低阈值InGaAsP/InP PBH双稳激光器

于2010-11-23批量导入

不同介质膜的InP MIS结构界面陷阱的研究

于2010-11-23批量导入

等电子杂质Sb对InP中缺陷的影响

于2010-11-23批量导入

InGaAsP/InP CCTS双态激光器的纵模及偏振特性

于2010-11-23批量导入

1.5μmInGaAsP/InP P型衬底隐埋新月型（PBC）结构激光器

于2010-11-23批量导入

Annealing ambient controlled deep defect formation in InP

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.

Residual donors in undoped LEC InP

Undoped liquid encapsulated Czochralski (LEC) InP samples have been studied by Hall effect, glow discharge mass spectroscopy (GDMS) and infrared absorption spectroscopy. A systematic discrepancy has been found between the Han electron concentration and net donor concentration measured by GDMS. The electron concentration is always higher than the net shallow donor concentration by about (3-6)x10(15)cm(-3). A hydrogen indium vacancy complex donor defect VInH4 was detected regularly by infrared absorption spectroscopy in all undoped LEC InP samples. The fact can be explained by taking into account the existence of the donor defect in as-grown undoped LEC-InP.