A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes

The electroluminescence efficiency at room temperature and low temperature (15 K) in a wide-narrow-well InGaN/GaN light-emitting diode with a narrow last well (1.5 nm) and a narrow next-to-last barrier (5 nm) is investigated to study the efficiency droop phenomenon. A reduced droop in the wide wells and a reduced droop at low temperatures reveals that inferior hole transportation ability induced Auger recombination is the root for the droop at high excitation levels.

Effects of shape and magnetic field on the optical properties of wurtzite quantum rods

The optical properties of quantum rods in the absence and presence of the magnetic field are studied in the framework of effective-mass envelope function theory. The two-dimensional (2D) and 1D transition dipoles of wurtzite quantum rods are investigated. It is found that the transition dipoles change from 2D to 1D as the aspect ratio of the ellipsoid increases, in agreement with the experimental results. The linear polarization factors of optical transitions of quantum rods with critical aspect ratio are zero at every orientation of the wave propagation. So quantum rods with critical aspect ratio have isotropic transition dipoles. Due to the 2D or 1D transition dipoles, the linear polarization factors of optical transitions of quantum rods change from negative or positive values to zero as the orientation of the wave propagation changes from the x axis of the crystal structure to the z axis, in agreement with the experimental results. Under magnetic field applied along the z axis of the crystal structure, the negative linear polarization factors in the 2D transition dipole case decrease as the magnetic field increases, while under magnetic field applied along the x axis, the negative linear polarization factors increase as the magnetic field increases. The antisymmetric Hamiltonian is very important to these effects of the magnetic field. It is found that quantum rods with a given radius at a given temperature have dark excitons in a range of aspect ratio. The dimensions along the x, y axes of the crystal structure play opposite roles to the dimension along the z axis on the dark exciton phenomenon. Dark excitons become bright under appropriate magnetic field.

Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors

The influence of defects on the responsivity of GaN Schottky barrier ultraviolet photodetectors with n(-)-GaN/n(+)-GaN layer structures is investigated. It is found that employing undoped GaN instead of Si-doped GaN as the n(-)-GaN layer brings about a higher responsivity due to a lower Ga vacancy concentration. On the other hand, the dislocations may increase the recombination of electron-hole pairs and enhance the surface recombination in the photodetectors. Employing undoped GaN and reducing the dislocation density in the n(-)-GaN layer are necessary to improve the responsivity of Schottky barrier photodetectors. (c) 2007 American Institute of Physics.

The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE

High-Al-content InxAlyGa1-x-yN (x = 1-10%, y = 34-45%) quaternary alloys were grown on sapphire by radio-frequency plasma-excited molecular beam epitaxy. Rutherford back-scattering spectrometry, high resolution x-ray diffraction and cathodoluminescence were used to characterize the InAlGaN alloys. The experimental results show that InAlGaN with an appropriate Al/In ratio (near 4.7, which is a lattice-match to the GaN under-layer) has better crystal and optical quality than the InAlGaN alloys whose Al/In ratios are far from 4.7. Some cracks and V-defects occur in high-Al/In-ratio InAlGaN alloys. In the CL image, the cracks and V-defect regions are the emission-enhanced regions.

Bioactivity of Mg-ion-implanted zirconia and titanium

Titanium and zirconia are bioinert materials lacking bioactivity. In this work, surface modification of the two typical biomaterials is conducted by Mg-ion-implantation using a MEVVA ion source in an attempt to increase their bioactivity. Mg ions were implanted into zirconia and titanium with fluences ranging from 1 x 10(17) to 3 x 10(17) ions/cm(2) at 40 keV. The Mg-implanted samples, as well as control (unimplanted) samples, were immersed in SBF for 7 days and then removed to identify the presence of calcium and phosphate (Ca-P) coatings and to characterize their morphology and structure by SEM, XRD, and FT-IR. SEM observations confirm that globular aggregates are formed on the surfaces of the Mg-implanted zirconia and titanium while no precipitates are observed on the control samples. XRD and FT-IR analyses reveal that the deposits are carbonated hydroxyapatite (HAp). Our experimental results demonstrate that Mg-implantation improves the bioactivity of zirconia and titanium. Further, it is found that the degree of bioactivity is adjustable by the ion dose. Mechanisms are proposed to interpret the improvement of bioactivity as a result of Mg implantation and the difference in bioactivity between zirconia and titanium. (c) 2006 Elsevier B.V. All rights reserved.

Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition

The effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition is investigated. With the increase of trimethylalluminum (TMAl) flux, the crystal quality becomes worse, and the epilayer surface becomes rougher. An interesting phenomenon is that the growth rate of AlGaN decrease with increasing TMAl flux, which is opposite to the AlN growth rate dependence on the TMAl flux. All these effects are attributed to the different properties of At atoms due to the higher bond strength of Al-N compared with Ga-N, which lead to lower surface mobility and stronger competitive ability of Al atoms during the growth. The enhancement of the surface mobility of Al is especially important for improving the quality of AlGaN. (c) 2006 Elsevier B.V. All rights reserved.

Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes

Time-resolved light-current curves, spectra, and far-field distributions of ridge structure InGaN multiple quantum well laser diodes grown on sapphire substrate are measured with a temporal resolution of 0.1 ns under a pulsed current condition. Results show that the thermal lensing effect clearly improves the confinement of the higher order modes. The thermal lens leads to a lower threshold current for the higher order modes, a higher slope efficiency, and a change in the lasing mode of the device. The threshold current for the higher modes decreases by about 5 mA in every 10 ns in a pulse, and the slope efficiency increases by 7.5 times on the average when higher modes lase. (c) 2006 American Institute of Physics.

Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films

We investigate the effects of lightly Si doping on the minority carrier diffusion length in n-type GaN films by analyzing photovoltaic spectra and positron annihilation measurements. We find that the minority carrier diffusion length in undoped n-type GaN is much larger than in lightly Si-doped GaN. Positron annihilation analysis demonstrates that the concentration of Ga vacancies is much higher in lightly Si-doped GaN and suggests that the Ga vacancies instead of dislocations are responsible for the smaller minority carrier diffusion length in the investigated Si-doped GaN samples due to the effects of deep level defects. (c) 2006 American Institute of Physics.

Exciton states and optical spectra in CdSe nanocrystallite quantum dots

By using the hole effective-mass Hamiltonian for semiconductors with the wurtzite structure, we have studied the exciton states and optical spectra in CdSe nanocrystallite quantum dots. The intrinsic asymmetry of the hexagonal lattice structure and the effect of spin-orbital coupling (SOC) on the hole states are investigated. It is found that the strong SOC limit is a good approximation for hole states. The selection rules and oscillator strengths for optical transitions between the conduction- and valence-band states are obtained. The Coulomb interaction of exciton states is also taken into account. In order to identify the exciton states, we use the approximation of eliminating the coupling of Gamma(6)(X, Y) with Gamma(1)(Z) states. The results are found to account for most of the important features of the experimental photoluminescence excitation spectra of Norris ct nl. However, if the interaction between Gamma(6)(X, Y) and Gamma(1)(Z) states is ignored, the optically passive P-x state cannot become the ground hole state for small CdSe quantum dots of radius less than 30 Angstrom. It is suggested that the intrinsic asymmetry of the hexagonal lattice structure and the coupling of Gamma(6)(X,Y) with Gamma(1)(Z) states are important for understanding the "dark exciton" effect.

Energy band and acceptor binding energy of GaN and AlxGa1-xN

The hole effective-mass Hamiltonian for the semiconductors of wurtzite structure is established, and the effective-mass parameters of GaN and AlxGa1-xN are given. Besides the asymmetry in the z and x, y directions, the linear term of the momentum operator in the Hamiltonian is essential in determining the valence band structure, which is different from that of the zinc-blende structure. The binding energies of acceptor states are calculated by solving strictly the effective-mass equations. The binding energies of donor and acceptor for wurtzite GaN are 20 and 131, 97 meV, respectively, which are inconsistent with the recent experimental results. It is proposed that there are two kinds of acceptors in wurtzite GaN. One kind is the general acceptor such as C, substituting N, which satisfies the effective-mass theory, and the other includes Mg, Zn, Cd etc., the binding energy of which deviates from that given by the effective-mass theory. Experimentally, wurtzite GaN was grown by the MBE method, and the PL spectra were measured. Three main peaks are assigned to the DA transitions from the two kinds of acceptor. Some of the transitions were identified as coming from the cubic phase of GaN, which appears randomly within the predominantly hexagonal material. The binding energy of acceptor in ALN is about 239, 158 meV, that in AlxGa1-xN alloys (x approximate to 0.2) is 147, 111 meV, close to that in GaN. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Fabrication and Investigation of High Efficiency Evanescently Coupled Uni-Traveling Carrier Photodiodes

In this paper, an evanescently coupled uni-traveling carrier photodiodes (EC-UTC-PDs) have been fabricated and investigated, which can benefit from the incorporation of a multimode diluted waveguide of appropriate length with experiment-simulation comparison. A high responsibvity of 0.68 A/W at 1.55-mu m without an anti-reflection coating, -1 dB compression current of more than 19 mA, and a large -1 dB vertical alignment tolerance of 2.2 mu m were achieved.

Phase locking of fibre lasers by self-imaging resonator

Experimental demonstrations of the use of a self-imaging resonator in the phase locking of two fibre lasers are presented. The output power of the phase-locked fibre laser array exceeded 2 W Successful attempts of phase locking show that the fibre laser array is not only capable of producing high Output Power but also large on-axis intensity by this method.

卟啉LB膜结构表征和电性质研究

利用膜天平、紫外-可见分光光度计、红外光谱仪、电子显微镜以及X-射线衍射仪等手段研究了新合成的尚未见文献报道的材料的界面膜和LB膜的性质和结构，对卟啉LB膜导电特性和气敏特性也进行了初步研究，得到下述结论：（1）利用预处理的新方法研究了界面膜的性质，研究结果表明预处理过程能用于判别界面膜的存在状态。（2）随着取代基上碳原子数增加，分子在水面上占据表观截面积呈现增大趋势。（3）取代链的长度对膜的沉积类型有重要影响，短链取代卟啉仅能以Z型方式沉积，而长链取代卟啉能以Y或Z型方式沉积。（4）取代侧链的长度对卟吩环取向影响较小，几种化合物的取向角在30°- 40°之间。（5）花生酸与TPIAPP掺杂后可减弱卟啉分子在LB膜中的相互作用。（6）取代链长度对膜结构的有序性有影响。短链取代卟啉不能给出布拉格衍射峰。（7）混合膜中，由于卟啉的混杂使花生酸的相变向低温方向移动，并有熔程变长的现象。（8）所研究材料的LB膜面的内导电能力较差，加入NH_3和NO_2后膜的电导不发生显著变化。

哺乳动物新Y 染色体的退化和果蝇新基因起源模式的研究

进化生物学得益于近代分子生物学和当代基因组学的发展，已经脱 离了自达尔文时代起博物学式的观察和思辨性的研究状态。很多古老而又 经典的问题，因为在一些年轻的进化系统中的研究，绽放出其背后深刻的 机制。在本工作中，我们通过在模式物种果蝇和珍稀动物黑麂中的研究， 揭示了有关遗传的基本单位-- 基因是如何起源和消亡的，以及这些重要过 程背后的规律。 决定人类雄性的Y 染色体起源于一亿六千万年前X 染色体的同源 染色体。但现今Y 染色体上的基因数目仅仅是X 染色体的百分之一左 右。如此巨大的数目差异，是由于Y 染色体和X 染色体之间重组抑制以 后，大量的Y 染色体基因发生退化消亡所致。 由于哺乳动物的Y 染色体 大都非常古老，Y 退化的过程和机制一直以来无法得以深入研究。 在本工 作的前半部分，我们首次在中国特有的珍稀鹿科动物黑麂中报道鉴定了一 对行为和模式类似人类性染色体的常染色体。这对“新性染色体”(neosex) 仅仅起源于50 万年以内，由于雄性特异的染色体倒位，致使数以千计 的基因像Y 染色体连锁的基因那样，无法与其等位基因重组。对23 个新 Y 染色(neo-Y)体连锁的基因25kb 的蛋白编码区和它们35kb 的非编码区的 序列分析发现，与其他可重组区域相比，这些基因的遗传多态性显著降 低，并积累了改变氨基酸的有害突变。我们还首次用体内表达试验证明Y 染色体的基因在其顺式调控区域也发生了退化。这些积累在启动子或者非 翻译区域(UTR)的有害突变，将扰乱Y 染色体上基因的正常表达，并进一 步促进退化过程和剂量补偿效应以单个基因(gene-by-gene)的模式进化。 本论文的另外一部分工作主要研究了果蝇中新基因起源的总体模式 问题。对遗传新元件如何起源的兴趣，最早可以追溯到达尔文。近年来通 过对“年轻基因”的案例研究，我们已经知道通过基因重复，逆转座，水 平迁移和从头起源等机制可以产生新基因。但这些机制在全基因组水平对 新基因起源的贡献各自如何，以及以非编码区从头起源合成一个新的基因 是否普遍等重要问题一直未得到解答。我们利用比较基因组的手段，在6个果蝇全基因组中，通过12017 个黑腹果蝇基因序列，鉴定刻画了超过 300 个起源于不同时间点的新基因。我们对这些新基因的序列，结构和表 达模式的分析发现，串联重复在产生年轻的新基因过程中占了主导地位 (超过80%)。但是最后固定在群体内，有功能的新基因主要(44.1%)是散在 重复的形式。我们惊奇地发现非编码区从头起源的基因在新基因的起源过 程中也扮演了重要角色，产生了超过10%的有功能的新基因，并且大部分 都进化出了睾丸特异的表达模式。有大约30%的新基因通过招募其他基因 的编码区或者重复元件，形成了新的嵌合结构，暗示它们可能获得了新的 功能。最后，我们估计在果蝇中，每百万年将产生5 至11 个有功能的新 基因。

生长在尖晶石衬底上的GaN外延层的喇曼散射研究

在室温下测量了用MOVPE方法生长在尖晶石(MgAl_2O_4)衬底上的GaN外延层的一阶喇曼光谱。应用各种背散射和90°散射配置，测得了除低频E_2模外所有GaN的喇曼活性光学声子模。并且在X(Z,X)Z和X(Y,Y)Z配置下观测到了由A_1和E_2模混合形成的准TO和准LO模。所得结果与群论选择定则预计的一致。