Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes
| Data(s) |
2006
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|---|---|
| Resumo |
Time-resolved light-current curves, spectra, and far-field distributions of ridge structure InGaN multiple quantum well laser diodes grown on sapphire substrate are measured with a temporal resolution of 0.1 ns under a pulsed current condition. Results show that the thermal lensing effect clearly improves the confinement of the higher order modes. The thermal lens leads to a lower threshold current for the higher order modes, a higher slope efficiency, and a change in the lasing mode of the device. The threshold current for the higher modes decreases by about 5 mA in every 10 ns in a pulse, and the slope efficiency increases by 7.5 times on the average when higher modes lase. (c) 2006 American Institute of Physics. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Li DY (Li D. Y.); Huang YZ (Huang Y. Z.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Ye XJ (Ye X. J.); Chong M (Chong M.); Chen LH (Chen L. H.); Yang H (Yang H.); Liang JW (Liang J. W.) .Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes ,JOURNAL OF APPLIED PHYSICS,2006 ,100(4):Art.No.046101 |
| Palavras-Chave | #光电子学 #LINEWIDTH ENHANCEMENT FACTOR #WAVE-GUIDE LASER #GAN SUBSTRATE #INDEX #TEMPERATURE #GAIN |
| Tipo |
期刊论文 |
