Structural modification of C-doped SiO2 induced by swift heavy ion irradiations

Thermally grown amorphous SiO2 samples were implanted at room temperature (RT) with 120 keV C-ions to a dose ranging from 1.0 x 10(16) to 8.6 x 10(17)C ions/cm(2), then irradiated at RT with 950 MeV Pb, 345 or 1754 MeV Xe ions to a fluence in the region from 1.0 x 10(11) to 3.8 x 10(12) ions/cm(2), respectively. The irradiated samples were investigated using micro-FTIR and micro-Raman spectroscopes. It was found that new chemical bonds such as Si-C, C=C(O), C C and Si(C)-O-C bonds formed significantly in the C-doped SiO2 films after heavy ion irradiations. The evolution of Si-O-C bonds and possible mechanism of structural modification in C-doped SiO2 induced by swift heavy ion irradiations were discussed.

Color center formation in alpha-Al2O3 induced by high energy heavy ions

Single crystals of alpha-alumina were irradiated at room temperature with 1.157 (GeVFe)-Fe-56, 1.755 (GeVXe)-Xe-136 and 2.636 (GeVU)-U-238 ions to fluences range from 8.7 x 10(9) to 6 x 10(12) ions/cm(2). Virgin and irradiated samples were investigated by ultraviolet visible absorption measurements. The investigation reveals the presence of various color centers (F, F+, F-2(2+), F-2(+) and F-2 centers) appearing in the irradiated samples. It is found that the ratio of peak absorbance of F-2 to F centers increases with the increase of the atomic numbers of the incident ions from Fe, Xe to U ions, so do the absorbance ratio of F-2(2+) to F+ centers and of large defect cluster to F centers, indicating that larger defect clusters are preferred to be produced under heavier ion irradiation. Largest color center production cross-section was found for the U ion irradiation. The number density of single anion vacancy scales better with the energy deposition through processes of nuclear stopping, indicating that the nuclear energy loss processes determines the production of F-type defects in heavy ion irradiated alpha-alumina.

Temperature annealing of tracks induced by ion irradiation of graphite

Highly oriented pyrolytic graphite (HOPG) samples were irradiated by Xe ions of initial kinetic energy of 3 MeV/u. The irradiations were performed at temperatures of 500 and 800 K. Scanning tunneling microscopy (STM) images show that the tracks occasionally have elongated structures under high-temperature irradiation. The track creation yield at 800 K is by three orders of magnitude smaller compared to that obtained during room-temperature irradiation. STM and Raman spectra show that amorphization occurs in graphite samples irradiated at 500 K to higher fluences, but not at 800 K. The obtained experimental results clearly reveal that the irradiation under high temperature causes track annealing.

Melting of Au and Al in nanometer Fe/Au and Fe/Al multilayers under swift heavy ions: A thermal spike study

Knowing that Fe is sensitive to swift heavy ion irradiations whereas Au and Al are not, the behavior of nanometric metallic multilayer systems, like [Fe(3 nm)/Au(x)](y) and [Fe(3 nm)/Al(x)](y) with x ranging between 1 and 10 mn, were studied within the inelastic thermal spike model. In addition to the usual cylindrical geometry of energy dissipation perpendicular to the ion projectile direction, the heat transport along the ion path was implemented in the electronic and atomic sub-systems. The simulations were performed using three different values of linear energy transfer corresponding to 3 MeV/u of Pb-208, Xe-132 and Kr-84 ions. For the Fe/Au system, evidence of appearance of a molten phase was found in the entire Au layer, provided the Au thickness is less than 7 nm and 3 nm for Pb and Xe ions, respectively. For the Fe/Al(x) system irradiated with Pb ions, the Al layers with a thickness less than 4 nm melt along the entire ion track. Surprisingly, the Fe layer does not melt if the Al thickness is larger than 2 nm, although the deposited energy surpasses the electronic stopping power threshold of track formation in Fe. For Kr ions melting does not occur in any of the multilayer systems.

OVERVIEW ON THE HIRFL-CSR FACILITY

The status of the HIRFL (Heavy Ion Facility in Lanzhou) - Cooler Storage Ring (CSR) at the IMP is reported. The main physics goals at the HIRFL-CSR are the researches on nuclear structure and decay property, EOS of nuclear matter, hadron physics, highly charged atomic physics, high energy density physics, nuclear astrophysics, and applications for cancer therapy, space industries, materials and biology sciences. The HIRFL-CSR is the first ion cooler-storage-ring system in China, which consists of a main ring (CSRm), an experimental ring (CSRe) and a radioactive beamline (RIBLL2). The two existing cyclotrons SFC (K=70) and SSC (K=450) are used as its injectors. The 7MeV/u12C6+ ions were stored successfully in CSRm with the stripping injection in January 2006. After that, realized were the accelerations of C-12(6+), Ar-36(18+), Kr-78(28+) and Xe-129(27+) ions with energies of 1GeV/u, 1GeV/u, 450 MeV/u and 235 MeV/u, respectively, including accumulation, electron cooling and acceleration. In 2008, the first two isochronous mass measurement experiments with the primary beams of Ar-36(18+) and Kr-78(28+) were performed at CSRe with the Delta p/p similar to 10(-5).

Raman investigation of ion-implanted ZnO films

ZnO thin films were implanted at room temperature with 80 keV N+ or 400 keV Xe+ ions. The implantation fluences of N+ and Xe+ ranged from 5.0 x 10(14) to 1.0 x 10(17)/cm(2), and from 2.0 x 10(14) to 5.0 x 10(15)/cm(2), respectively. The samples were analyzed using Raman spectroscopy and the Raman scattering modes of the N- and Xe-ion implanted samples varying with implantation fluences were investigated. It was found that Raman peaks (bands) at 130 and 578 cm(-1) appeared in the spectra of ion-implanted ZnO samples, which are independent of the ion species, whereas a new peak at 274 cm(-1) was found only in N-ion implanted samples, and Raman band at 470 cm(-1) was found clearly in Xe-ion implanted samples. The relative intensity (peak area) increased with the increasing of the implantation fluences. From the comparison of the Raman spectra of N- and Xe-ion implanted ZnO samples and considering the damage induced by the ions, we analyzed the origin of the observed new Raman peaks (bands) and discussed the structure changes of ZnO films induced by N- and Xe-ion implantations.

离子注入ZnO薄膜的拉曼光谱研究；Raman investigation of ion-implanted ZnO films

室温下,用80keVN+和400keVXe+离子注入ZnO薄膜,注入剂量分别为5.0×1014—1.0×1017/cm2和2.0×1014—5.0×1015/cm2.利用拉曼散射技术对注入前后的ZnO薄膜进行光谱测量和分析,研究了样品的拉曼光谱随离子注入剂量的变化规律.实验结果发现,未进行离子注入的样品在99,435cm-1处出现两个ZnO六方纤锌相的特征峰E2low和E2high;N+和Xe+注入样品在130和578cm-1附近均出现新峰(包),N+注入样品还在274cm-1出现新峰,而Xe+注入样品在470cm-1附近出现另一新峰包,且这些新峰(包)的相对面积随注入剂量的增大而增大.通过N+和Xe+注入样品拉曼光谱的对比分析,并考虑到注入离子在样品中产生的原子位移损伤,对新峰(包)对应的振动模来源进行了分析,探索了离子注入在ZnO薄膜中引起的结构变化.

低速高电荷态重离子在C_(60)薄膜中引起的势效应研究；Studies of Slow Highly-charged Ion Irradiated C_(60) Films

为了研究低速高电荷态离子在C60薄膜中引起的势效应,用能量为200keV的高电荷态Xen+(n=3,10,13,15,17,20,22,23)离子辐照了C60薄膜。用原子力显微镜(AFM)和Raman散射技术分析了辐照过程中高电荷态Xen+离子所储存势能在C60薄膜中引起的效应,即势效应。AFM分析结果表明,辐照C60薄膜的表面粗糙度随辐照Xen+离子电荷态(即势能)的增加而减小,揭示了势效应的存在。而Raman分析结果表明,由于Xe离子的动能远大于其所储存的势能,因此,尽管有表面势效应的影响,但在Raman分析的深度范围内,弹性碰撞还是主导了C60薄膜的损伤过程。

Systematics of central heavy ion collisions in the 1A GeV regime

Using the large acceptance apparatus FOPI, we study central collisions in the reactions (energies in A GeV are given in parentheses): Ca-40 + Ca-40 (0.4, 0.6, 0.8, 1.0, 1.5, 1.93), Ni-58 + Ni-58 (0.15, 0.25, 0.4), Ru-96+Ru-96 (0.4, 1.0. 1.5), (96)zr+(96)zr 1.0, 1.5), Xe-129+CsI (0.15, 0.25, 0.4), Au-197 + Au-197 (0.09, 0.12, 0.15, 0.25, 0.4, 0.6, 0.8, 1.0, 1.2, 1.5). The observables include cluster multiplicities, longitudinal and transverse rapidity distributions and stopping, and radial flow. The data are compared to earlier data where possible and to transport model simulations. (C) 2010 Elsevier B.V. All rights reserved.

Shell effect on stabilization processes following multi-electron transfer in slow Arq+-Ar (g=6-9, 11) collisions

We experimentally investigate the shell effect on the stabilization processes following the multi-electron transfer in slow collisions of Arq+-Ar (q = 6-9, It) The relative cross-section ratios of multi-electron transfer and of the subsequent stabilization with respect to single-electron capture are measured meanwhile compared with the theoretical results predicted by the classical over-barrier model. Our result indicates that the multi-electron transfer is dominant when the projectile charge is large and the subsequent stabilization shows a dramatic variation if the projectile L-shell configuration becomes open. It shows that the subsequent stabilization processes of multiply excited scattering ions have a strong dependence on the projectile shell. (C) 2010 Elsevier BV All rights reserved.

Theoretical study of the 4d photoabsorption of the Cs+ ion

Calculations of the 4d absolute photoabsorption cross sections of the Xe-like Cs+ ion covering the energy region from 80 to 190 eV have been performed by using the multi-configuration Dirac-Fock method. The calculated cross sections are compared with the absolute experimental photoabsorption cross-section spectrum (Kjeldsen et al 2002 J. Phys. B: At. Mol. Opt. Phys. 35 2845) and other available theoretical results. In the 80-90 eV region, the discrete structure resulting from photoexcitation of a 4d electron into nf and np orbits are successfully identified. Above the 4d threshold, i.e. in the 90-190 eV energy region, a reasonable agreement between experiment and computations is found for the intense 4d -> epsilon f shape resonance.

Production of highly charged ion beams with SECRAL

Superconducting electron cyclotron resonance ion source with advanced design in Lanzhou (SECRAL) is an all-superconducting-magnet electron cyclotron resonance ion source (ECRIS) for the production of intense highly charged ion beams to meet the requirements of the Heavy Ion Research Facility in Lanzhou (HIRFL). To further enhance the performance of SECRAL, an aluminum chamber has been installed inside a 1.5 mm thick Ta liner used for the reduction of x-ray irradiation at the high voltage insulator. With double-frequency (18+14.5 GHz) heating and at maximum total microwave power of 2.0 kW, SECRAL has successfully produced quite a few very highly charged Xe ion beams, such as 10 e mu A of Xe37+, 1 e mu A of Xe43+, and 0.16 e mu A of Ne-like Xe44+. To further explore the capability of the SECRAL in the production of highly charged heavy metal ion beams, a first test run on bismuth has been carried out recently. The main goal is to produce an intense Bi31+ beam for HIRFL accelerator and to have a feel how well the SECRAL can do in the production of very highly charged Bi beams. During the test, though at microwave power less than 3 kW, more than 150 e mu A of Bi31+, 22 e mu A of Bi41+, and 1.5 e mu A of Bi50+ have been produced. All of these results have again demonstrated the great capability of the SECRAL source. This article will present the detailed results and brief discussions to the production of highly charged ion beams with SECRAL.

New development of advanced superconducting electron cyclotron resonance ion source SECRAL (invited)

Superconducting electron cyclotron resonance ion source with advance design in Lanzhou (SECRAL) is an 18-28 GHz fully superconducting electron cyclotron resonance (ECR) ion source dedicated for highly charged heavy ion beam production. SECRAL, with an innovative superconducting magnet structure of solenoid-inside-sextupole and at lower frequency and lower rf power operation, may open a new way for developing compact and reliable high performance superconducting ECR ion source. One of the recent highlights achieved at SECRAL is that some new record beam currents for very high charge states were produced by 18 GHz or 18+14.5 GHz double frequency heating, such as 1 e mu A of Xe-129(43+), 22 e mu A of Bi-209(41+), and 1.5 e mu A of Bi-209(50+). To further enhance the performance of SECRAL, a 24 GHz/7 kW gyrotron microwave generator was installed and SECRAL was tested at 24 GHz. Some promising and exciting results at 24 GHz with new record highly charged ion beam intensities were produced, such as 455 e mu A of Xe-129(27+) and 152 e mu A of Xe-129(30+), although the commissioning time was limited within 3-4 weeks and rf power only 3-4 kW. Bremsstrahlung measurements at 24 GHz show that x-ray is much stronger with higher rf frequency, higher rf power. and higher minimum mirror magnetic field (minimum B). Preliminary emittance measurements indicate that SECRAL emittance at 24 GHz is slightly higher that at 18 GHz. SECRAL has been put into routine operation at 18 GHz for heavy ion research facility in Lanzhou (HIRFL) accelerator complex since May 2007. The total operation beam time from SECRAL for HIRFL accelerator has been more than 2000 h, and Xe-129(27+), Kr-78(19+), Bi-209(31+), and Ni-58(19+) beams were delivered. All of these new developments, the latest results, and long-term operation for the accelerator have again demonstrated that SECRAL is one of the best in the performance of ECR ion source for highly charged heavy ion beam production. Finally the future development of SECRAL will be presented.

新一代多电荷态离子源的研究

离子源发展存在两大热点问题：其一强流高电荷态离子的产生；其二强流金 属离子的产生。为了获得强流高电荷态离子，我们设计制造了全超导 ECR 离子 源 SECRAL（Superconducting ECR ion source with Advanced design in Lanzhou） ， 该离子源采用了全新的超导磁体结构形式，工作于 18～28GHz 的微波频率。根据 scaling laws 和实验经验，我们确定了 SECRAL 离子源所需要的约束磁场场形， 并针对新的磁体结构设想，通过 TOSCA 程序进行了详细的计算，成功地设计出 满足我们场形要求的超导磁体物理模型。据此，我们进一步进行了超导磁体的力 学结构分析，为磁体机械工艺设计提供了参考依据，保证了超导磁体结构设计的 可靠性。源体建成后，经过一系列的测试和调束实验，不但验证了我们的设计和 分析是合理的、可靠的，而且创造了许多项束流调试的新世界纪录，我们分别获 得了 810 A eμ O7+ 、730 A eμ Ar 11+ 、220 A eμ Ar 14+ 、73 A eμ Ar 16+ 、483 A eμ Xe 20+ 等束 流。为了获得强流中低电荷态金属离子束，我们尝试探索一种原理、结构、工作 模式全新的离子源－外部电子注入PIG离子源（E-PIG） 。目前，我们基本按照我 们的初期设想设计建造了 E-PIG离子源，设计中采用了外部电子枪注入电子、空 心阴极、特殊的场形等手段来提高金属离子的电荷态和流强。经过初步的起弧调 试，我们发现在初期的设计中还存在一些问题亟待进一步整改。

注碳二氧化硅中高能重离子辐照效应研究

本论文工作采用“低能离子注入+高能重离子辐照”实验方法，通过建立注 碳二氧化硅（SiO2）中结构变化和新结构形成与高能重离子辐照参数的关系，比 较系统地研究了注碳SiO2中高能重离子辐照效应， 并对辐照效应产生机理进行了 初步探讨。 实验中，先将120keV的C离子注入SiO2样品，再用Xe、Pb、U等多种高能 重离子辐照，然后用FTIR、Raman谱和TEM等分析技术对样品进行表征。 实验结果表明， 高能离子辐照注碳非晶SiO2在注碳区形成管状径迹， 在高能 离子引起的离子径迹及其附近区域形成了SiC、 碳团簇、 SiOC结构和CO/CO2分子 并观察到了局域纳米晶化现象，形成的 SiOC 和 SiC 具有链式和笼式结构。新结 构的形成与碳离子注入剂量、高能离子辐照剂量、电子能损以及总沉积能量密度 有关，并存在相应的阈值。根据实验结果并结合热峰模型，我们认为高能重离子 辐照可能在注碳SiO2中引起了一系列化学反应， 其驱动力来自于强电子激发引起 的热峰过程。研究结果还表明，“低能离子注入+高能重离子辐照”是合成具有 特殊功能材料的一种有效手段，通过选择合适的高能重离子辐照，实现有选择结 构相变，可以合成新型功能材料。