Catalytic Mo2C coatings for the water gas shift reaction: Electrosynthesis in molten salts

Electrosynthesis methods using molten salts are suggested for obtaining a new catalytic system based on the Mo2C/Mo composition for the water gas shift reaction. The coatings obtained by the discharge of the carbonate ion on a molybdenum substrate and by the simultaneous reduction of the electroactive species MoO42 and CO32- are catalytically more active than bulk Mo2C or the commercial catalyst Cu-ZnO-Al2O3 by one and three orders of magnitude, respectively.

Electrochemical synthesis of Mo2C catalytical coatings for the water-gas shift reaction

The electroreduction of CO32- ions on a molybdenum cathode in a NaCl-KCl-Li2CO3 melt was studied by cyclic voltarnmetry. The electrochemical synthesis of Mo2C on molybdenum substrates has been performed at It 23 K for 7 h with a cathodic current density of 5 mA cm(-2). If molybdenum carbide is present as a thin (ca. 500 nm) film on a molybdenum substrate (Mo2C/Mo), its catalytic activity in the water gas-shift reaction is enhanced by at least an order of magnitude compared to that of the bulk Mo2C phase.

Synthesis of protective Mo-Si-B coatings in molten salts and their oxidation behavior in an air-water mixture

The formation of various phases during boronizing of silicided molybdenum substrates (MoSi2/Mo) was investigated. Boronizing treatments were conducted in molten salts under an inert gas atmosphere in the 700-1000 degrees C temperature range for 3-7 h. Depending on the process type (non-current or electrochemical) and molten salt temperature, the formation of different boride phases (MoB, Mo2B5, MoB2, MoB4) was observed. At the same time, substantial oxidation of the bulk molybdenum disilicide phase (MoSi2) to the Mo5Si3 phase was observed in non-current boronizing. The oxidation resistance of the coatings was investigated by the weight change in an air-water (2.3 vol.%) mixture at a temperature of 500 degrees C for a period up to 700 h. Results indicated that a two-phase microstructure consisting of the MoSi2, matrix phase with 12-15 wt.% of the MoB4 phase greatly improved the oxidation resistance of the molybdenum substrates. The weight gain rate observed was 6.5 center dot 10(-4) mg/cm(2) h. (c) 2006 Elsevier B.V. All rights reserved.

Synthesis of molybdenum borides and molybdenum silicides in molten salts and their oxidation behavior in an air-water mixture

The formation of various coatings in molybdenum-boron and molybdenum-silicon systems was investigated. Boronizing and siliciding treatments were conducted in molten salts under inert gas atmosphere in the 850-1050 degrees C temperature range for 7 h. The presence of boride (e.g. Mo2B, MoB, Mo2B5) and silicide (MoSi2, Mo5Si3) phases, formed on the surface of Mo plates, was confirmed by X-ray diffraction analysis. The distribution of elements was determined by means of wavelength dispersive spectroscopy (WDS) spectra of the surface and line-scan analyses from surface to interior. Depending on the process type (diffusional or electrochemical) and temperature, the thickness of the protective layers formed on the substrate ranged from 6 to 40 gm. The oxidation resistance of obtained phases was investigated in an air-water mixture in the temperature range of 500-700 degrees C for a period up to 400 h. An improved oxidation behavior of coated plates in comparison with that of pure molybdenum was observed. (c) 2004 Elsevier B.V. All rights reserved.

An Investigation into the Optimum Thickness of Titanium Dioxide Thin Films Synthesized by Using Atmospheric Pressure Chemical Vapour Deposition for Use in Photocatalytic Water Oxidation

Twenty eight films of titanium dioxide of varying thickness were synthesised by using atmospheric pressure chemical vapour deposition (CVD) of titanium(IV) chloride and ethyl acetate onto glass and titanium substrates. Fixed reaction conditions at a substrate temperature of 660 degrees C were used for all depositions, with varying deposition times of 5-60 seconds used to control the thickness of the samples. A sacrificial electron acceptor system composed of alkaline sodium persulfate was used to determine the rate at which these films could photo-oxidise water in the presence of 365 nm light. The results of this work showed that the optimum thickness for CVD films on titanium substrates for the purposes of water oxidation was approximate to 200 nm, and that a platinum coating on the reverse of such samples leads to a five-fold increase in the observed rate of water oxidation.

Water-based colourimetric optical indicators for the detection of carbon dioxide

Water-based colourimetric indicator films are shown to have increased operational lifetimes under ambient conditions compared to similar solvent-based counterparts. The response and sensitivity characteristics of a water-based, carbon dioxide-responsive ink are characterised and compared and contrasted to those of a similar solvent-based indicator. The changes in the response characteristics of the ink as a function of the amount of base (sodium hydrogen carbonate) and plasticizer (glycerol) contained in the ink are reported, as are the effects of varying ambient temperature and humidity. The ink is incorporated into a felt tip pen and applied to a number of different substrates, producing a distinct, reversible colour change on all tested surfaces, when a sufficient level of carbon dioxide is present. The possible application of the indicator is discussed briefly.

The photo-oxidation of water by sodium persulfate, and other electron acceptors, sensitised by TiO2

A number of different electron acceptors are tested for efficacy in the oxidation of water to oxygen, photocatalysed by titanium dioxide. The highly UV-absorbing metal ion electron acceptors, Ce4+ and Fe3+, appear ineffective at high concentration (10(-2) M), due to UV-screening, but more effective at lower concentrations (10(-3) M). The metal-depositing electron acceptor, Ag+, is initially effective, but loses activity upon prolonged irradiation due to metal deposition which promotes electron-hole recombination as well as UV-screening the titania particles. Most striking of the electron acceptors tested is persulfate, particularly in alkaline solution (0.1 M NaOH). The kinetics of the photo-oxidation of water by persulfate, photocatalysed by titania are studied as a function of pH, [S2O82-] and incident light intensity (I). The initial rate of water oxidation increases with pH, is directly proportional to the concentration of persulfate present and depends upon I-0.6. The TiO2/alkaline persulfate photosystem is robust and shows very little evidence of photochemical wear upon repeated irradiation. The results of this work are discussed with regard to previous work in this area and current mechanistic thinking. The formal quantum efficiency of the TiO2/alkaline persulfate photosystem was estimated as ca. 2%. (C) 2004 Elsevier B.V. All rights reserved.

Photo-oxidation of water sensitized by TiO2 and WO3 in presence of different electron acceptors

The photo-oxidation of water is studied in presence of UV-light (lambda

Detoxification of water by semiconductor photocatalysis

An overview of the use of semiconductor photocatalysis for water purification is given. The basic principles of semiconductor photocatalysis are described along with the current understanding of the underlying reaction mechanism(s) and how it fits in with the major features of the observed Langmuir-Hinshelwood-type kinetics of pollutant destruction. These features are illustrated based on literature on the destruction of aqueous solutions of 4-chlorophenol as a pollutant, using titanium dioxide as the photocatalyst. The range of organic and inorganic pollutants that can be destroyed by semiconductor photocatalysis are reported and discussed. The basic considerations that need to be made when designing a reactor for semiconductor photocatalysis are considered. These include: the nature of the reactor glass, the type of illumination source, and the nature and type of semiconductor photocatalyst. The key basic photoreactor designs are reported and discussed, including external illumination, annular, and circular photoreactors. Actual designs that have been used for fixed and thin falling film semiconductor photocatalyst reactors are illustrated and their different features discussed. Basic non-concentrating and concentrating solar photoreactors for semiconductor photocatalysis are also reported. The design features of the major commercial photocatalytic reactor systems for water purification are reported and illustrated. Several case studies involving commercial photocatalytic reactors for water purification are reported. An attempt is made briefly to compare the efficacy of semiconductor photocatalysis for water purification with that of other, more popular and prevalent water purification processes. The future of semiconductor photocatalysis as a method of purifying water is considered.

Platinum Group Metals and Their Oxides in Semiconductor Photosensitisation BASIC PRINCIPLES, METAL PHOTODEPOSITION AND WATER PHOTOSPLITTING REACTIONS

The basic principles of semiconductor photochemistry, particularly using titania as a semiconductor photocatalyst, are discussed. When a platinum group metal or its oxide is deposited onto the surface of a sensitised semiconductor the overall efficiency of the reactions it takes part in are often improved, especially when the deposits are used as hydrogen and oxygen catalysts, respectively. Methods of depositing metal or metal oxide are examined, and a particular focus is given to a photodeposition process that uses a sacrificial electron donor. Platinum group metal and platinum group metal oxide coated semiconductor photocatalysts are prominent in heterogeneous systems that are capable of the photoreduction, oxidation and cleavage of water. There is a recent renaissance in work on water-splitting semiconductor-sensitised photosystems, but there are continued concerns over their irreproducibility, longevity and photosynthetic nature.

Platinum and Palladium in Semiconductor Photocatalytic Systems FACTORS AFFECTING THE PURIFICATION OF WATER AND AIR

A wide range of organic pollutants can be destroyed by semiconductor photocatalysis using titania. The purification of water and air contaminated with organic pollutants has been investigated by semiconductor photocatalysis for many years and in attempts to improve the purification rate platinum and palladium have been deposited, usually as fine particles, on the titania surface. Such deposits are expected to improve the rate of reduction of oxygen and so reduce the probability of electron-hole recombination and increase the overall rate of the reaction. The effectiveness of the deposits is reviewed here and appears very variable with reported rate enhancement factors ranging from 8 to 0.1. Semiconductor photocatalysis can be used to purify air (at temperatures > 100 degrees C) and Pt deposits can markedly improve the overall rate of mineralisation. However, volatile organic compounds containing an heteroatom can deactivate the photocatalyst completely and irreversibly. Factors contributing to the success of the processes are considered. The use of chloro-Pt(IV)-titania and other chloro-platinum group metals-titania complexes as possible visible light sensitisers for water and air purification is briefly reviewed.

Bromate removal from drinking water by semiconductor photocatalysis

The semiconductor photocatalyst, platinised titanium dioxide, Pt/TiO2, is used to promote the destruction of bromate ions to bromide and oxygen by 254 nm ultraviolet light. The kinetics of bromate removal are first order with respect to [BrO3-] and are inhibited, although not completely, by competitive adsorption by other anions, including bromide and sulfate ions. The Pt/TiO2 can be used not only as a powder dispersion, but also as a thin film in a flow reactor for the destruction of bromate ions. Copyright (C) 1996 Elsevier Science Ltd