3种念珠藻多糖对自由基的清除作用

研究了地木耳(Nostoc commune)、葛仙米(N.sphaeroides)和发菜(N.flagelliform e)3种念珠藻多糖对自由基的清除作用。结果表明,3种念珠藻多糖对超氧阴离子自由基和羟自由基具有很强的清除作用,且呈量效关系,地木耳清除超氧自由基作用最强,最高清除率达72.3%,葛仙米和发菜分别为46.7%、35.5%;发菜清除羟自由基效果最强,最高清除率达74.3%,葛仙米和地木耳清除率分别为49.0%、46.7%;3种念珠藻多糖对DPPH自由基的清除作用不显著。

大型浅水湖泊——巢湖内源磷负荷的时空变化特征及形成机制

通过对大型浅水富营养化湖泊——巢湖湖水、间隙水以及沉积物中磷形态及吸附行为时空变化的研究发现,富营养化较为严重的巢湖西区湖水、间隙水中的正磷酸盐(orthophosphate,Ortho-P)、总磷(total phosphorus,TP)显著高于东湖区,这与西湖区有大量的营养物质通过入湖河道输入有密切关系；此外水柱中颗粒态磷(particulate phosphorus,PP)亦有同样的空间分布规律,且PP的含量与微囊藻的生物量呈显著正相关关系,表明微囊藻在吸收与储藏磷方面比其它藻类更具优势。夏季浮游藻

我国淡水优质草食性鱼类的营养和能量学研究 Ⅱ.草鱼、团头鲂对七种水生高等植物的最大摄食量和消化率的测定

作者采用常规生化分析法测定草食性鱼类天然食料(七种水生高等植物)的生化成分和能值。在实验室特定条件下测定了草鱼和团头鲂的系列体重组对七种水生高等植物的最大摄食量和消化率。1.七种水生高等植物的生化成分的含量和能值的分析结果表明,菹草、黄丝草、聚草、苦草、小茨草、轮叶黑藻和紫背浮萍的水分百分含量范围为80.85—92.72%、蛋白质为1.69—4.96%、脂肪为0.35—1.09%、灰分为0.98—2.6%、纤维素为0.66—2.17%、无氮浸出物为2.3—9.95%。七种水生植物的蛋白质均含有常见十七种氨

~(59)Co~(2+)对~1H与~(35)Cl的NMR影响

<正> 在前文的基础上,用~(59)CO~2+Cl_2·6H_2O加D_2O作为样品,在200MHz谱仪上观察~1H,在400MHz谱仪上观察~(35)Cl,研究强顺磁离子~(59)Co~2+(s=3/2,I=7/2)在外加直流磁场H_0作用下,它对~1H与~(35)Cl的NMR影响。因为强顺磁离子~(59)Co~(2+)的电子自旋(s=3/2)是围绕着核旋转的,因此可以统计平均计算,

Cloning, characterization, and gene expression analysis of a novel cadmium metallothionein gene in Tetrahymena pigmentosa

A novel cadmium-inducible metallothionein (MT) gene (Tpig-MT1) was cloned and sequenced from the ciliate Tetrahymena pigmentosa. The number of deduced amino acids is 118. The polypeptide possesses CCC and CC clusters characteristic of typical Tetrahymena Cd-inducible MTs. The structure of Tpig-MT1 is different from the reported Cd-MT in T. pyriformis, T. thermophila and T. pigmentosa. Tpig-MT1 contains two intragenic tandem repeats with 72.9% identity described as Tpig-MT1 (repeat A1) and Tpig-MT1 (repeat A2). The transcriptional response of Tpig-MT1 gene to different heavy metals (Cd, Cu, Zn, Hg, Pb) and oxidative stress (H2O2) was measured using real-time quantitative PCR. The results showed that the gene was quickly induced (1 h) by the five heavy metals and the order of expression level was Hg>Pb>Cd>Cu>Zn. The induction effect of H2O2 was 5-fold after about 15 min, but soon decreased to a non-significant level (30 min). The genetic diversity of Tetrahymena MT genes is discussed in relation to the unique structure of the Tpig-MT1 gene and other reported Cd-MT isoforms. (C) 2008 Elsevier B.V. All rights reserved.

Responses of photosynthetic activity in the drought-tolerant cyanobacterium, Nostoc flagelliforme to rehydration at different temperature

Photosynthetic activity during rehydration at four temperatures (5, 15, 25, 35 degrees C) was studied in a terrestrial, highly drought-tolerant cyanobacterium, Nostoc flagelliforme. At all the temperatures, the optimum quantum yield F-v/F-m increased rapidly within I It and then increased slowly during the process of rehydration. The increase in F-v/F-m at 25 and 35 degrees C was larger than that at 5 and 15 degrees C. In addition, the changes of initial intensity of fluorescence (F-0) and variable fluorescence (F-v) were more significant at 25 and 35 degrees C than those at 5 and 15 degrees C. Chlorophyll a content increased with the increase of temperature during the course of rehydration, with this being more pronounced at 25 and 35 degrees C. The photosynthetic rates at 25 and 35 degrees C were higher than those at 5 and 15 degrees C. Induction of chlorophyll fluorescence with sustained rewetting at 5 and 15 degrees C had two phases of transformation, whereas at 25 and 35 degrees C it had a third peak kinetic phase and showed typical chlorophyll fluorescence steps on rewetting for 24 h, representing a normal physiological state. A comparison of the chlorophyll fluorescence parameters, chlorophyll a content, and the chlorophyll fluorescence induction led to the conclusion that N. flagelliforme had a more rapid and complete recovery at 25 and 35 degrees C than that at 5 and 15 degrees C, although it could recover its photosynthetic activity at any of the four temperatures. (c) 2007 Published by Elsevier Ltd.

STUDY ON MICROWAVE CYCLOTRON RESONANCE OF HIGH-MOBILITY GaAs/Al-0.35 Ga-0.65 As TWO-DIMENSIONAL ELECTRON GAS

The properties of electron states in the presence of microwave irradiation play a key role in understanding the oscillations of longitudinal resistance and the zero-resistance states in a high-mobility two-dimensional electron gas(2DEG) in low magnetic field. The properties of electron states in a high-mobility and low-density GaAs/Al0.35Ga0.65As 2DEG in the presence of Ka-band microwave irradiation were studied by reflectance-based optically detected cyclotron resonance(RODCR). The influences of the direction of microwave alternating electronic field, wavelength of the laser, and temperature on RODCR results were discussed. The results show that RODCR measurements provide a convenient and powerful method for studying electron states in 2DEG.

Theoretical design and performance of InxGa1-xN two-junction solar cells

The efficiencies of InxGa1-xN two-junction solar cells are calculated with various bandgap combinations of subcells under AM1.5 global, AM1.5 direct and AM0 spectra. The influence of top-cell thickness on efficiency has been studied and the performance of InxGa1-xN cells for the maximum light concentration of various spectra has been evaluated. Under one-sun irradiance, the optimum efficiency is 35.1% for the AM1.5 global spectrum, with a bandgap combination of top/bottom cells as 1.74 eV/1.15 eV. And the limiting efficiency is 40.9% for the highest light concentration of the AM1.5 global spectrum, with the top/bottom cell bandgap as 1.72 eV/1.12 eV.

Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm

High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition (UHV/CVD). This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 mu m Ge, with responsivities as high as 0.38 and 0.21 A/W at 1.31 and 1.55 mu m, respectively. The dark current density is 0.37 mA/cm(2) and 29.4 mA/cm(2) at 0 V and a reverse bias of 0.5 V. The detector with a diameter of 30 mu m, a 3 dB-bandwidth of 4.72 GHz at an incident wavelength of 1550 nm and zero external bias has been measured. At a reverse bias of 3 V, the bandwidth is 6.28 GHz.

Upconversion emission of a Er3+-doped glass microsphere under 633 nm excitation (vol 35, pg 353, 2004)

　

A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy

A self-organized In0.5Ga0.5As/GaAs quantum island structure emitting at 1.35 mum at room temperature has been successfully fabricated by molecular beam epitaxy via cycled (InAs)(1)/GaAs)(1)monolayer deposition method. The photoluminescence measurement shows that a very narrow linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In0.5Ga0.5As island structure due to indium segregation reduction by introducing an AlAs layer and the strain reduction by inserting an In0.2Ga0.8As layer overgrown on the top of islands. The mound-like morphology of the islands elongated along the [1 (1) over bar0] azimuth are observed by the atomic force microscopy measurement, which reveals the fact that strain in the islands is partially relaxed along the [1 (1) over bar0] direction. Our results present important information for the fabrication of 1.3 mum wavelength quantum dot devices.

1.35 mu m photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)(1)/(GaAs)(1) monolayer deposition

1.35 mum photoluminescence (PL) with a narrow linewidth of only 19.2 meV at room temperature has been achieved in In0.5Ga0.5As islands structure grown on GaAs (1 0 0) substrate by solid-source molecular beam epitaxy. Atomic force microscopy (AFM) measurement reveals that the 16-ML-thick In0.5Ga0.5As islands show quite uniform InGaAs mounds morphology along the [ 1(1) over bar 0] direction with a periodicity of about 90 nm in the [1 1 0] direction. Compared with the In0.5Ga0.5As alloy quantum well (QW) of the same width, the In0.5Ga0.5As islands structure always shows a lower PL peak energy and narrower full-width at half-maximum (FWHM), also a stronger PL intensity at low excitation power and more efficient confinement of the carriers. Our results provide important information for optimizing the epitaxial structures of 1.3 mum wavelength quantum dots devices. (C) 2000 Elsevier Science B.V. All rights reserved.

A Novel 0.72-6.2GHz Continuously-Tunable Delta Sigma Fractional-N Frequency Synthesizer

This paper presents a wideband Delta Sigma-based fractional-N synthesizer with three integrated quadrature VCOs for multiple-input multiple-output (MIMO) wireless communication applications. It continuously covers a wide range frequency from 0.72GHz to 6.2GHz that is suitable for multiple communication standards. The synthesizer is designed in 0.13-um RE CMOS process. The dual clock full differential multi-modulus divide (MMD) with low power consumption can operate over 9GHz under the worst condition. In the whole range frequency from 0.72GHz to 6.2GHz, the maximal tuning range of the QVCOs reaches 33.09% and their phase noise is -119d8/Hz similar to 124d8/Hz @1MHz. Its current is less than 12mA at a 1.2V voltage supply when it operates at the highest frequency of 6.2GHz.

Magnetic Properties of FePt Nanoparticles Prepared by a Micellar Method

FePt nanoparticles with average size of 9 nm were synthesized using a diblock polymer micellar method combined with plasma treatment. To prevent from oxidation under ambient conditions, immediately after plasma treatment, the FePt nanoparticle arrays were in situ transferred into the film-growth chamber where they were covered by an SiO2 overlayer. A nearly complete transformation of L1(0) FePt was achieved for samples annealed at temperatures above 700 A degrees C. The well control on the FePt stoichiometry and avoidance from surface oxidation largely enhanced the coercivity, and a value as high as 10 kOe was obtained in this study. An evaluation of magnetic interactions was made using the so-called isothermal remanence (IRM) and dc-demagnetization (DCD) remanence curves and Kelly-Henkel plots (Delta M measurement). The Delta M measurement reveals that the resultant FePt nanoparticles exhibit a rather weak interparticle dipolar coupling, and the absence of interparticle exchange interaction suggests no significant particle agglomeration occurred during the post-annealing. Additionally, a slight parallel magnetic anisotropy was also observed. The results indicate the micellar method has a high potential in preparing FePt nanoparticle arrays used for ultrahigh density recording media.