Peak identification for PCDD/Fs in environmental samples at different temperature programs

A method has been developed for peak recognition of 136 polychlorinated dibenzo-p-dioxins (PCDDs) and polychlorinated dibenzofurans (PCDFs) at different temperature programs. Their retention behaviours are predicted on the basis of an identification database of retention values (A, B) of gas chromatography. By the retention times of C-13 labelled 2,3,7,8-substituted PCDD/F internal standards, the retentions of all PCDDs and PCDFs can be calculated. After comparison with the retentions of practical environmental samples, the predicted values have been proved to be very accurate. (C) 2000 Elsevier Science Ltd. All rights reserved.

Computer assisted peak recognition for polychlorinated dibenzo-p-dioxins (PCDD) and polychlorinated dibenzofurans (PCDF) in environmental samples

A software has been developed for the peak recognition of 136 polychlorinated dibenzo-p-dioxins (PCDD) and polychlorinated dibenzofurans (PCDF) after high resolution gas chromatography coupled with mass spectrometry (HRGC/HRMS). Based on the retention times of C-13 labelled 2,3,7,8-substituted PCDD/F internal standards, the retention times of all PCDD and PCDF can be calibrated automatically and accurately. Therefore, it is very convenient to identify the peaks by comparing the retention of samples and the calibrated retention times of their chromatograms. Hence, this approach is very significant because it is impossible to obtain always a standard chromatogram and PCDD/F analysis are very expensive and time consuming. The calibration results can be transferred to Excel for calculation. The approach is a first step to store costly and environmentally relevant data for future application.

IMPROVED PEAK POWER METHOD FOR MEASURING FREQUENCY RESPONSES OF PHOTODETECTORS IN A SELF-HETERODYNE SYSTEM

An improved peak power method for measuring frequency responses of photodetectors in a self-heterodyne system consisting of a distributed Bragg reflector laser is proposed. The time-resolved spectrum technique is used to measure the peak power of the beat signal and the intrinsic linewidth of heat signal for calibration. The experimental results show that the impact of the thermal-induced frequency drift, which is the main reason for producing an error in measurement by conventional peak power method and spectrum power method, can be removed.

ac gate-induced Fano resonance and peak splitting of conductance in a quantum dot

We have investigated the conductance of a quantum dot system suffering an anti-symmetric ac gate voltage which induces the transition between dot levels in the linear regime at zero temperature in the rotating wave approximation. Interesting Fano resonances appear on one side of the displaced resonant tunnelling peaks for the nonresonant case or the peak splitting for the resonant case. The line shape of conductance (vs Fermi energy) near each level of the quantum dot can be decomposed into two profiles: a Breit-Wigner peak and a Fano profile, or a Breit-Wigner peak and a dip in both cases.

Gain measurement and anomalous decrease of peak gain at long wavelength for InAs/GaAs quantum-dot lasers

Mode gain spectrum is measured by the Fourier series expansion method for InAs/GaAs quantum-dot (QD) lasers with seven stacks of QDs at different injection currents. Gain spectra with distinctive peaks are observed at the short and long wavelengths of about 1210 nm and 1300 nm. For a QD laser with the cavity length of 1060 mu m, the peak gain of the long wavelength first increases slowly or even decreases with the injection current as the peak gain of the short wavelength increases quickly, and finally increases quickly before approaching the saturated values as the injection current further increases.

Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

This paper reports that lnAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm(2) has been obtained for diodes with AlAs barriers of ten monolayers, and an In0.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.

A differential recursive scheme for suppression of Peak to average power ratio for OFDM

A differential recursive scheme for suppression of Peak to average power ratio (PAPR) for Orthogonal frequency division multiplexing (OFDM) signal is proposed in this thesis. The pseudo-randomized modulating vector for the subcarrier series is differentially phase-encoded between successive components in frequency domain first, and recursion manipulates several samples of Inverse fast Fourier transformation (IFFT) output in time domain. Theoretical analysis and experimental result exhibit advantage of differential recursive scheme over direct output scheme in PAPR suppression. And the overall block diagram of the scheme is also given.

Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots

We have observed an unusual temperature sensitivity of the photoluminescence (PL) peak energy for InAs quantum dots grown on InAs quantum wires (QDOWs) on InP substrate. The net temperature shift of PL wavelength of the QDOWs ranges from 0.8 to -4. angstrom/degrees C depending upon the Si doping concentration in the samples. This unusual temperature behavior can be mainly ascribed to the stress amplification in the QDOWs when the thermal strain is transferred from the surrounding InAs wires. This offers an opportunity for realizing quantum dot laser devices with a temperature insensitive lasing wavelength. (c) 2006 Elsevier Ltd. All rights reserved.

High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers

A new method of measuring the thickness of GaN epilayers on sapphire (0 0 0 1) substrates by using double crystal X-ray diffraction was proposed. The ratio of the integrated intensity between the GaN epilayer and the sapphire substrate showed a linear relationship with the GaN epilayer thickness up to 2.12 mum. It is practical and convenient to measure the GaN epilayer thickness using this ratio, and can mostly eliminate the effect of the reabsorption, the extinction and other scattering factors of the GaN epilayers. (C) 2003 Elsevier Science B.V. All rights reserved.

Fine structure of the plasmon resonance absorption peak of Ag nanoparticles embedded in partially oxidized Si matrix

Ag/Si nanocomposite films were prepared by the radio-frequency magnetron cosputtering method. The fine structure of the plasmon resonance absorption peak was found in film samples. X-ray photoelectron spectroscopy analysis indicated that the samples were composed of a two-layer structure, which accounted for the structure of the optical absorption spectra. The peak located near 445 nm is the plasmon resonance absorption peak of Ag nanoparticles embedded in a partially oxidized Si matrix. Its intensity decreases with decreasing film thickness and disappears in a very thin sample. The peak located near 380 nm originates from the plasmon resonance absorption of the thoroughly oxidized surface layer of the sample. Its intensity does not change with increasing thickness, but it cannot be observed in the very thick sample. (C) 2001 American Institute of Physics.

Generation of the high efficiency high peak-power femtosecond blue optical pulse

The analysis and calculation of the compensation for the phase mismatch of the frequency-doubling using the frequency space chirp introduced from prisms are made. The result shows that suitable lens can compensate the phase mismatch in a certain extent resulting from wide femtosecond spectrum when the spectrum is space chirped. By means of this method, the experiment of second harmonic generation is carried out using a home-made femtosecond KLM Ti:sapphire laser and BBO crystal. The conversion efficiency of SHG is 63 %. The average output power of blue light is 320 mW. The central wavelength is 420 nm. The spectrum bandwidth is 5.5 nm. It can sustain the pulse width of 33.6 fs. The tuning range of blue light is 404-420 nm,when the femtosecond Ti:sapphire optical pulse is tuned using the prisms in the cavity.

MULTIPLE PEAK PHOTOLUMINESCENCE OF POROUS SILICON

The photoluminescence (PL) response of porous silicon is usually in the form of a single broad peak. Recently, however, PL response with two peaks has been reported. Here we report the observation of multiple peaks in the PL spectrum of porous silicon. A simple modeling of the line shape indicates that four peaks exist within the response curve, and analysis suggests that the PL of porous silicon is derived from quantum confinement in the silicon crystallites. The line shapes can be due to either minibands within the conduction and valence bands or crystallite size variation or a combination of the two.

森林流域单元水文模型的构建与应用

目前全球缺水、水污染、洪涝灾害以及水土流失仍然非常严重，尤其在我国北方地区。流域水文模型可用来进行不同需水管理的情景分析，为解决我国水问题提供科学依据。分布式水文模型是流域水文模型的发展方向，具有显著特点：1）应用前景广泛，不仅可以模拟流域水文过程，还可以协助模拟泥沙或污染物的运移过程，为水利工程设计、水土保持、环境保护等领域提供技术支持；2）能够预测流域土地利用或气候变化下的流域水文响应过程变化，为管理部门提供决策支持；3）模型所需要的参数全部具有物理意义，可通过实际测量确定，适合模拟实测系列较短或是无观测流域的水文过程；4）对于目前国际水文界的前沿问题—水文尺度转换提供了一种有效的解决途径。 然而分布式水文模型还不完善，如1)真实性问题。对一些水文过程和边界条件还不确定。2)尺度转换问题。目前很少考虑尺度对参数有效性的影响。3)检验问题。还无法判断对有些难以测量的水文状态变量的模拟正确与否。4)计算时间和数据存储的问题。有些分布式水文模型虽然具有很强的水文物理基础和完善的模型结构，但是计算时间过长和(或)数据存储过大，难以应用。上述问题的核心就是对分布式水文模型的核心—单元水文模型的研究不够，需要为进一步完善单元水文模型进行研究。 本文采用饱和入渗理论、Saint-Venant方程、Richards方程、Penman-Monteith方程等等构建了以有限差分法求解的适用于森林流域的单元水文模型，并通过实验室模拟试验和坡地径流场资料进行了验证，主要结论为： 通过不同坡度和不同雨强下的室内坡面产汇流实验模拟，表明：该模型模拟的坡面流和壤中流过程与实测过程基本一致，峰现时间、径流历时、峰值流量、出流总量模拟值与实测值的相对误差均较小，基本小于10%。模型的模拟精度较高，实用性较强，为深入研究壤中流机制和改进流域降雨-径流模型提供了理论依据。 通过坡地径流观测场实测资料的验证，表明：该模型模拟的坡面流过程精度较高，累计流量的精度更高于小时过程的精度，离差系数、效率系数、确定系数均较理想，具有应用价值，有助于改善分布式水文模型在森林流域的模拟效果。

Study on peak overpressure and flame propagation speed of gas deflagration in the tube with obstacles

The on-way peak overpressure and flame propagation speed of gas deflagration in the tube with obstacles are important data for process safety. Based on carbon monoxide deflagration experiments, the paper presents a multi-zone integration model for calculation of on-way peak overpressure, in which the tube with obstacles is considered as a series of venting explosion enclosures which link each others. The analysis of experimental data indicates that the on-way peak overpressure of gas deflagration can be correlated as an empirical formula with equivalence ratio of carbon monoxide oxidation, expansion ratio, flame path length, etc., and that the on-way peak overpressure exhibits a linear relationship with turbulence factor and flame propagation speed. An empirical formula of flame propagation speed is given.