光系统Ⅱ反应中心细胞色素b559结构和功能的研究

植物已经演化出多种保护其免受强光抑制和破坏的机制，从而使植物体在自然界能够应付复杂多变的光照环境。虽然人们早就确定Cyt b-559存在于PSII反应中心内，但目前对其性质与功能的认识还不充分。本工作的目的就是研究Cyt b-559天然分子特性，探讨其生理功能和存在的意义。取得了一些有新意的结果： 1、依据PSII反应中心分离纯化的原理，应用更有效的层析介质DEAE-Sephacel，我们设计了快速高效的从菠菜和水稻中分离纯化Cyt b-559的方法和流程，获得了高纯度的样品。它们在非变性胶电泳中具有相同的泳动性。蛋白组分的HPLC结果证明，纯化的Cyt b-559的确由两个亚基组成，α亚基和β亚基的分子量用我们设计的适合于分析小蛋白的Tricine—SDS—PAGE方法准确测定为9.4kDa和4.5kDa。 2、利用HPLC技术分析了纯化的Cyt b-559样品的色素组成，结果表明Cytb-559中含有Chl α而不含类胡萝卜素分子，这一结果通过吸收光谱和共振拉曼光谱的分析得到进一步地证明。通过等电聚焦方法分析了Cyt b-559的等电点，发现其亚基的等电点相差很大，全蛋白的等电点与...更多D1、D2蛋白的等电点也不相同，推测在体内生理pH条件下它们具有相反带电性而在PSII组装中发挥作用。 3、低温荧光光谱的检测结果表明，Cyt b-559的荧光发射峰位在563nm和666nm;首次证明Cyt b-559可以发出荧光和将电子传递给结合在其上的辅助叶绿素，但传递能力比较低故而导致其荧光特性与PSII反应中心的不相同。Cytb-559的紫外荧光光谱表明Trp残基位于其内部的疏水区域，证明Cyt b-559中的芳香族氨基酸可能在其功能的发挥中起一定作用。 4、通过MCD的分析，发现Cyt b-559中血红素的MCD信号在540—580nm和400—440nm波段，而且光谱形状和强度与PSII反应中心的相一致，说明PSII反应中心该范围内的MCD信号中有Cyt b-559的贡献。FTIR光谱的测定结果证明Cyt b-559血红素的配体是组氨酸，其二级结构中α-螺旋占了一半。此外，还比较了Cyt b-559和PSII反应中心的膜脂成分，发现两者有很大的相似性。不同植物来源的Cyt b-559在许多性质上都表现出高度一致，从一个侧面证明Cyt b-559在进化中的保守性。 5、PSll反应中心发生光破坏时，原初电子供体P680己受到严重破坏。我们发现，在光抑制的最初一段时间内，Cyt b-559吸收峰值发生变化：在受体侧光抑制的条件下，其吸收峰值先略有增加而后才下降，而在供体侧光抑制条件下则相反，说明 Cyt b-559对光抑制的发生非常敏感，可能在光抑制早期保护PSll反应中心。 6、纯化的Cyt b-559的组氨酸含量在照光前后没有显著的变化，说明 PSll反应中心内被破坏的组氨酸不属于Cyt b-559。PSll反应中心所含的组氨酸中有些可被DEPC修饰，但我们的实验结果表明DEPC不能修饰Cyt b-559的组氨酸。这可能有利于Cyt b-559保护功能的发挥。 7、我们观察到，在两种光抑制条件下，LP Cyt b-559光还原和 HP Cyt b-559光氧化具有对pH值的依赖性，说明Cyt b-559在光保护中的作用不仅与其高低电势态有关，而且与其质子化程度有联系。CCCP促进HP Cyt -559释放质子，从而维持循环电子传递。DCBQ和 DCMU在很低浓度时都抑制 Cyt b-559光还原，前者不影响Cyt b-559光氧化而后者在CCCP存在时也会抑制Cyt b-559光氧化。 8、Cyt b-559有定位PSll反应中心其它蛋白的锚蛋白的作用。黄化苗转绿实验证明在 HP Cyt b-559的含量增加超过 45％以后放氧活性开始逐渐增加。Cytb－559从低电势态到高电势态的转变是放氧复合物组装到PSll反应中心的关键步骤之一。在植物正常生长时，Cyt b-559与 P680的其它电于供体发生竟争，起到安全阀门的作用。 9、在逆境条件下，Cyt b-559具有保护PSll反应中心免受强光破坏而起到“分于开关”的作用。我们的实验表明，在室温条件下存在通过Cyt b-559的环式电子流，存在从氧化态LP Cyt b-559到还原态HP Cyt b-559的一个循环，其中的氧化还原变化与质子化／去质子化反应相连。通过与其它血红素蛋白的比较，我们推测 Cyt b-559“分子开关”的关键是：光抑制情况下，铁原子与远端His之间的疏水空穴被氧自由基占据后使得铁进入叶琳中央孔中，迫使近端HIS向叶琳平面位移，从而引起 Cyt b-559构象改变，使电势态发生转变。

Low power all-optical switch in a passive InGaAsP multiple quantum well waveguide

We demonstrate the use of resonant bandfilling nonlinearity in an InGaAsP/InGaAsP Multiple Quantum Well (MQW) waveguide due to photogenerated carriers to obtain switching at pulse powers, which can readily be obtained from an erbium amplified diode laser source. In order to produce gating a polarisation rotation gate was used, which relies on an asymmetry in the nonlinear refraction on the principle axes of the waveguide.

HVIC switch for high-frequency power converters

A high voltage integrated circuit (HVIC) switch designed as a building block for power converters operating up to 13.56 MHz from off-line voltages is presented. A CMOS-compatible, 500 V power device process is used to integrate control circuitry with a high-speed MOS gate driver and high voltage lateral power MOSFET. Fabrication of the HVIC switches has proceeded in two stages. The first batch of devices showed switching times of less than 5 ns for the power switch and good high frequency performance of a level-shifter for driving half bridge converters. In the second phase, a switch that monolithically integrates all the elements required to form a complete high-frequency converter has been designed.

Negligible penalty all-optical routing using a 12 × 12 passive InP wavelength-selective router

This work demonstrates transmission at 2.5 Gbit/s across two wavelength-division multiplexing (WDM) network nodes, constructed using counter-propagating semiconductor optical amplifier (SOA) wavelength converters and an integrated wavelength-selective router separated by 45 km of fiber, with an overall penalty of 0.6 dB. Minimal degradation of the eye diagram is evident across the whole system. Full utilization of the capacity of the router would allow an aggregate 360-Gbit/s node capacity for a WDM channel of 2.5 Gb/s.

All-optical routing using a 12×12 passive InP wavelength selective router and tuneable wavelength conversion

All-optical routing of 2.5Gbit/s WDM signals across two cascaded Optical Cross Connects(OXCs) with a penalty of only 0.6dB has been demonstrated using tuneable wavelength converters and a passive WDM router.

Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch

Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO2 on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers.

Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.