MULTIPLE PEAK PHOTOLUMINESCENCE OF POROUS SILICON


Autoria(s): CHEAH KW; CHAN T; LEE WL; TENG D; ZHENG WH; WANG QM
Data(s)

1993

Resumo

The photoluminescence (PL) response of porous silicon is usually in the form of a single broad peak. Recently, however, PL response with two peaks has been reported. Here we report the observation of multiple peaks in the PL spectrum of porous silicon. A simple modeling of the line shape indicates that four peaks exist within the response curve, and analysis suggests that the PL of porous silicon is derived from quantum confinement in the silicon crystallites. The line shapes can be due to either minibands within the conduction and valence bands or crystallite size variation or a combination of the two.

Identificador

http://ir.semi.ac.cn/handle/172111/14033

http://www.irgrid.ac.cn/handle/1471x/101051

Idioma(s)

英语

Fonte

CHEAH KW; CHAN T; LEE WL; TENG D; ZHENG WH; WANG QM.MULTIPLE PEAK PHOTOLUMINESCENCE OF POROUS SILICON,APPLIED PHYSICS LETTERS,1993,63(25):3464-3466

Palavras-Chave #光电子学 #OPTICAL-PROPERTIES
Tipo

期刊论文