Synthesis and characterization of metal substituted AlxCr1-x(acetylacetonate)(3) single-source precursors for their application to MOCVD of thin films

A detailed study, involving the synthesis of a single-source precursor containing two metal ions sharing the same crystallographic site, has been undertaken to elucidate the use of such a single-source precursor in a CVD process for growing thin films of oxides comprising these two metals, ensuring a uniform composition and distribution of metal ions. The substituted complexes Cr1-xAlx(acac)(3), where acac = acetyl-acetonate, have been prepared by a co-synthesis method, and characterized using UV-Vis spectroscopy. TGA/DTA measurements, and single crystal X-ray diffraction at low temperature. All the studied compositions crystallize in the monoclinic space group P2(1)/c with Z = 4 in the unit cell. It was observed that the ratio (Al:Cr) of the site occupancy for the metal ions, obtained from single crystal refinement, is in agreement with the results obtained from complexometric titrations. All the solid state structures have the metal in an octahedral environment forming six-membered chelate rings. M-O acac bond lengths and disorder in the terminal carbon have been studied in detail for these substituted metal-organic complexes. One composition among these was chosen to evaluate their suitability as a single-source precursor in a LPMOCVD process (low-pressure metal-organic chemical vapour deposition) for the deposition of a substituted binary metal oxide thin film. The resulting thin films were characterized by X-ray diffraction, scanning electron microscopy, and infrared spectroscopy. (C) 2010 Elsevier Ltd. All rights reserved.

Electronic states in a disordered metal: Magnetotransport in doped germanium

We observe a sharp feature in the ultra-low-temperature magnetoconductivity of degenerately doped Ge:Sb at H∼25 kOe, which is robust up to at least three times the critical density for the insulator-metal transition. This field corresponds to a low-energy scale characteristic of the special nature of antimony donors in germanium. Its presence and sensitivity to uniaxial stress confirm the notion of metallic impurity bands in doped germanium.

A Thermodynamic Proposal for the Exposition of Critically and other Subtle Features in Self-Deflagrating Ammonium Perchlorate Systems

A first comprehensive investigation on the deflagration of ammonium perchlorate (AP) in the subcritical regime, below the low pressure deflagration limit (LPL, 2.03 MPa) christened as regime I$^{\prime}$, is discussed by using an elegant thermodynamic approach. In this regime, deflagration was effected by augmenting the initial temperature (T$_{0}$) of the AP strand and by adding fuels like aliphatic dicarboxylic acids or polymers like carboxy terminated polybutadiene (CTPB). From this thermodynamic model, considering the dependence of burning rate ($\dot{r}$) on pressure (P) and T$_{0}$, the true condensed (E$_{\text{s,c}}$) and gas phase (E$_{\text{s,g}}$) activation energies, just below and above the surface respectively, have been obtained and the data clearly distinguishes the deflagration mechanisms in regime I$^{\prime}$ and I (2.03-6.08 MPa). Substantial reduction in the E$_{\text{s,c}}$ of regime I$^{\prime}$, compared to that of regime I, is attributed to HClO$_{4}$ catalysed decomposition of AP. HClO$_{4}$ formation, which occurs only in regime I$^{\prime}$, promotes dent formation on the surface as revealed by the reflectance photomicrographs, in contrast to the smooth surface in regime I. The HClO$_{4}$ vapours, in regime I$^{\prime}$, also catalyse the gas phase reactions and thus bring down the E$_{\text{s,g}}$ too. The excess heat transferred on to the surface from the gas phase is used to melt AP and hence E$_{\text{s,c}}$, in regime I, corresponds to the melt AP decomposition. It is consistent with the similar variation observed for both the melt layer thickness and $\dot{r}$ as a function of P. Thermochemical calculations of the surface heat release support the thermodynamic model and reveal that the AP sublimation reduces the required critical exothermicity of 1108.8 kJ kg$^{-1}$ at the surface. It accounts for the AP not sustaining combustion in the subcritical regime I$^{\prime}$. Further support for the model comes from the temperature-time profiles of the combustion train of AP. The gas and condensed phase enthalpies, derived from the profile, give excellent agreement with those computed thermochemically. The $\sigma _{\text{p}}$ expressions derived from this model establish the mechanistic distinction of regime I$^{\prime}$ and I and thus lend support to the thermodynamic model. On comparing the deflagration of strand against powder AP, the proposed thermodynamic model correctly predicts that the total enthalpy of the condensed and gas phases remains unaltered. However, 16% of AP particles undergo buoyant lifting into the gas phase in the `free board region' (FBR) and this renders the demarcation of the true surface difficult. It is found that T$_{\text{s}}$ lies in the FBR and due to this, in regime I$^{\prime}$, the E$_{\text{s,c}}$ of powder AP matches with the E$_{\text{s,g}}$ of the pellet. The model was extended to AP/dicarboxylic acids and AP/CTPB mixture. The condensed ($\Delta $H$_{1}$) and gas phase ($\Delta $H$_{2}$) enthalpies were obtained from the temperature profile analyses which fit well with those computed thermochemically. The $\Delta $H$_{1}$ of the AP/succinic acid mixture was found just at the threshold of sustaining combustion. Indeed the lower homologue malonic acid, as predicted, does not sustain combustion. In vaporizable fuels like sebacic acid the E$_{\text{s,c}}$ in regime I$^{\prime}$, understandably, conforms to the AP decomposition. However, the E$_{\text{s,c}}$ in AP/CTPB system corresponds to the softening of the polymer which covers AP particles to promote extensive condensed phase reactions. The proposed thermodynamic model also satisfactorily explains certain unique features like intermittent, plateau and flameless combustion in AP/ polymeric fuel systems.

A thermodynamic protocol for explaining subcriticality and other subtle features in self-deflagrating solids

A novel universal approach to understand the self-deflagration in solids has been attempted by using basic thermodynamic equation of partial differentiation, where burning mte depends on the initial temperature and pressure of the system. Self-deflagrating solids are rare and are reported only in few compounds like ammonium perchlorate (AP), polystyrene peroxide and tetrazole. This approach has led us to understand the unique characteristics of AP, viz. the existence of low pressure deflagration limit (LPL 20 atm), hitherto not understood sufficiently. This analysis infers that the overall surface activation energy comprises of two components governed by the condensed phase and gas phase processes. The most attractive feature of the model is the identification of a new subcritical regime I' below LPL where AP does not burn. The model is aptly supported by the thermochemical computations and temperature-profile analyses of the combustion train. The thermodynamic model is further corroborated from the kinetic analysis of the high pressure (1-30 atm) DTA thermograms which affords distinct empirical decomposition rate laws in regimes I' and 1 (20-60 atm). Using Fourier-Kirchoff one dimensional heat transfer differential equation, the phase transition thickness and the melt-layer thickness have been computed which conform to the experimental data.

Enhancement in Bath Mixing and Plume area in a New Degassing Process - A Computational Fluid Dynamic Study

Reaction between the various species in slag and metal phase is usually mass transfer controlled. There have been continuous efforts to increase the reaction efficiency in slag-metal system, especially during decarburization of steel to produce the ultra low carbon steel (ULCS) in secondary steelmaking. It has been found that the surface reaction is a dominant factor in the final stage of decarburization. In the initial stage, the inner site reaction is major factor in the refining process. The mixing of bath affects the later reaction. However, the former reaction (surface reaction) is affected by the plume size area at the top of the metal surface. Therefore, a computational study has been made to understand the fluid dynamics of a new secondary steelmaking process called Revolutionary Degasser Activator (REDA) to study the bath mixing and plume area. REDA process has been considered as it is claimed that this process can reduce the carbon content in steel below 10ppm in a less time than the other existing processes such as RH and Tank degasser. This study shows that both bath mixing and plume area are increased in REDA process facilitating it to give the desired carbon content in less time. Qualitative comments are made on slag-metal reaction system based on this finding.

Turbulent heat flux variation over the Monsoon-Trough region during MONTBLEX-90

Tower data collected during the Monsoon-Trough Boundary Layer Experiment (MONTBLEX-90) have been analysed to understand the observed structure of the surface layer over an arid region (Jodhpur) and a moist region (Kharagpur) during active and weak phases of the 1990 southwest monsoon. Turbulent heat and momentum fluxes are estimated by the eddy correlation method using sonic data. The turbulent momentum flux at both Jodhpur and Kharagpur was larger when the winds were stronger, reaching a maximum of the order of 0.5 N m(-2) on 5 and 6 August when a low pressure system was located over the region. The heat flux at Jodhpur is high during weak monsoon days, the maximum being 450 W m(-2), whereas during active days the flux never exceeds 200 W m(-2). At Kharagpur, the flux does not vary significantly between active and weak monsoon days, the maximum in either phase being 160 W m(-2) At Jodhpur, there is significant contrast in the near-surface air temperature, being higher during weak monsoon days as compared to active days. Cloud cover did not vary significantly in both the regions. The turbulent heat flux variation at both the sites appears to be correlated mainly with soil mixture, and less sensitive to cloud cover.

Zn incorporation and band gap shrinkage in p-type GaAs

Dimethylzine (DMZn) was used as a p-type dopant in GaAs grown by low pressure metalorganic vapor phase epitaxy using trimethylgallium and arsine (AsH3) as source materials, The hole carrier concentrations and zinc (Zn) incorporation efficiency are studied by using the Hall effect, electrochemical capacitance voltage profiler and photoluminescence (PL) spectroscopy, The influence of growth parameters such as DMZn mole fraction, growth temperature, and AsH, mole fraction on the Zn incorporation have been studied. The hole concentration increases with increasing DMZn and AsH3 mole fraction and decreases with increasing growth temperature. This can be explained by vacancy control model. The PL experiments were carried out as a function of hole concentration (10(17)-1.5 x 10(20) cm(-3)). The main peak shifted to lower energy and the full width at half maximum (FWHM) increases with increasing hole concentrations. We have obtained an empirical relation for FWHM of PL, Delta E(p)(eV) = 1.15 x 10(-8)p(1/3). We also obtained an empirical relation for the band gap shrinkage, Delta E-g in Zn doped GaAs as a function of hole concentration. The value of Delta E-g(eV) = -2.75 x 10(-8)p(1/3), indicates a significant band gap shrinkage at high doping levels, These relations are considered to provide a useful tool to determine the hole concentration in Zn doped GaAs by low temperature PL measurement. The hole concentration increases with increasing AsH3 mole fraction and the main peak is shifted to a lower energy side. This can be explained also by the vacancy control model. As the hole concentration is increased above 3.8 x 10(18) cm(-3), a shoulder peak separated from the main peak was observed in the PL spectra and disappears at higher concentrations. (C) 1997 American Institute of Physics.

Antiferroelectric lead zirconate thin films by pulsed laser ablation

Lead Zirconate (PbZrO3) thin films were deposited by pulsed laser ablation method. Pseudocubic (110) oriented in-situ films were grown at low pressure. The field enforced anti-ferroelectric (AFE) to ferroelectric (FE) phase transformation behaviour was investigated by means of a modified Sawyer Tower circuit as well as capacitance versus applied voltage measurements. The maximum polarisation obtained was 36 mu C cm(-2) and the critical field to induce ferroelectric state and to reverse the antiferroelectric slates were 65 and 90 kV cm(-1) respectively. The dielectric properties were investigated as a function of frequency and temperature. The dielectric constant of the AFE lead zirconate thin him was 190 at 100 kHz which is more than the bulk ceramic value (120) with a dissipation factor of less than 0.07. The polarisation switching kinetics of the antiferroelectric PbZrO3 thin films showed that the switching time to be around 275 ns between antipolar state to polar states. (C) 1999 Elsevier Science S.A. All rights reserved.

Thermodynamic modeling to analyse composition of carbonaceous coatings of MnO and other oxides of manganese grown by MOCVD

Equilibrium thermodynamic analysis has been applied to the low-pressure MOCVD process using manganese acetylacetonate as the precursor. ``CVD phase stability diagrams'' have been constructed separately for the processes carried out in argon and oxygen ambient, depicting the compositions of the resulting films as functions of CVD parameters. For the process conduced in argon ambient, the analysis predicts the simultaneous deposition of MnO and elemental carbon in 1: 3 molar proportion, over a range of temperatures. The analysis predicts also that, if CVD is carried out in oxygen ambient, even a very low flow of oxygen leads to the complete absence of carbon in the film deposited oxygen, with greater oxygen flow resulting in the simultaneous deposition of two different manganese oxides under certain conditions. The results of thermodynamic modeling have been verified quantitatively for low-pressure CVD conducted in argon ambient. Indeed, the large excess of carbon in the deposit is found to constitute a MnO/C nanocomposite, the associated cauliflower-like morphology making it a promising candidate for electrode material in supercapacitors. CVD carried out in oxygen flow, under specific conditions, leads to the deposition of more than one manganese oxide, as expected from thermodynamic analysis ( and forming an oxide-oxide nanocomposite). These results together demonstrate that thermodynamic analysis of the MOCVD process can be employed to synthesize thin films in a predictive manner, thus avoiding the inefficient trial-and-error method usually associated with MOCVD process development. The prospect of developing thin films of novel compositions and characteristics in a predictive manner, through the appropriate choice of CVD precursors and process conditions, emerges from the present work.

Si incorporation and Burstein-Moss shift in n-type GaAs

Silane (SiH4) was used as an n-type dopant in GaAs grown by low pressure metalorganic vapor phase epitaxy using trimethylgallium (TMGa) and arsine (AsH3) as source materials. The electron carrier concentrations and silicon (Si) incorporation efficiency are studied by using Hall effect, electrochemical capacitance voltage profiler and low temperature photoluminescence (LTPL) spectroscopy. The influence of growth parameters, such as SiH4 mole fraction, growth temperature, TMGa and AsH3 mole fractions on the Si incorporation efficiency have been studied. The electron concentration increases with increasing SIH4 mole fraction, growth temperature, and decreases with increasing TMGa and AsH3 mole fractions. The decrease in electron concentration with increasing TMGa can be explained by vacancy control model. The PL experiments were carried out as a function of electron concentration (10(17) - 1.5 x 10(18) cm(-3)). The PL main peak shifts to higher energy and the full width at half maximum (FWHM) increases with increasing electron concentrations. We have obtained an empirical relation for FWHM of PL, Delta E(n) (eV) = 1.4 x 10(-8) n(1/3). We also obtained an empirical relation for the band gap shrinkage, Delta E-g in Si-doped GaAs as a function of electron concentration. The value of Delta E-g (eV) = -2.75 x 10(-8) n(1/3), indicates a significant band gap shrinkage at high doping levels. These relations are considered to provide a useful tool to determine the electron concentration in Si-doped GaAs by low temperature PL measurement. The electron concentration decreases with increasing TMGa and AsH3 mole fractions and the main peak shifts to the lower energy side. The peak shifts towards the lower energy side with increasing TMGa variation can also be explained by vacancy control model. (C) 1999 Elsevier Science S.A. All rights reserved.

Sandwich propellant combustion: Modeling and experimental comparison

This paper reports reacting fluid dynamics calculations for an ammonium percholrate binder sandwich and extracts experimentally observed features including surface profiles and maximum regression rates as a function of pressure and binder thickness. These studies have been carried out by solving the two-dimensional unsteady Navier-Stokes equations with energy and species conservation equations and a kinetic model of three reaction steps (ammonium perchlorate decomposition flame, primary diffusion flame, and final diffusion flame) in the gas phase. The unsteady two-dimensional conduction equation is solved in the condensed phase. The regressing surface is unsteady and two dimensional. Computations have been carried out for a binder thickness range of 25-125 mum and a pressure range of 1.4 to 6.9 MPa. Good comparisons at several levels of detail are used to demonstrate the need for condensed-phase two-dimensional unsteady conduction and three-step gas-phase reactions. The choice of kinetic and thermodynamic parameters is crucial to good comparison with experiments. The choice of activation energy parameters for ammonium percholrate combustion has been made with stability of combustion in addition to experimentally determined values reported in literature. The choice of gas-phase parameters for the diffusion flames are made considering that (a) primary diffusion flame affects the low-pressure behavior and (b) final diffusion flame affects high-pressure behavior. The predictions include the low-pressure deflagration limit of the sandwich apart from others noted above. Finally, this study demonstrates the possibility of making meaningful comparisons with experimental observations on sandwich propellant combustion.

Thermodynamic investigation of the MOCVD of copper films from bis(2,2,6,6-tetramethyl-3,5-heptadionato)copper(II)

Equilibrium concentrations of various condensed and gaseous phases have been thermodynamically calculated, using the free energy minimization criterion, for the metalorganic chemical vapour deposition (MOCVD) of copper films using bis(2,2,6,6-tetramethyl-3,5-heptadionato)copper(II) as the precursor material. From among the many chemical species that may possibly result from the CVD process, only those expected on the basis of mass spectrometric analysis and chemical reasoning to be present at equilibrium, under different CVD conditions, are used in the thermodynamic calculations. The study predicts the deposition of pure, carbon-free copper in the inert atmosphere of argon as well as in the reactive hydrogen atmosphere, over a wide range of substrate temperatures and total reactor pressures. Thin films of copper, grown on SiO2/Si(100) substrates from this metalorganic precursor by low pressure CVD have been characterized by XRD and AES. The experimentally determined composition of CVD-grown copper films is in reasonable agreement with that predicted by thermodynamic analysis.

Cobalt oxide thin films prepared by metalorganic chemical vapor deposition from cobalt acetylacetonate

Thin films of cobalt oxide have been deposited on various substrates, such as glass, Si(100), SrTiO3(100), and LaAlO3(100), by low pressure metalorganic chemical vapor deposition (MOCVD) using cobalt(IL), acetylacetonate as the precursor. Films obtained in the temperature range 400-600 degreesC were uniform and highly crystalline having Co3O4 phase as revealed by x-ray diffraction. Under similar conditions of growth, highly oriented thin films of cobalt oxide grow on SrTiO3(100) and LaAlO3(100). The microstructure and the surface morphology of cobalt oxide films on glass, Si(100) and single crystalline substrates, SrTiO3(100) and LaAlO3(100) were studied by scanning electron microscopy. Optical properties of the films were studied by uv-visible-near IR spectrophotometry.

Effect of Nature of the Precursor on Crystallinity and Microstructure of MOCVD-Grown ZrO2 Thin Films

In the present work, we report the deposition of zirconia thin films on Si(100) at various substrate temperatures by low-pressure metalorganic chemical vapor deposition (MOCVD). Three different zirconium complexes, viz., tetrakis(2,4-pentadionato)zirconium(IV), [Zr(pd)4], tetrakis(2,2,6,6-tetramethyl-3,5-heptadionato)zirconium(IV), [Zr(thd)4], and tetrakis(t-butyl-3-oxo-butanoato)zirconium(IV), [Zr(tbob)4] are used as precursors. The relationship between the molecular structures of the precursors and their thermal properties, as examined by TG/DTA is presented. The films deposited using these precursors have distinctly different morphology, though all of them are of the cubic phase. The films grown from Zr(thd)4 are well crystallized, showing faceted growth at 575°C, whereas the films grown from Zr(pd)4 and Zr(tbob)4 are not well crystallized, and display cracks. These differences in the observed microstructure may be attributed to the different chemical decomposition pathways of the precursors during the film growth, which influence the nucleation and the growth processes. This is also evidenced by the different kinetics of growth from these three precursors under otherwise identical CVD conditions. The details of thin film deposition, and film microstructure analysis by XRD and SEM is presented. The dielectric behavior of the films deposited from different precursors, as studied by C-V measurements, are compared.

Time Evolution of the Microstructure of VO2(B) Films Deposited on Glass by MOCVD

Thin films of VO2(B), a metastable polymorph of vanadium dioxide, have been grown on glass by low-pressure metalorganic chemical vapor deposition (MOCVD). The films grown for 90 minutes have atypical microstructure, comprising micrometer-sized, island-like entities made up of numerous small, single-crystalline platelets (≅1 μm) emerging orthogonally from larger ones at the center. Microstructure evolution as a function of deposition time has been examined by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The metastable VO2(B) transforms to the stable rutile (R) phase at 550°C in inert ambient, which on cooling convert reversibly to M phase. Electron microscopy shows that annealing leads to the disintegration of the VO2(B) platelets into small crystallites of the rutile phase VO2(R), although the platelet morphology is retained. The magnitude of the jump in resistance at the semiconductor-to-metal, VO2(M)→VO2(R) phase transition depends on the arrangement of polycrystalline platelets in the films.