Stoichiometry in GaAs grown in outer space measured nondestructively

A semi-insulating (SI) GaAs single crystal ingot was successfully grown in a recoverable satellite. The two-dimensional distribution of stoichiometry in space-grown SI-GaAs single crystal wafer was studied nondestructively based upon x-ray Band diffraction. The avenge stoichiometry in the space-grown crystal is 0.50007 with mean square deviation of 6 x 10(-6), and shows a better stoichiametric property than the ground-grown SI-GaAs. The average etch pit density (EPD) of dislocations in the crystal revealed by molten KOH is 2.0 x 10(4) cm(-2), and the highest EPD is 3.1 x 10(4) cm(-2). This result indicates that the structural properly of the crystal is quite good.

Semi-insulating GaAs grown in outer space

A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. The characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in GaAs single crystal was used to analyze the space-grown GaAs single crystal. The distribution of stoichiometry in a GaAs wafer was measured for the first time. The electrical, optical and structural properties of the space-grown GaAs crystal were studied systematically, Device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating GaAs wafers has a close correlation with the crystal's stoichiometry. (C) 2000 Elsevier Science S.A. All rights reserved.

Total-internal-reflection fluorescence microscopy with W-shaped axicon mirrors

A scheme based on a W-shaped axicon mirror device for total-internal-reflection fluorescence microscopy (TIRFM) is presented. This approach combines the advantages of higher efficiency compared with traditional TIRFM, adjustable illumination area, and simple switching between wide-field and TIRF imaging modes. TIRF images obtained with this approach are free of shadow artifacts and of interference fringes. Example micrographs of fluorescently labeled polystyrene beads, of Convallaria majalis tissue, and of Propidium-iodide-labeled Chinese hamster ovary cells are shown, and the capabilities of the scheme are discussed. (C) 2010 Optical Society of America

低速多电荷态离子He~(2+)、O~(2+)和Ne~(2+)与W靶表面相互作用的动能电子发射研究

本文报道了He2+,O2+和Ne2+与W靶表面相互作用中的动能电子产额随离子入射速度变化的实验测量结果.结果表明:在本实验的入射速度范围内,对同一入射离子,动能电子产额随入射离子的速度增大而线性增加.基于动能电子发射的机理,我们分析了影响动能电子产额的因素,理论上得出动能电子产额与入射速度增长呈线性增加的关系,取得了实验上和理论上一致的结果.

~(189)W衰变纲图

用14.8 MeV中子同天然锇反应, 取道192O(n, α) 反应产生189W。通过放射化学分离流程, 从反应产物中分出W。用高纯Ge探测器完成放射性W样品γ射线单谱的测量。在189Re激发能级文献值的基础上并依据衰变和能级的关系以及189W衰变的γ射线能量和相对强度的实验数据, 给出了建议的189W衰变纲图。

~(189)W的衰变

给出了迄今为止实验中测得的新发现的189W的衰变数据——射线能量、半衰期和相对强度等,作为文献值;并将实验结果同文献值进行了比较。丰富了已测得的189W半衰期的文献值

Rotation-driven prolate-to-oblate shape phase transition in W-190: A projected shell model study

A shape phase transition is demonstrated to occur in W-190 by applying the projected shell model, which goes beyond the usual mean-field approximation. Rotation alignment of neutrons in the high-j, i(13/2) orbital drives the yrast sequence of the system, changing suddenly from prolate to oblate shape at angular momentum 10h. We propose observables to test the picture.

Separation of potential and kinetic electron emission from Si and W induced by multiply charged neon and argon ions

T he total secondary electron emission yields, gamma(T), induced by impact of the fast ions Neq+ (q = 2-8) and Arq+ (q = 3-12) on Si and Neq+ (q = 2-8) on W targets have been measured. It was observed that for a given impact energy, gamma(T) increases with the charge of projectile ion. By plotting gamma(T) as a function of the total potential energy of the respective ion, true kinetic and potential electron yields have been obtained. Potential electron yield was proportional to the total potential energy of the projectile ion. However, decrease in potential electron yield with increasing kinetic energy of Neq+ impact on Si and W was observed. This decrease in potential electron yield with kinetic energy of the ion was more pronounced for the projectile ions having higher charge states. Moreover, kinetic electron yield to energy-loss ratio for various ion-target combinations was calculated and results were in good agreement with semi-empirical model for kinetic electron emission.

Excitation and dissociation of tungsten hexacarbonyl W(CO)(6): Statistical and nonstatistical dissociation processes

We have studied the excitation and dissociation processes of the molecule W(CO)(6) in collisions with low kinetic energy (3 keV) protons, monocharged fluorine, and chlorine ions using double charge transfer spectroscopy. By analyzing the kinetic energy loss of the projectile anions, we measured the excitation energy distribution of the produced transient dications W(CO)(6)(2+). By coincidence measurements between the anions and the stable or fragments of W(CO)(6)(2+), we determined the energy distribution for each dissociation channel. Based on the experimental data, the emission of the first CO was tentatively attributed to a nonstatistical direct dissociation process and the emission of the second or more CO ligands was attributed to the statistical dissociation processes. The dissociation energies for the successive breaking of the W-CO bond were estimated using a cascade model. The ratio between charge separation and evaporation (by the loss of CO+ and CO, respectively) channels was estimated to be 6% in the case of Cl+ impact. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3523347]

重离子与~(nat)W相互作用中Hf的生成研究

用放射化学方法研究了6.3、8.5、11.8、14.7、18.4、24.6、40 MeV/nucleon ~(40)Ar + ~(nat)W、10.5 MeV/nucleon ~(84)Kr + ~(nat)W、80 MeV/nucleon ~(16)O + ~(nat)W、135 MeV/nucleon ~(12)C + ~(nat)W反应中的Hf的生成，得到了Hf同位素的激发函数、反冲性质和同位素分布。研究结果指出利用HIRFL能量的重离子和丰中子靶核作用，能以一定的截面生成A > 170区丰中子新核素。重炮弹更有利于丰中子新核素的生成。使用厚靶，可以明显地提高丰中子新核素的产额。过高的入射能量对丰中子新核素的生成无明显贡献，相反却极大地增加了缺中子同位素产额，这对丰中子新核素的分离和鉴别是非常不利的

SFC 200K W高频系统计算机控制的改进探讨

本文是关于对HIRFL SFC 200KW 高频系统实施计算机控制的专题讨论。首先对HIRFL SFC 200KW 高频系统各部分的运行情况进行了详细分析，在此基础上对原有计算机控制系统进行了剖解，并针对原有计算机控制系统存在的缺陷进行了一些改进和实验，使之投入实际运行工作中；然后，对计算机控制系统中普遍采用的电路从理论上进行了讨论，给出了一些有益于工程实践的结论；最后，为了实现对整个SFC 200KW 高频系统的计算机控制，从软、硬件两个方面，提出了对HIRFL SFC 200KW 高频系统进行该造的方案。