Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots

We have observed an unusual temperature sensitivity of the photoluminescence (PL) peak energy for InAs quantum dots grown on InAs quantum wires (QDOWs) on InP substrate. The net temperature shift of PL wavelength of the QDOWs ranges from 0.8 to -4. angstrom/degrees C depending upon the Si doping concentration in the samples. This unusual temperature behavior can be mainly ascribed to the stress amplification in the QDOWs when the thermal strain is transferred from the surrounding InAs wires. This offers an opportunity for realizing quantum dot laser devices with a temperature insensitive lasing wavelength. (c) 2006 Elsevier Ltd. All rights reserved.

Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures

The interband and intraband photocurrent properties of InAs/InAlAs/InP nanostructures have been studied. The doping effect on the photoluminescence properties of the quantum dots and the anisotropy of the quantum wire interband photocurrent properties are presented and discussed. With the help of interband excitation, an intraband photocurrent signal of the InAs nanostructures is observed. With the increase of the interband excitation power, the intraband photocurrent signal first increases and then decreases, which can be explained by the variance of the ground state occupation of the InAs nanostructures and the change of the mobility and lifetime of the electrons. The temperature dependence of the intraband photocurrent signal of the InAs nanostructures is also investigated.

Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness

We report on the photoluminescence (PL) properties of InAs/InAlAs/InP quantum wires (QWRs) with various InAs deposited thickness. The PL linewidth of the QWRs decreases with increasing InAs deposited thickness due to the different thicknesses of the QWRs and defects in the samples. The defects and lateral composition modulation of the InAlAs layers play an important role in the temperature-dependent PL properties of the samples. (c) 2005 Elsevier B.V. All rights reserved.

Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m

Self-organized InAs quantum dots (QDs) have been fabricated by molecular beam epitaxy and characterized by photoluminescence (PL). For both single- and multi-layer QDs, PL intensity of the first excited state is larger than that of the ground state at 15 K. Conversely, at room temperature (RT), PL intensity of the first excited state is smaller than that of the ground state. This result is explained by the phonon bottleneck effect. To the ground state, the PL intensities of the multi-layer QDs are larger than that of the single-layer QDs at 15 K, while the intensities are smaller than that of the single-layer QDs at RT. This is due to the defects in the multi-layer QD samples acting as the nonradiative recombination centers. The inter-diffusion of Ga and In atoms in the growth process of multi-layer QDs results in the PL blueshift of the ground state and broadening of the full-width at half-maximum (FWHM), which can be avoided by decreasing the spacers' growth temperature. At the spacers' growth temperature of 520degreesC, we have prepared the 5-layer QDs which emit near 1.3 mum with a FWHM of 31.7 meV at RT, and 27.9 meV at 77 K. (C) 2002 Published by Elsevier Science B.V.

Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots

We have investigated the effect of InAlAs/InGaAs cap layer on the optical properties of self-assembled InAs/GaAs quantum dots (QDs). We find that the photoluminescence emission energy, linewidth and the energy separation between the ground and first excited states of InAs QDs depend on the In composition and the thickness of thin InAlAs cap layer. Furthermore, the large energy separation of 103 meV was obtained from InAs/GaAs QDs with emission at 1.35 pm at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer

We have fabricated a quantum dot (QD) structure for long-wavelength temperature-insensitive semiconductor laser by introducing a combined InAlAs and InGaAs overgrowth layer on InAs/GaAs QDs. We found that QDs formed on GaAs (100) substrate by InAs deposition followed by the InAlAs and InGaAs combination layer demonstrate two effects: one is the photoluminescence peak redshift towards 1.35 mum at room temperature, the other is that the energy separation between the ground and first excited states can be up to 103 meV. These results are attributed to the fact that InAs/GaAs intermixing caused by In segregation at substrate temperature of 520 degreesC can be considerably suppressed by the thin InAlAs layer and the strain in the quantum dots can be reduced by the combined InAlAs and InGaAs layer. (C) 2002 American Institute of Physics.

Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy

The wetting layers (WL) in InAs/GaAs quantum-dot system have been studied by reflectance difference spectroscopy (RDS), in which two structures related to the heavy-hole (HH) and light-hole (LH) transitions in the WL have been observed. The evolution and segregation behaviors of WL during Stranski-Krastanow (SK) growth mode have been studied from the analysis of the WL-related optical transition energies. It has been found that the segregation coefficient of Indium atoms varies linearly with the InAs amount in WL. In addition, the effect of the growth temperature on the critical thickness for InAs island formation has also been studied. The critical thickness defined by the appearance of InAs dots, which is determined by AFM, shows a complex variation with the growth temperature. However, the critical thickness determined by RDS is almost constant in the range of 510-540 degrees C.

Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO

Wurtzite ZnO has many potential applications in optoelectronic devices, and the hydrogenated ZnO exhibits excellent photoelectronic properties compared to undoped ZnO; however, the structure of H-related defects is still unclear. In this article, the effects of hydrogen-plasma treatment and subsequent annealing on the electrical and optical properties of ZnO films were investigated by a combination of Hall measurement, Raman scattering, and photoluminescence. It is found that two types of hydrogen-related defects, namely, the interstitial hydrogen located at the bond-centered (H-BC) and the hydrogen trapped at a O vacancy (H-O), are responsible for the n-type background conductivity of ZnO films. Besides introducing two hydrogen-related donor states, the incorporated hydrogen passivates defects at grain boundaries. With increasing annealing temperatures, the unstable H-BC atoms gradually diffuse out of the ZnO films and part of them are converted into H-O, which gives rise to two anomalous Raman peaks at 275 and 510 cm(-1). These results help to clarify the relationship between the hydrogen-related defects in ZnO described in various studies and the free carriers that are produced by the introduction of hydrogen.

竹叶青蛇毒金属蛋白酶结构与功能的研究

出血性的蝰科蛇毒中含有丰富的蛇毒金属蛋白酶，本论文就竹叶青（Trimeresurus stejnegeri）蛇毒中的蛇毒金属蛋白酶的结构与功能进行研究。我们用生物化学手段从竹叶青（T.stejnegeri）的粗毒中分离纯化得到一个二聚体的P-IIIb亚型蛇毒金属蛋白酶，命名为TSV-DM。同时，用分子生物学方法从竹叶青（T.stejnegeri）的毒腺cDNA���库中克隆得到3个P-III型的蛇毒金属蛋白酶的cDNAs序列， 其中一个编码TSV-DM蛋白前体，另两个编码P-IIIc亚型的出血性蛇毒金属蛋白酶前体，分别命名为stejnihagin-A 和 stejnihagin-B。 经过阴离子层析和肝素亲和层析两步层析方法，我们从竹叶青（T. stejnegeri）蛇毒中分离纯化得到TSV-DM蛋白质，非还原条件下SDS-PAGE电泳表观分子量约110 kDa���还原条件下约为55 kDa���活性检测表明，TSV-DM降解牛纤维蛋白原A��链快于Bβ链，且呈剂量依赖关系。但不降解明胶，不诱导出血，不具有促凝或者抗凝活性，以及不诱导或者抑制血小板聚集。蛋白质N-末端测序表明TSV-DM的成熟蛋白N-末端封闭。利用肽指纹图谱确证了TSV-DM的编码cDNA���TSV-DM的cDNA���列编码622个氨基酸残基的蛋白前体，包括信号肽、前肽、金属蛋白酶区域、间隔区、去整合素样区域和富含半胱氨酸区域。TSV-DM与其他P-III型蛇毒金属蛋白酶的一级结构序列比对发现TSV-DM和诱导血管内皮细胞凋亡的P-IIIb亚型蛇毒金属蛋白酶具有高度的同源性。但是用人脐带静脉血管内皮细胞系ECV304细胞作为靶细胞检测TSV-DM的诱导血管内皮细胞凋亡活性发现，TSV-DM只能抑制ECV304细胞的增殖和诱导细胞形态从多角形的内皮细胞向成纤维细胞样的梭形状改变。电泳检测抽提的片断化DNA���及流式细胞仪检测TSV-DM处理的ECV304细胞的DNA���量变化均表明TSV-DM不能诱导ECV304细胞的凋亡。 Stejnihagin-A 和stejnihagin-B是用PCR方法从竹叶青（T.stejnegeri）毒腺cDNA���库中克隆得到的两个P-III型蛇毒金属蛋白酶前体的cDNAs。这两个cDNA���列均编码600个氨基酸残基的蛋白前体，包括信号肽、前肽、金属蛋白酶区域、间隔区、去整合素样区域和富含半胱氨酸区域。推导成熟肽的氨基酸序列分析结果表明，stejnihagin-A 和stejnihagin-B不仅在一级结构序列上和来源于黄绿烙铁头（Trimeresurus flavoviridis）的HR1b具有高度同源性，高达79%， 而且在他们的金属蛋白酶区域的第100个氨基酸残基位置上均有一保守的半胱氨酸残基。结合序列比对和进化树的分析，我们推测stejnihagin-A���stejnihagin-B和HR1b有可能组成一个新的P-III型蛇毒金属蛋白酶亚型，命名为P-IIIc亚型。

镉暴露下鱼体磷脂的代谢组学研究及安全评价

食品安全一直是世界各国密切关注的社会问题，直接关系人民群众的身体健康和社会稳定。代谢组学已广泛应用于毒理学机制研究、药物安全性评价等领域。将代谢组学技术应用于食品安全评价领域是一项有益的探索研究。目前我国许多水域镉含量超标，导致鱼类等水产品对镉的蓄积，对人体膳食健康造成威胁。 本文以鲫鱼为受试动物，开展室内水箱养殖实验，设定50g•L-1、500g•L-1两个镉浓度水平，共养殖25天，其中暴露期20天和净化期5天。通过镉含量测定和鱼肉磷脂代谢组学分析得到以下结论： 1）以暴露浓度、暴露时间、鱼体组织部位为因素，发现了鲫鱼对水环境中镉的积累和分布规律； 2）针对鱼肉开展磷脂代谢组学分析，①定性分析，通过质谱图解析基本确认了鱼肉中主要的磷脂分子的脂肪酸组成。②定量分析，采用HPLC定量分析暴露0天（K组）、10天（B组）、20天（D组）共计30个鱼肉样本中的磷脂酰胆碱（PC）含量， 发现K组与B组、B组与D组之间有显著性差异（P���0.05），K组与D组无显著性差异。表明暴露10天后PC含量普遍低于正常水平（暴露0天），暴露20天后PC含量基本恢复到正常水平。③模式识别分析，PLS-DA���成分分析可有效识别K、B、D三组样本。 3）分别从限量标准、膳食安全风险评估两个角度评价了鱼肉膳食安全风险。通过PC定量分析和主成分分析，发现鱼肉中PC总量可以作为指示鲫鱼受到镉暴露的生物标示物；通过磷脂代谢图谱与鱼肉镉含量PLS拟合模型分析有效表征和量化了鱼肉磷脂对镉暴露的代谢响应，探索性提出借助拟合模型，通过磷脂代谢图谱分析预测鱼肉样本的镉含量。 4）在食品安全风险评价方面，建议采用限量标准、膳食摄入量、代谢组学识别和模型预测分析等相结合的手段，对传统风险评估体系在继承的基础上加以科学性的扩充和完善。

长白山阔叶红松林土壤氮转化微生物作用的研究

自长白山北坡自然保护区采集阔叶红松林 A_0 和 A_1 层土壤。进行了微生物数量、土壤酶活性、微生物生物量、土壤速效氮及土壤中群体微生物氮转化测定；分离并鉴定了芽孢杆菌36株、产荧光假单胞菌34株，并对各优势菌株进行了氮转化活性的测定。A_0 层土壤在微生物数量、土壤酶活性、微生物生物量、土壤速效氮 (NH_4~+-N) 等方面明显高于A_1层。氨化作用、硝化作用速率也得到同样的结果；硝酸盐还原、固氮作用及同化作用速率两次采样测定的结果不同。而土壤速效氮 (NO_3~－N)是 A_1 高于 A_0层。芽孢杆菌的优势种是 B. megaterium 和B. cereus，产荧光假单胞菌的优势种是 P. fluorescens－F。所有分离到的芽孢杆菌及产荧光假单胞菌均能活跃地进行氨化作用。所有芽孢杆菌都能进行反硝化作用。而能进行反硝化作用的 P. fluorescens－F及 P. fluorescens－C其作用能力均高于 Bacillus S的20倍以上，同化作用是这两类菌的共同特征。不同种之间以及同种异株间进行氮转化速率的比较。有的差异很大。讨论了这两类菌的数量分布与土壤氮转化速率的关系。建立了反映土壤内部氮转化的模型。

滇杨(Populus yunnanensis)对增强紫外辐射、干旱和喷施脱落酸的生态生理响应

目前，随着全球气候变化的加剧，水分短缺更加明显。在干旱与半干旱地区，水分胁迫是影响植物存活和生长的主要限制因子。同时，随着大气平流层中臭氧浓度的减少，过量的紫外辐射(UV-B)到达地球表面，一些地区的植物不可避免地受到增强UV-B 和水分胁迫的共同作用。文献表明在UV-B 增强的情况下，干旱表现为减弱或增强UV-B 对植物的影响，这与种、品种有一定的相关性。另外，脱落酸(ABA)是近年来研究报道最多的信息调控物质，与植物抗旱性途径有较大的关系，但其对植株抗UV-B 的影响还有待于研究。本论文以滇杨(Populus yunnanensis)为模式植物，从形态和生理方面研究了增强UV-B、干旱和脱落酸对它的影响，并探讨了UV-B 与干旱的互作效应以及喷施脱落酸对植株抗旱性和抗UV-B 能力的影响。主要研究结果如下：1. 增强的UV-B 和干旱胁迫都影响了滇杨的形态生长和生理生化反应。它们都导致了滇杨植株的株高、基茎、整株叶面积、平均叶面积、总生物量和净光合速率的显著降低，使得叶片增厚，过氧化物酶(GPX)活性升高，脯氨酸和花色素苷含量增加，膜脂过氧化程度增大。不同的是干旱显著降低了植株叶片数目，增大了根/冠比(Rs)、细根/总根比(Ft)、提高了内源ABA 含量、碳同位素(δ13C)以及紫外吸收物质含量和超氧化物歧化酶(SOD)的活性，而UV-B 对它们没有影响。干旱与UV-B 的复合作用加剧了任一单独胁迫对植株的抑制，表现为更小的株高、基茎、整株叶面积、平均叶面积、总生物量，更低的光合作用和更高的MDA 含量。而且UV-B 辐射降低了干旱胁迫下生物量分配的可塑性，表现为降低了干旱情况下的Rs 和Ft，ABA 的含量也显著下降，复合胁迫下脯氨酸含量和过氧化氢酶(CAT)的活性比任一单独胁迫时都要低。这些实验结果表明，增强的UV-B 与干旱的复合胁迫加剧了对植株的抑制作用。II2. 干旱情况下同时施加外源ABA 提高了植株的根/冠比、细根/总根比和单位面积叶重，即提高了干旱胁迫下植株对生物量分配的可塑性。而且外源ABA 使干旱胁迫下的长期用水效率、ABA 含量、脯氨酸含量、GPX 活性进一步增加，并有效调节了活性氧代谢的平衡，抑制了受旱植株MDA 的增加。结果表明，外源ABA 的喷施提高了滇杨植株的抗旱性。3. 在增强的UV-B 情况下，外源ABA 加剧了UV-B 对滇杨形态生长的抑制效果，表现为进一步降低了滇杨植株的整株叶面积、平均叶面积、单位面积叶重和总生物量，而且ABA 还降低了UV-B 胁迫下的净光合速率和脯氨酸的含量，增大了MDA 的含量。通过以上的数据我们可以看出，外源ABA 虽然提高了滇杨植株的抗旱性，但却加剧了UV-B 胁迫对植株的抑制作用。Currently, drought is one of the most serious environmental stresses. In arid and semi-aridregions, drought is a major constraint imposed on tree survival and growth. The decrease ofozone layer leads to a significant increase in ultraviolet-B (UV-B, 280-320 nm) radiationreaching the earth surface. In some places, plants suffer both UV-B and water stresssimultaneously. Their combination will increase or decrease the sensitivity of plants to UV-Bstress which lies on the species. On the other hand, abscisic acid (ABA), as a plant homoneand growth regulator, is better for plants resistant to drought stress, but it is uncleared aboutthe relationship between exogenous ABA and supplemental UV-B. In the present study, weemployed Populus yunnanensis Dode as a model species to characterize the growth andecophysiological responses of woody plants to supplemental UV-B, drought and exogenous ABA. The results are as follows:1. Both supplemental UV-B and drought affected the morphological, physiological andbiochemical responses of P. yunnanensis. They decreased the plant height, basal diameter,total leaf area, average leaf area, biomass and photosynthesis, and increased specific leaf mass,the activity of guaiacol peroxidase (GPX), the content of proline, anthocyanins andmalondialdehyde (MDA). However, drought decreased the leaf number and increasedroot/shoot ratio, fine root/total ratio, the activity of superoxide dimutase (SOD) and thecontents of ABA, carbon isotope composition (δ13C), UV-absorbing compounds. Whilesupplemental UV-B had no effects on them. The combination of drought and UV-Baugmented the growth inhibtion acting as further lower plant height and smaller basaldiameter, leaf area, biomass and higher MDA content. And compared with drought stress,root/shoot ratio and fine root/total root ratio decreased under the combination stresses. The photosynthesis, proline content and Catalase (CAT) activity became lower under combinationstresses than that of either stress lonely. According to these results, we suggested that,compared with the effect of stress lonely, the combination of supplemental UV-B and droughtdid not mitigate the harmful effect, but augmented it.2. Under drought conditions, exogenous ABA increased root/shoot ratio, fine root/total rootratio and the specific leaf mass. That was to say exogenous ABA increased plant plasticityunder drought conditions. Also ABA content, proline content, activity of GPX and δ13C wereenhanced further. In addition the enhancement of MDA was restrained. So the resultssuggested that exogenous ABA increased the seedling capacity of resistance to drought.3. Under supplemental UV-B conditions, exogenous ABA augmented the growth restrain ofUV-B to seedlings, which acted as further decreased leaf area, specific leaf mass and biomass.Compared with UV-B stress alone, proline content and photosynthesis were decreased andMDA content was increased under the combination of UV-B and ABA. These resultssuggested that although exogenous ABA increased the seedling capacity of resistance todrought, it augmented the growth restrain of supplemental UV-B to P. yunnanensis.