTOR

The rate equations used for measuring spontaneous emission factor beta is examined through the comparison of numerical results, The results show that beta obtained by using total spontaneous emission rate R(sp) = N/tau sp is about double of that using R(sp) = BN2, The magnitude difference between the measured beta and that predicted by classical theory [8] will disappear by using more reasonable R(sp) = BN2. The results also show that the magnitude of beta may be underestimated by ignoring the nonradiative recombination rates.

PULSED ELECTRICAL OPERATION OF 1.5-MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS

Vertical cavity surface emitting lasers operating in the 1.3- and 1.5-mu m wavelength ranges are highly attractive for telecommunications applications. However, they are far less well-developed than devices operating at shorter wavelengths. Pulsed electrically-injected lasing at 1.5 mu m, at temperatures up to 240 K, is demonstrated in a vertical-cavity surface-emitting laser with one epitaxial and one dielectric reflector. This is an encouraging result in the development of practical sources for optical fiber communications systems.