ac gate-induced Fano resonance and peak splitting of conductance in a quantum dot


Autoria(s): Yang M; Li SS
Data(s)

2004

Resumo

We have investigated the conductance of a quantum dot system suffering an anti-symmetric ac gate voltage which induces the transition between dot levels in the linear regime at zero temperature in the rotating wave approximation. Interesting Fano resonances appear on one side of the displaced resonant tunnelling peaks for the nonresonant case or the peak splitting for the resonant case. The line shape of conductance (vs Fermi energy) near each level of the quantum dot can be decomposed into two profiles: a Breit-Wigner peak and a Fano profile, or a Breit-Wigner peak and a dip in both cases.

Identificador

http://ir.semi.ac.cn/handle/172111/7998

http://www.irgrid.ac.cn/handle/1471x/63593

Idioma(s)

英语

Fonte

Yang, M; Li, SS .ac gate-induced Fano resonance and peak splitting of conductance in a quantum dot ,PHYSICAL REVIEW B,JUL 2004,70 (4):Art.No.045318

Palavras-Chave #半导体物理 #PHOTON SIDE-BAND
Tipo

期刊论文