973 resultados para Nissler Junction


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This work presents preliminary results in the study of a novel structure for a laser scanned photodiode (LSP) type of image sensor. In order to increase the signal output, a stacked p-i-n-p-i-n structure with an intermediate light-blocking layer is used. The image and the scanning beam are incident through opposite sides of the sensor and their absorption is kept in separate junctions by an intermediate light-blocking layer. As in the usual LSP structure the scanning beam-induced photocurrent is dependent on the local illumination conditions of the image. The main difference between the two structures arises from the fact that in this new structure the image and the scanner have different optical paths leading to an increase in the photocurrent when the scanning beam is incident on a region illuminated on the image side of the sensor, while a decreasing in the photocurrent was observed in the single junction LSP. The results show that the structure can be successfully used as an image sensor even though some optimization is needed to enhance the performance of the device.

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Microcrystalline silicon is a two-phase material. Its composition can be interpreted as a series of grains of crystalline silicon imbedded in an amorphous silicon tissue, with a high concentration of dangling bonds in the transition regions. In this paper, results for the transport properties of a mu c-Si:H p-i-n junction obtained by means of two-dimensional numerical simulation are reported. The role played by the boundary regions between the crystalline grains and the amorphous matrix is taken into account and these regions are treated similar to a heterojunction interface. The device is analysed under AM1.5 illumination and the paper outlines the influence of the local electric field at the grain boundary transition regions on the internal electric configuration of the device and on the transport mechanism within the mu c-Si:H intrinsic layer.

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We present a palaeomagnetic study on 38 lava flows and 20 dykes encompassing the past 1.3 Myr on S. Jorge Island (Azores ArchipelagoNorth Atlantic Ocean). The sections sampled in the southeastern and central/western parts of the island record reversed and normal polarities, respectively. They indicate a mean palaeomagnetic pole (81.3 degrees N, 160.7 degrees E, K= 33 and A95= 3.4 degrees) with a latitude shallower than that expected from Geocentric Axial Dipole assumption, suggesting an effect of non-dipolar components of the Earth magnetic field. Virtual Geomagnetic Poles of eight flows and two dykes closely follow the contemporaneous records of the Cobb Mountain Subchron (ODP/DSDP programs) and constrain the age transition from reversed to normal polarity at ca. 1.207 +/- 0.017 Ma. Volcano flank instabilities, probably related to dyke emplacement along an NNWSSE direction, led to southwestward tilting of the lava pile towards the sea. Two spatially and temporally distinct dyke systems have been recognized on the island. The eastern is dominated by NNWSSE trending dykes emplaced before the end of the Matuyama Chron, whereas in the central/western parts the eruptive fissures oriented WNWESE controlled the westward growth of the S. Jorge Island during the Brunhes Chron. Both directions are consistent with the present-day regional stress conditions deduced from plate kinematics and tectonomorphology and suggest the emplacement of dykes along pre-existing fractures. The distinct timing and location of each dyke system likely results from a slight shift of the magmatic source.

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This paper discusses the photodiode capacitance dependence on imposed light and applied voltage using different devices. The first device is a double amorphous silicon pin-pin photodiode; the second one a crystalline pin diode and the last one a single pin amorphous silicon diode. Double amorphous silicon diodes can be used as (de)multiplexer devices for optical communications. For short range applications, using plastic optical fibres, the WDM (wavelength-division multiplexing) technique can be used in the visible light range to encode multiple signals. Experimental results consist on measurements of the photodiode capacitance under different conditions of imposed light and applied voltage. The relation between the capacitive effects of the double diode and the quality of the semiconductor internal junction will be analysed. The dynamics of charge accumulations will be measured when the photodiode is illuminated by a pulsed monochromatic light.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Dissertação apresentada ao Instituto Politécnico do Porto para obtenção do Grau de Mestre em Logística Orientada por: Professor Doutor José António Baptista da Costa Coorientada por: Dr. Lourenço Fernando Gomes Pinheiro

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Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia de Electrónica e Telecomunicações

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O estudo das curvas características de um transístor permite conhecer um conjunto de parâmetros essenciais à sua utilização tanto no domínio da amplificação de sinais como em circuitos de comutação. Deste estudo é possível obter dados em condições que muitas vezes não constam na documentação fornecida pelos fabricantes. O trabalho que aqui se apresenta consiste no desenvolvimento de um sistema que permite de forma simples, eficiente e económica obter as curvas características de um transístor (bipolar de junção, efeito de campo de junção e efeito de campo de metal-óxido semicondutor), podendo ainda ser utilizado como instrumento pedagógico na introdução ao estudo dos dispositivos semicondutores ou no projecto de amplificadores transistorizados. O sistema é constituído por uma unidade de condicionamento de sinal, uma unidade de processamento de dados (hardware) e por um programa informático que permite o processamento gráfico dos dados obtidos, isto é, traçar as curvas características do transístor. O seu princípio de funcionamento consiste na utilização de um conversor Digital-Analógico (DAC) como fonte de tensão variável, alimentando a base (TBJ) ou a porta (JFET e MOSFET) do dispositivo a testar. Um segundo conversor fornece a variação da tensão VCE ou VDS necessária à obtenção de cada uma das curvas. O controlo do processo é garantido por uma unidade de processamento local, baseada num microcontrolador da família 8051, responsável pela leitura dos valores em corrente e em tensão recorrendo a conversores Analógico-Digital (ADC). Depois de processados, os dados são transmitidos através de uma ligação USB para um computador no qual um programa procede à representação gráfica, das curvas características de saída e à determinação de outros parâmetros característicos do dispositivo semicondutor em teste. A utilização de componentes convencionais e a simplicidade construtiva do projecto tornam este sistema económico, de fácil utilização e flexível, pois permite com pequenas alterações

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Tese de Doutoramento, Ciências do Mar, especialidade de Biologia Marinha, 19 de Dezembro de 2015, Universidade dos Açores.

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Dissertação de Mestrado, Vulcanologia e Riscos Geológicos, 17 de Novembro de 2015, Universidade dos Açores.

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We investigate the influence of strong directional, or bonding, interactions on the phase diagram of complex fluids, and in particular on the liquid-vapour critical point. To this end we revisit a simple model and theory for associating fluids which consist of spherical particles having a hard-core repulsion, complemented by three short-ranged attractive sites on the surface (sticky spots). Two of the spots are of type A and one is of type B; the interactions between each pair of spots have strengths [image omitted], [image omitted] and [image omitted]. The theory is applied over the whole range of bonding strengths and results are interpreted in terms of the equilibrium cluster structures of the coexisting phases. In systems where unlike sites do not interact (i.e. where [image omitted]), the critical point exists all the way to [image omitted]. By contrast, when [image omitted], there is no critical point below a certain finite value of [image omitted]. These somewhat surprising results are rationalised in terms of the different network structures of the two systems: two long AA chains are linked by one BB bond (X-junction) in the former case, and by one AB bond (Y-junction) in the latter. The vapour-liquid transition may then be viewed as the condensation of these junctions and we find that X-junctions condense for any attractive [image omitted] (i.e. for any fraction of BB bonds), whereas condensation of the Y-junctions requires that [image omitted] be above a finite threshold (i.e. there must be a finite fraction of AB bonds).

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Trabalho de Projeto para obtenção do grau de Mestre em Engenharia Civil na Área de Especialização de Estruturas

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Relatório Final de Estágio apresentado à Escola Superior de Dança, com vista à obtenção do grau de Mestre em Ensino de Dança.