Una propuesta de valoración de textos bilingües a través de textos narrativos

[ES]El objetivo de este trabajo es analizar las narraciones de hechos vividos escritas por alumnos bilingües de 8 años en euskara y en castellano. Trataremos de ver por una parte si las características del relato son las mismas en castellano y en euskara. También veremos si, independientemente de que algunos niños tengan como lengua familiar el vascuence y otros el castellano, se constata el aprendizaje de la lengua escrita en euskara en todos ellos, y si se observan aprendizajes similares para la lengua escrita castellana. Asimismo veremos si, como apuntan Idiazabal & Larringan (1997), los aprendizajes realizados a través de actividades didácticas en lengua vasca resultan efectivos también para el aprendizaje en castellano.

Alvará com força de Lei, por que V. Magestade ha por bem estabelecer, que da publicação delle em diante, os Administradores, Feitores, e Caixeiros, ou quaesquer outras pessoas, que servirem a Companhia Geral do Grão Pará, e Maranhão em qualquer dos Portos do Ultramar, não possão per si, ou por interpostas pessoas directa, ou indirectamente fazer commercio algum particular, ou interessar-se com as pessoas, que o fizerem, em quanto forem pagos, ou constituidos para o manejo do commercio geral da dita Companhia : tudo na forma assima declarada : para Vossa Magestade ver : José Thomás de Sá o fez

Ao alto do título: Sebastião Joseph de Carvalho e Mello.

Chronica do Serenissimo Senhor Rei D. Manoel / escrita por Damião de Goes ; e novamente dada a luz, e offerecida ao Illustrissimo Senhor D. Rodrigo Antonio de Noronha, e Menezes por Reinerio Bocache

Referência: Library of Congress - Online Catalog.

El dibujo y la ilustración como actores en la comunicación social impresa: análisis del proceso de comunicación de las ilustraciones dibujadas, percibidas como textos visuales en el proceso de la comunicación social escrita en periódicos y revistas portuguesas en los años 1999 y 2000

348 p.: gráf. Nota: tesis impresa en español y portugués, defendida en ambos idiomas

Caracterización estructural y magnética de aleaciones intermetálicas Fe-Al-Si mediante espectroscopia Mössbauer

253 p.

Disminución de la Ansiedad Estado previa al Cateterismo Cardiaco programado tras una intervención de enfermería

Los pacientes sometidos a cateterismo cardíaco (CC) experimentan niveles significativos de ansiedad relacionados con el procedimiento y puede ser percibido como una amenaza. Es fundamental por ello desarrollar estrategias de educación que se centren en las necesidades psicológicas y fisiológicas, manteniendo una información ordenada y clara, con el propósito de manejar y prevenir las complicaciones que se pueden presentar. El objetivo de este estudio es conocer si disminuye la ansiedad del paciente por medio de una intervención educativa enfermera, previa a la realización por primera vez del CC programado e Identificar el nivel de conocimientos sobre la prueba, el grado de satisfacción y confianza tras los cuidados enfermeros. Basado tanto en la información verbal, escrita y visualizada por medio de CD, como por la realización de técnicas cognitivas-conductuales. Apoyado por musicoterapia durante el periodo de espera previo al inicio del CC. Metodología: Sera un estudio experimental de ensayo clínico aleatorio, desarrollado en el Hospital Universitario Cruces (País Vasco-España), donde se crearan dos grupos: grupo control (pacientes antes de aplicar la intervención educativa, es decir, con la atención habitual) y grupo experimental (pacientes a los que se les aplica la intervención educativa).Formaran parte los primeros 225 pacientes mayores de 18 años que cumplan los requisitos de inclusión. Considero que es justificable la realización de este estudio, puesto que permitirá comprobar la eficacia de una intervención educativa de enfermería contribuyendo así a la disminución de la ansiedad y por consiguiente se podría protocolizar la intervención previa al procedimiento.

High-coherence hybrid Si/III-V semiconductor lasers

The relentlessly increasing demand for network bandwidth, driven primarily by Internet-based services such as mobile computing, cloud storage and video-on-demand, calls for more efficient utilization of the available communication spectrum, as that afforded by the resurging DSP-powered coherent optical communications. Encoding information in the phase of the optical carrier, using multilevel phase modulationformats, and employing coherent detection at the receiver allows for enhanced spectral efficiency and thus enables increased network capacity. The distributed feedback semiconductor laser (DFB) has served as the near exclusive light source powering the fiber optic, long-haul network for over 30 years. The transition to coherent communication systems is pushing the DFB laser to the limits of its abilities. This is due to its limited temporal coherence that directly translates into the number of different phases that can be imparted to a single optical pulse and thus to the data capacity. Temporal coherence, most commonly quantified in the spectral linewidth Δν, is limited by phase noise, result of quantum-mandated spontaneous emission of photons due to random recombination of carriers in the active region of the laser.

In this work we develop a generically new type of semiconductor laser with the requisite coherence properties. We demonstrate electrically driven lasers characterized by a quantum noise-limited spectral linewidth as low as 18 kHz. This narrow linewidth is result of a fundamentally new laser design philosophy that separates the functions of photon generation and storage and is enabled by a hybrid Si/III-V integration platform. Photons generated in the active region of the III-V material are readily stored away in the low loss Si that hosts the bulk of the laser field, thereby enabling high-Q photon storage. The storage of a large number of coherent quanta acts as an optical flywheel, which by its inertia reduces the effect of the spontaneous emission-mandated phase perturbations on the laser field, while the enhanced photon lifetime effectively reduces the emission rate of incoherent quanta into the lasing mode. Narrow linewidths are obtained over a wavelength bandwidth spanning the entire optical communication C-band (1530-1575nm) at only a fraction of the input power required by conventional DFB lasers. The results presented in this thesis hold great promise for the large scale integration of lithographically tuned, high-coherence laser arrays for use in coherent communications, that will enable Tb/s-scale data capacities.

The ^(26)Al(p,γ)^(27)Si reaction : stellar origins of galactic ^(26)Al

To explain the ^(26)Mg isotopic anomaly seen in meteorites (^(26)Al daughter) as well as the observation of 1809-keV γ rays in the interstellar medium (live decay of 26Al) one must know, among other things, the destruction rate of ^(26)Al. Properties of states in ^(27)Si just above the ^(26)Al + p mass were investigated to determine the destruction rate of ^(26)Al via the ^(26)Al(p,γ)^(27)Si reaction at astrophysical temperatures.

Twenty micrograms of ^(26)Al were used to produce two types of Al_2O_3 targets by evaporation of the oxide. One was onto a thick platinum backing suitable for (p,γ) work, and the other onto a thin carbon foil for the (^3He,d) reaction.

The ^(26)Al(p,γ)^(27)Si excitation function, obtained using a germanium detector and voltage-ramped target, confirmed known resonances and revealed new ones at 770, 847, 876, 917, and 928 keV. Possible resonances below the lowest observed one at E_p = 286 keV were investigated using the ^(26)Al(^3He,d)^(27)Si proton-transfer reaction. States in 27Si corresponding to 196- and 286-keV proton resonances were observed. A possible resonance at 130 keV (postulated in prior work) was shown to have a strength of wγ less than 0.02 µeV.

By arranging four large Nal detector as a 47π calorimeter, the 196-keV proton resonance, and one at 247 keV, were observed directly, having wγ = 55± 9 and 10 ± 5 µeV, respectively.

Large uncertainties in the reaction rate have been reduced. At novae temperatures, the rate is about 100 times faster than that used in recent model calculations, casting some doubt on novae production of galactic ^(26)Al.

Measurement of the band bending and surface dipole at chemically functionalized Si(111)/vacuum interfaces

The core-level energy shifts observed using X-ray photoelectron spectroscopy (XPS) have been used to determine the band bending at Si(111) surfaces terminated with Si-Br, Si-H, and Si-CH₃ groups, respectively. The surface termination influenced the band bending, with the Si 2p_3/2 binding energy affected more by the surface chemistry than by the dopant type. The highest binding energies were measured on Si(111)-Br (whose Fermi level was positioned near the conduction band at the surface), followed by Si(111)-H, followed by Si(111)-CH₃ (whose Fermi level was positioned near mid-gap at the surface). Si(111)-CH₃ surfaces exposed to Br₂(g) yielded the lowest binding energies, with the Fermi level positioned between mid-gap and the valence band. The Fermi level position of Br₂(g)-exposed Si(111)-CH₃ was consistent with the presence of negatively charged bromine-containing ions on such surfaces. The binding energies of all of the species detected on the surface (C, O, Br) shifted with the band bending, illustrating the importance of isolating the effects of band bending when measuring chemical shifts on semiconductor surfaces. The influence of band bending was confirmed by surface photovoltage (SPV) measurements, which showed that the core levels shifted toward their flat-band values upon illumination. Where applicable, the contribution from the X-ray source to the SPV was isolated and quantified. Work functions were measured by ultraviolet photoelectron spectroscopy (UPS), allowing for calculation of the sign and magnitude of the surface dipole in such systems. The values of the surface dipoles were in good agreement with previous measurements as well as with electronegativity considerations. The binding energies of the adventitious carbon signals were affected by band bending as well as by the surface dipole. A model of band bending in which charged surface states are located exterior to the surface dipole is consistent with the XPS and UPS behavior of the chemically functionalized Si(111) surfaces investigated herein.